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    ATC100B3R3BT500XT Price and Stock

    Kyocera AVX Components 100B3R3BT500XT

    Silicon RF Capacitors / Thin Film 500volts 3.3pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B3R3BT500XT 3,542
    • 1 $5.29
    • 10 $4.56
    • 100 $3.99
    • 1000 $3.39
    • 10000 $3.39
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    TTI 100B3R3BT500XT Reel 500
    • 1 -
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    • 100 -
    • 1000 $3.36
    • 10000 $3.36
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    American Technical Ceramics Corp ATC100B3R3BT500XT

    CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000033 UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B3R3BT500XT 326
    • 1 $3.75
    • 10 $3.75
    • 100 $2.5
    • 1000 $2.3125
    • 10000 $2.3125
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    ATC100B3R3BT500XT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j241

    Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960


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    PDF MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202NR3

    MRF8S9232N

    Abstract: ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333
    Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9232N MRF8S9232NR3 MRF8S9232N ATC100B1R5BT500XT ATC100B3R3BT500XT c5750x7r1h106k MPZ2012S300AT 82c230 ATC100B2R0BT500XT ATC100B620 AN1955 transistor J333

    232273461009L

    Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9202N MRF8S9202NR3 232273461009L transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955

    ATC100B4R7CT500XT

    Abstract: J376
    Text: Document Number: MRF8S9232N Rev. 0, 10/2011 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9232NR3 Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9232N MRF8S9232NR3 ATC100B4R7CT500XT J376

    CRCW120610R0JNEA

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9120N MRF8S9120NR3 CRCW120610R0JNEA

    OM-780-2

    Abstract: transistors BC 457 om780-2 mrf8s9202g
    Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960


    Original
    PDF MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202N OM-780-2 transistors BC 457 om780-2 mrf8s9202g