AVALANCHE 850 NM Search Results

SAT800X

Abstract: SAT3000 SAT3000x TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000
Contextual Info: Silicon Avalanche Photodiode SAT-Series DESCRIPTION The SAT-Series is based on a “reach-through” structure for excellent quantum efficiency, high speed and targeted for the 1060 nm detection region. The chip is hermetically sealed in a modified TO-8 / TO-5

NDL1202

Abstract: fiber optical photo detector Avalanche Photo Diode
Contextual Info: PHC’TO DIODE /* NDL1202 •>* OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.

nec NDL1202

Contextual Info: DATA SHEET NEC PHOTO DIODE NDL1202 aECTOON DEVICE OPTICAL FIBER COM MUNICATION SILICO N AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.

l1202

Abstract: nec A 1383
Contextual Info: DATA SHEET NEC PHOTO DIODE N D L1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as

C30902SH-DTC

Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Contextual Info: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the

SARF500

Abstract: SARF230
Contextual Info: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain

. LIDAR

Abstract: SARF500
Contextual Info: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain

Contextual Info: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through‘‘ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain

Contextual Info: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain

05p47

Abstract: 5SDA05p
Contextual Info: Avalanche Rectifier Diodes ABB Semiconductors AG I - Optimiert für Anwendungen mit Netzfrequenz. - Niedrige Durchlaßspannung, enge Durchlaß-Spannungsbereiche für Parallelschaltung. - Selbstschutz gegen transienten Überspannungen. - Garantierte maximale Verlustleistung

SARF500

Contextual Info: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through‘‘ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain

Contextual Info: DATASHEET Photon Detection C30645 and C30662 Series Large Area InGaAs Avalanche Photodiodes Key Features •      Spectral response 1100 - 1700 nm High responsivity Low dark current and noise Large area RoHS-compliant Available with lead-solder

InGaAs apd photodiode

Abstract: UDT Sensors Photodiode laser detector BPX-65
Contextual Info: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can

51414G

Abstract: 00534H siemens SFH nm 00535H
Contextual Info: Semiconductor Devices for FiberOptic Systems and High-Power Lasers Bauelemente für die LWL-Technik und Leistungslaser Detektoren für Glasfaseranwendungen Detectors for glass fiber applications S ilizium -PIN -Fotodioden Silicon PIN photodiodes fü r d a s 1. D u rc h la ß fe n s te r 800 - 9 0 0 nm

SFH2324

Abstract: SFH551V photodiode ge ma 850 SFH4646 sfh4845 850 nm photodiode pigtail SFH2310 SFH4423 Laser diode LAR
Contextual Info: Fiber Optic Emitters Part No. Package Outline SFH450 SFH750 Infrared/ Vielble Color Package Type T13/* light gray plastic T l3/4 red plastic Oh 10 mA NW Infrared 950 GaAs 90 Visible (Red) 660 GaAs 9 665 80 950. GaAs 90 (Hyper-Red) SFH752 Maximum Wave­ length

5SDA

Abstract: mml 600 71B0200 avalanche 850 nm 5SDA07D
Contextual Info: Rectifier Diodes ¡conductors AGI - O ptim ized for line frequency rectifiers. - Low on-state voltage, narrow V F-bands for parallel operation. - Self-protected against transient over­ voltages. - G uaranteed m axim um avalanche pow er dissipation. — O ptim iert für Anw endungen mit

Contextual Info: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the

ABB Semiconductors 5ssb

Abstract: 30X1700 abb traction motor 30X0900 thyristor ABB 5SSB30X0900 23X1200 30X0800 5SSB50X0500 5SSB30X1600
Contextual Info: Silicon Surge Voltage Suppressor 5SSB .X Series Doc. No. 5SYA 1031-01 Nov.95 Features The 5SSB silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSB silicon surge voltage suppressors are best suited to protect power thyristors against small

100EE

Abstract: photodiodes MIL temperature range
Contextual Info: Texas TIED 57/TIED 58 Silicon Avalanche Photodiode opcoe/e«ron,cs, ,n c. DESCRIPTION FEATURES • • • • • The TIED 57 and TIED 58 are high speed photodiodes with 10 mil or 30 mil active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications

RE52

Contextual Info: T- V/ S 3 TEXAS OPTOELECTRONICS INC lOE » | ÖTbBTBM DDDOiaa 0 | WO# Texas Optoelectronics, Inc. - TIED 57/TIED 58 Silicon Avalanche Photodiode FEATURES DESCRIPTION Photocurrent gain > 600 Low noise 2 x 10- 13 W \/H z TO-18 construction Isolated case C o m p atib le with T IE F 150-152 tran s­

LD 33 regulator

Abstract: flyback transformer design for mosFET flyback equivalent N and P MOSFET
Contextual Info: OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6525 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in a constant OFF-time mode. The device incorporates the

Contextual Info: Texas Optoelectronics, Inc. DESCRIPTION TIED 57/TIED 58 Silicon Avalanche Photodiode FEATURES The T IE D 57 and T IE D 58 are high speed photodiodes with 10 mil or 30 mih active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications

str 5707

Abstract: datasheet str 5707 STR 6707 SMPS CIRCUIT str 6707 STR S 6709 CIRCUIT str 6709 str 6707 diagram guide datasheet str 6707 str 6708 str 5708
Contextual Info: STR-S6525 INTERIM DATA SHEET STR-S6525 August 18, 1994 Data Sheet 28102.11 OFF-LINE SWITCHING REGULATOR Subject to change without notice OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT The STR-S6525 is specifically designed to meet the requirement