AS 205 TRANSISTOR Search Results

HC4538

Abstract: HD74HC4538 BA rx transistor Hitachi DSA00223
Contextual Info: HD74HC4538 Dual Precision Retriggerable/Resettable Monostable Multivibrators ADE-205-543 Z 1st. Edition Sep. 2000 Description Each multivibrator features both a negative, A, and a positive, B, transition triggered input, either of which can be used as an inhibit input. Also included is a clear input that when taken low resets the one short. The

Contextual Info: HA R R I S S E M I C O N D SE C T O R HARRIS SÔE D • 4 3 G 2271 D Ü 4 5 bflO 205 H H A S 2N7273D, 2N7273H 2N7273H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS130 D, R, H Radiation Hardened N-Channel Power MOSFETs January 1993

transistor bc 237c

Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers

S14K275

Abstract: S20K680 S20K300 S10K250 S14K300 S14K385 S14K550 S20K550 710 svp 180 16 S20k175
Contextual Info: 1954-2012:QuarkCatalogTempNew 9/11/12 8:50 AM Page 1954 OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Varistors and Surge Voltage Protectors Metal Oxide Varistors Typical Protection Applications: ᭤ Protection of Semiconductors Diodes, Transistors, Thyristors, ICs, Etc.

SIEMENS 1035

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD BUZ 205 = 400 V = 6.0 A ^D SIonl = 1 - 0 Q • N channel • FREDFET • Enhancement mode • Avalanche-proof • Package: TO -220A B ’ Type Ordering code BUZ 205 C67078-A1401-A2 Maximum Ratings Parameter Drain-source voltage

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancem ent mode FREDFET Type ^DS BUZ 205 400 V ^DS on 6.0 A 1.0 ß Maxim um Ratings Parameter Continuous drain current, Tc = 35 "C Pulsed drain current, Tc = 25 ”C Drain-source voltage Drain-gate voltage, R GS = 20 kQ

7N60B equivalent

Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain

Dual transistor TD-100

Contextual Info: Philips Semiconductors Product specification Dual N-channel enhancement mode MOS transistor FEATURES PHN205 PINNING - SOT96-1 S08 • High-speed switching • No secondary breakdown • Very low on-state resistance. PIN SYMBOL 1 Si 2 9i gate 1 3 s2 source 2

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

AZ10EL89

Abstract: AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL89 ECL/PECL Coaxial Cable Driver FEATURES • • • • • • 375ps Propagation Delay 1.6V Output Swing Internal Input Pulldown Resistors Operating Range of 4.2V to 5.7V Direct Replacement for ON Semiconductor MC10EL89 Transistor Count = 29 devices

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

TPV-3100

Abstract: TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100
Contextual Info: ADVANCED SEMICONDUCTOR, IN C TRANSISTORS FOR BROADCAST APPLICATIONS Vour Single Source for Transistors 7525 ETHEL AVE. * NORTH HOLLYWOOD, CAUFORNIA 91605 • U.S.A. TEL: 8 18 982-1200 ♦ (800) 423-2354 * FAX: (818) 765-3018 * e-mail: asiusa@asi.ccmail.compuserve.com

BFR65

Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
Contextual Info: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.

Contextual Info: DIONICS INC. 65 RU SH M O RE ST. W ES TBU RY, N Y 11S90 DTN203 - DTP203 5 1 6 *9 9 7 *7 4 7 4 DTN204 - DTP204 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN205 - DTP205 DTN206 - DTP206 A P P LIC A TIO N S : PLA SM A A N D GAS D IS C H A R G E . D IS P L A Y D R IV E R S • S W IT C H IN G R E G U L A T O R S

2N6764 JANTX

Abstract: 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770
Contextual Info: 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor

transformerless variable frequency drive

Abstract: SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B
Contextual Info: SM8141 EL Driver OVERVIEW The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires few external components, making it ideal for compact driver units in portable equipment.

transformerless variable frequency drive

Abstract: LDR DIMENSIONS LDR resistor ldr block diagram LDR voltage range ldr 05 CF8141A CF8141B SM8141A SM8141B
Contextual Info: SM8141 EL Sheet Driver NIPPON PRECISION CIRCUITS INC. OVERVIEW PINOUT The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires

2SB1398

Contextual Info: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.

2SB1398

Contextual Info: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping.

2SB1398

Contextual Info: Transistors 2SB1398 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing supply with the radial taping

2SB1398

Contextual Info: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.

IC 7474

Abstract: 7474 ic 7474 ic specifications complementary npn-pnp power transistors 7474 ic chip DTN206 of 7474 ic Data Display 7474 complementary npn-pnp DTP206
Contextual Info: DIONICS INC. 65 RU SH M O RE ST., W ES TB U R Y . N Y. 11590 5 1 6 *9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN203 DTP 203 DTN204 DTP204 DTN205 - DTP205 DTN206 - DTP206 PLASM A AND G A S D ISC H A R G E D IS P L A Y D R IV E R S • SW IT C H IN G R E G U L A T O R S

EPC Gan transistor

Abstract: EPC1013
Contextual Info: DATASHEET EPC1013 EPC1013 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC1012

Abstract: EPC Gan transistor
Contextual Info: DATASHEET EPC1012 EPC1012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure