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    AS 205 TRANSISTOR Search Results

    AS 205 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    AS 205 TRANSISTOR Price and Stock

    onsemi BC847BLT3G

    Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC847BLT3G 60,000
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    • 10000 $0.0117
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    Microchip Technology Inc VN0109N3-G

    MOSFET - N-Channel - 90V Vdss - 350mA - 3Ohm @ 1A, 10V Rds On (Max) @ Id, Vgs - ±20V Vgs - 1W Power Dissipation - TO-92-3 - RoHS.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com VN0109N3-G 205
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    • 1000 $0.666
    • 10000 $0.64
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    Microchip Technology Inc JANTXV2N2906A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTXV2N2906A
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    • 1000 $6.32
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    onsemi FDP030N06B-F102

    Single N-Channel 60 V 3.1 mOhm 99 nC 205 W Flange Mount Mosfet - TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FDP030N06B-F102
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    AS 205 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HC4538

    Abstract: HD74HC4538 BA rx transistor Hitachi DSA00223
    Text: HD74HC4538 Dual Precision Retriggerable/Resettable Monostable Multivibrators ADE-205-543 Z 1st. Edition Sep. 2000 Description Each multivibrator features both a negative, A, and a positive, B, transition triggered input, either of which can be used as an inhibit input. Also included is a clear input that when taken low resets the one short. The


    Original     		PDF HD74HC4538 ADE-205-543 HD74HC4538 HC4538 BA rx transistor Hitachi DSA00223

    S14K275

    Abstract: S20K680 S20K300 S10K250 S14K300 S14K385 S14K550 S20K550 710 svp 180 16 S20k175
    Text: 1954-2012:QuarkCatalogTempNew 9/11/12 8:50 AM Page 1954 OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Varistors and Surge Voltage Protectors Metal Oxide Varistors Typical Protection Applications: ᭤ Protection of Semiconductors Diodes, Transistors, Thyristors, ICs, Etc.


    Original     		PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    AZ10EL89

    Abstract: AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89
    Text: ARIZONA MICROTEK, INC. AZ10EL89 ECL/PECL Coaxial Cable Driver FEATURES • • • • • • 375ps Propagation Delay 1.6V Output Swing Internal Input Pulldown Resistors Operating Range of 4.2V to 5.7V Direct Replacement for ON Semiconductor MC10EL89 Transistor Count = 29 devices


    Original     		PDF AZ10EL89 375ps MC10EL89 AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 AZM10EL89 AZ10EL89 AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89

    JANTX2N6796

    Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
    Text: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor


    Original     		PDF 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798

    2N6764 JANTX

    Abstract: 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770
    Text: 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor


    Original     		PDF 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, 2N6764 JANTX 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770

    transformerless variable frequency drive

    Abstract: SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B
    Text: SM8141 EL Driver OVERVIEW The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires few external components, making it ideal for compact driver units in portable equipment.


    Original     		PDF SM8141 SM8141 50cm2 SM8141A) SM8141B) 200Vp-p 250Hz NC9710FE transformerless variable frequency drive SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B

    transformerless variable frequency drive

    Abstract: LDR DIMENSIONS LDR resistor ldr block diagram LDR voltage range ldr 05 CF8141A CF8141B SM8141A SM8141B
    Text: SM8141 EL Sheet Driver NIPPON PRECISION CIRCUITS INC. OVERVIEW PINOUT The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires


    Original     		PDF SM8141 SM8141 50cm2 CF8141A CF8141B SM8141BVroducts NC9710DE transformerless variable frequency drive LDR DIMENSIONS LDR resistor ldr block diagram LDR voltage range ldr 05 CF8141A CF8141B SM8141A SM8141B

    2SB1398

    Abstract: No abstract text available
    Text: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.


    Original     		PDF 2SB1398 2SB1398

    2SB1398

    Abstract: No abstract text available
    Text: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping.


    Original     		PDF 2SB1398 2SB1398

    2SB1398

    Abstract: No abstract text available
    Text: Transistors 2SB1398 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing supply with the radial taping


    Original     		PDF 2SB1398 2SB1398

    2SB1398

    Abstract: No abstract text available
    Text: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.


    Original     		PDF 2SB1398 2SB1398

    EPC Gan transistor

    Abstract: EPC1013
    Text: DATASHEET EPC1013 EPC1013 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC1013 EPC Gan transistor EPC1013

    EPC1012

    Abstract: EPC Gan transistor
    Text: DATASHEET EPC1012 EPC1012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC1012 EPC1012 EPC Gan transistor

    transistor bc 237c

    Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
    Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers


    OCR Scan     		PDF IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206

    SIEMENS 1035

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS lD BUZ 205 = 400 V = 6.0 A ^D SIonl = 1 - 0 Q • N channel • FREDFET • Enhancement mode • Avalanche-proof • Package: TO -220A B ’ Type Ordering code BUZ 205 C67078-A1401-A2 Maximum Ratings Parameter Drain-source voltage


    OCR Scan     		PDF -220A C67078-A1401-A2 SIL00032 SIL00753 SIEMENS 1035

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancem ent mode FREDFET Type ^DS BUZ 205 400 V ^DS on 6.0 A 1.0 ß Maxim um Ratings Parameter Continuous drain current, Tc = 35 "C Pulsed drain current, Tc = 25 ”C Drain-source voltage Drain-gate voltage, R GS = 20 kQ


    OCR Scan     		PDF C67078-A14 01-A2 S1L02486

    Dual transistor TD-100

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Dual N-channel enhancement mode MOS transistor FEATURES PHN205 PINNING - SOT96-1 S08 • High-speed switching • No secondary breakdown • Very low on-state resistance. PIN SYMBOL 1 Si 2 9i gate 1 3 s2 source 2


    OCR Scan     		PDF OT96-1 PHN205 Dual transistor TD-100

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    TPV-3100

    Abstract: TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100
    Text: ADVANCED SEMICONDUCTOR, IN C TRANSISTORS FOR BROADCAST APPLICATIONS Vour Single Source for Transistors 7525 ETHEL AVE. * NORTH HOLLYWOOD, CAUFORNIA 91605 • U.S.A. TEL: 8 18 982-1200 ♦ (800) 423-2354 * FAX: (818) 765-3018 * e-mail: asiusa@asi.ccmail.compuserve.com


    OCR Scan     		PDF TVV014A TPV-3100 TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100

    BFR65

    Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
    Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.


    OCR Scan     		PDF BFQ34 btS3T31 BFR65 BFR65 multi-emitter transistor n 431 transistor Transistor PJ 431

    Untitled

    Abstract: No abstract text available
    Text: DIONICS INC. 65 RU SH M O RE ST. W ES TBU RY, N Y 11S90 DTN203 - DTP203 5 1 6 *9 9 7 *7 4 7 4 DTN204 - DTP204 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN205 - DTP205 DTN206 - DTP206 A P P LIC A TIO N S : PLA SM A A N D GAS D IS C H A R G E . D IS P L A Y D R IV E R S • S W IT C H IN G R E G U L A T O R S


    OCR Scan     		PDF 11S90 DTN203 DTP203 DTN204 DTP204 DTN205 DTP205 DTN206 DTP206 300/iS

    IC 7474

    Abstract: 7474 ic 7474 ic specifications complementary npn-pnp power transistors 7474 ic chip DTN206 of 7474 ic Data Display 7474 complementary npn-pnp DTP206
    Text: DIONICS INC. 65 RU SH M O RE ST., W ES TB U R Y . N Y. 11590 5 1 6 *9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN203 DTP 203 DTN204 DTP204 DTN205 - DTP205 DTN206 - DTP206 PLASM A AND G A S D ISC H A R G E D IS P L A Y D R IV E R S • SW IT C H IN G R E G U L A T O R S


    OCR Scan     		PDF t1590 DTN203 DTN204 DTP204 DTN205 DTP205 DTN206 DTP206 O-106 100MHZ IC 7474 7474 ic 7474 ic specifications complementary npn-pnp power transistors 7474 ic chip of 7474 ic Data Display 7474 complementary npn-pnp DTP206