ATC600F330B Search Results

ATC600F330B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPT25100 Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power	Original	NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR	PDF
PIMD3 Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3	PDF
PIMD3 Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power	Original	NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3	PDF
NPT25100 Abstract: PIMD3 Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power	Original	NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3	PDF
NPT25015 Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT Contextual Info: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP	Original	NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT	PDF
Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP	Original	NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004	PDF
NPT25015DT Abstract: NPT25015DR Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP	Original	NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR	PDF
AD-009 Abstract: ad009 NPTB00004 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603 Contextual Info: AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM WiMAX modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM	Original	AD-009 AD-009: NPTB00004 AD-009 29dBm 150mA. 150ma ad009 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603	PDF
nptb00004 Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100 Contextual Info: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100	PDF
PIMD3 Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3	PDF