AS DC HFE NV Search Results

2SC4685

Contextual Info: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800~320u (Vc e = 2V> Ic = 0-5A) •• • • H i (z j — nv/n« '> >."•“ “ •/ v *

diode pj 77

Contextual Info: T O SH IB A TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T• nV f i 7 7a f t f i mAm F■ N ■« 8ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62786AFN is eight Channel Non-Inverting Source

Contextual Info: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C typical High gain bandwidth product: 200 MHz

Contextual Info: TOSHIBA 2SC5459 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE 2SC5459 Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS HIGH VOLTAGE SW ITCH IN G APPLICATIO NS 1 0 ± 0 .3 • • • ^ 3 . 2 i0 . 2 2.7± m DC-DC CO NVERTER APPLICATIO NS High Speed Switching : tf = 0.3 /us (Max. (Ig = 1.2 A)

kt 784

Abstract: MAT02 mat04 "direct replacement" multifunction converter transdiode power supply LM194 Precision Monolithics OP07 MAT02EH op32
Contextual Info: BACK a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀

kt 784

Abstract: antilog amplifier "logarithmic amplifier" LM194 MAT02FH op07 ic metal package datasheet sy-15 8c 617 transistor I2 200-5 MAT02
Contextual Info: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀

2SC5201

Contextual Info: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • Unit in mm High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A

2SD2Q12

Contextual Info: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\

2SC5201

Contextual Info: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A

Contextual Info: Audio, Dual-Matched NPN Transistor MAT12 Data Sheet PIN CONFIGURATION Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C typical

multifunction converter

Abstract: mat02
Contextual Info: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀

LM194 NPN Monolithic Transistor Pair

Abstract: LM194 MAT02 MAT02FH NPN Monolithic Transistor Pair antilog amplifier I2 200-5 mat04 "direct replacement" op07 ic metal package datasheet Precision Monolithics
Contextual Info: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀

KT 185

Abstract: MAT02 MAT02F MAT02FH MAT04 OP07 OP15 AMP01 MAT02E MAT02EH
Contextual Info: a FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394

Contextual Info: Low Noise, Matched Dual Monolithic Transistor MAT02 a PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀

AD8512

Abstract: AMP02 MAT12 NPN MATCHED PAIRS 1N914 MAT02 MAT-12 Package TO-78
Contextual Info: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

2SA1316

Contextual Info: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)

2sc3329

Abstract: 2SA1316
Contextual Info: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)

2SA1316

Abstract: 2sa131 2SC3329 2SC332
Contextual Info: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)

2SC3329

Contextual Info: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)

2SA1316

Contextual Info: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)

ssm2212

Abstract: QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers
Contextual Info: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz

Contextual Info: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction • Current Sources y Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors

multiplier log-antilog

Contextual Info: ANALOG DEVICES Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 |xV max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/VHz max High Gain hFE : 500 min at lc = 1 mA 300 min at lc = 1 fiA Excellent Log Conformance: rBE - 0.3 i l

soc2907

Abstract: 2N2907AUB
Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.