B 647 TRANSISTOR Search Results

IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

Contextual Info: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MAX2XX

Abstract: BD645 BD646 BD648 BD649 BD650 BD651 BD652 sb 649 a 2 sb 647
Contextual Info: BD645; 647 BD649; 651 SILICON DARLINGTON POWER TRANSISTORS N-P-N e p ita x ia l base tran sistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g a p p lica tio n s; T 0 -2 2 0 plastic envelope. P-N-P co m p le m en ts are B D 646, B D 648,

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

IC 651

Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Contextual Info: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a

BD645

Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
Contextual Info: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.

transistor bd650

Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
Contextual Info: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.

BD651

Contextual Info: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching

B0645

Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851
Contextual Info: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

lg bd645

Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
Contextual Info: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

Wakefield

Abstract: THERMAL LINKS TO TO-5
Contextual Info: A e G c G W A KEFIELD ENGINEERING ^ P A m n A n a n te H iu ie iA n Components Division ^ 35 - m 60 Audubon Road, W akefield, MA 01880 Tel. 617 245-5900 TWX 710-348-6713 259 SERIES Series 259 Equalizing Links provide thermal connection but electrical separation for

b 647 transistor

Abstract: transistor b 647 c transistor M 839
Contextual Info: Central CXTA27 Semiconductor Corp. SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

Contextual Info: 3 H A R R IS fCL644/645/646/647 ICL7644/7645/7646/7647 The ICL644, ICL645 and ICL646 are low power fixed +5V output step-up DC-DC converters designed for operation from very low input voltages. All control functions and a power FET are contained in the ICL644, ICL645 and

Contextual Info: STANLEY ELECTRIC CO LTD 5SE D • 4b7fll5ß QQ0201Ö 57b B I I S T ínlei -r¿+t- c2> PHOTODARLINGTON TRANSISTOR PD302 Package Dimensions ■ FEATURES • • • HIGH SENSITIVITY (lc = 12mW TYP. HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION • •

bft93

Abstract: marking x1 B 647 AC transistor
Contextual Info: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

PVAPOX

Contextual Info: S C S -T H O M S O N IIL IM « ! » BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 95 x 95 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

PD302

Abstract: Stanley Electric
Contextual Info: STANLEY ELECTRIC CO LTD 55E D • 4b7fil5û SjÄKLEI GDD2Ü1Ô 57b M U S T 7 ^ -& 3 PHOTODARLINGTON TRANSISTOR_ PD302 Package Dimensions ■ FEATURES • • • HIGH SENSITIVITY lc = 12mW TYP. HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION

1N5810 diode

Contextual Info: J2 HARRIS IC L 6 4 4 /6 4 5 /6 4 6 /6 4 7 ICL7644/7645/7646/7647 Features D escription • +5V @ 40mA from a Single Cell Battery. Note: Output Current can be Increased by Changing L2 See Table 1 The ICL644, ICL645 and ICL646 are low power fixed +5V output step-up DC-D C converters designed for operation