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    APT20M18B2VR Search Results

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    APT20M18B2VR Price and Stock

    Microchip Technology Inc APT20M18B2VRG

    MOSFET N-CH 200V 100A T-MAX
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    DigiKey APT20M18B2VRG Tube 30
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    • 100 $21.59
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    Avnet Americas APT20M18B2VRG Tube 26 Weeks 30
    • 1 $21.59
    • 10 $21.59
    • 100 $18.65
    • 1000 $17.53
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    Mouser Electronics APT20M18B2VRG
    • 1 $21.59
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    Newark APT20M18B2VRG Bulk 30
    • 1 $21.59
    • 10 $21.59
    • 100 $18.65
    • 1000 $17.53
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    Microchip Technology Inc APT20M18B2VRG
    • 1 $21.59
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    Onlinecomponents.com APT20M18B2VRG
    • 1 $35.98
    • 10 $25.4
    • 100 $19.48
    • 1000 $18.9
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    TME APT20M18B2VRG 1
    • 1 $31.23
    • 10 $24.84
    • 100 $24.84
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    NAC APT20M18B2VRG Tube 17
    • 1 $20.03
    • 10 $20.03
    • 100 $18.45
    • 1000 $17.1
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    Master Electronics APT20M18B2VRG
    • 1 $35.98
    • 10 $25.4
    • 100 $19.48
    • 1000 $18.9
    • 10000 $18.9
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    APT20M18B2VR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M18B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M18B2VR Microsemi Power MOS V MOSFET Original PDF
    APT20M18B2VRG Microsemi Power MOSFET; Package: T-MAX [B2]; ID (A): 100; RDS(on) (Ohms): 0.018; BVDSS (V): 200; Original PDF

    APT20M18B2VR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT20M18B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT20M18B2VR APT20M18LVR O-264 O-264 APT20M18 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT20M18B2VR A20M18LVR O-264 O-264 APT20M18B2VR O-247

    A20M18LVR

    Abstract: APT20M18B2VR
    Text: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT20M18B2VR A20M18LVR O-264 O-264 APT20M18B2VR O-247 A20M18LVR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original
    PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original
    PDF