BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
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b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
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BC 939 Transistor Data
Abstract: MJ4647 MJ4646
Text: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli
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b3b75S4
MJ4646
MI4647
BC 939 Transistor Data
MJ4647
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21134 transistor
Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Text: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to
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b3b7254
244C-01,
21134 transistor
RF1029
21134
case 244c-01
21134 npn
RF NPN POWER TRANSISTOR 3 GHZ 5w
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MM2896
Abstract: To206AF bo140
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications
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b3b75S4
MM2896
MIL-S-19500/xxx
O-116)
MM2896
To206AF
bo140
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2204B
Abstract: 1 WATT carbon RESISTOR MRF433 vk200 1N4001 vk200 rf choke K1004
Text: MOTOROLA SC XSTRS/R F 4bE D b3b75S4 OCHMbbS b MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 12.5 W (PEP)- 3 0 MHz S IL IC O N R F POW ER T R A N S IS T O R S RF POWER TRANSISTOR . . . designed prim arily for application as com plem entary sym m etry
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b3b75S4
Mil-Std-1311
2204B,
1N4001
VK200
20/4B
2204B
1 WATT carbon RESISTOR
MRF433
vk200 rf choke
K1004
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2bE D • b3b75S4 00^0533 MOTOROLA SEMICONDUCTOR a » " " « ™ ™ " " » " Ö ■ "T-V7 - ( S TECHNICAL DATA PRELIMINARY DATA DM0 mini MRH660PHXV, MRH660PHS PR O C ESSED TO MIL-S-19500 RADIATION TOLERANT TRANSISTOR Discrete Military
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b3b75S4
MRH660PHXV,
MRH660PHS
MIL-S-19500
10mAdc
10mAdc,
MRH630PHXV
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CA2850
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | b3b75S4 0000543 1 | *F7i4-Ocl- MOTOROLA SEMICONDUCTOR TECHNICAL DATA CA2850R CA235QRH CA2851R The RF Line W id e b a n d L in e a r A m p lifie rs . . . d e s ig n e d fo r a m p lifie r a p p lic a tio n s in 50 to 100 oh m sy s te m s re q u irin g w id e
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b3b75S4
CA2850R
CA235QRH
CA2851R
-32dB
CA2850
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2N4406
Abstract: transistor c 3206 2N4407
Text: M O T O R O L A SC XSTRS/R F 12E D I b3b75S4 GQflbMl? fl | T- 31-/7 2N4406 2N4407 M A X I M U M R A T IN G S Symbol Value Unît Collector-Emitter Voltage VcEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc 'Collector Current — Continuous*
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b3b75S4
2N4406
2N4407
O-205AD)
500/iS
1N916
transistor c 3206
2N4407
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Untitled
Abstract: No abstract text available
Text: ÎF|b3b75S4 MOTOROLA SC ÎXSTRS/R F> r 6367254 MOTOROLA SC XSTRS/.R 96D F . 81951, _ M A X I M U M R A T IN G S Value U n it VcEO 32 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage Ve b o 5.0 Vdc 'c 800 m Adc S ym bol M ax U n it Pd 225 mW 1.8
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b3b75S4
BCW65A
OT-23
O-236AA/AB)
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sot23 transistor marking y2
Abstract: 2N3905 MOTOROLA ts 3110 TRANSISTOR T29 marking X062 MMBT3906-2A 25CC 2N3905 2N4123 2N4401
Text: MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA SC Tb !>F|b3b75S4 G O ñ E D m <X S T R S ¿ R „ F ? 9 6D 8 2 0 4 1 T'Z^'/S MAXIMUM RATINGS Rating Sym bol Value U nit Coilector-Em itter Voltage VCEO 40 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage
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2N6370
Abstract: MRF-410A RF410A mrf410 vk200.10 MRF410A
Text: 12E D I b3b75S4 GGa7Ì.57 5 | MO TOROLA SC MOTOROLA XSTRS /R F T - 33 S E M IC O N D U C T O R TECHNICAL DATA M RF410 M RF410A The RF Line N P N S ilic o n RF P o w e r T ra n sisto rs 10 W -30 MHz RF POWER TRANSISTORS NPN SILICON . designed for high gain driver and output linear amplifier stages in 1.5 to 30 M Hz
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b3b75S4
RF410
RF410A
2N6370
MRF410,
MRF410A
2N6370
MRF-410A
RF410A
mrf410
vk200.10
MRF410A
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MM4037
Abstract: MM4036 lg 14 ccb
Text: M OTOROLA SC XSTRS/R F 1EE D | b3b75S4 OGflbSTa 4 | T -$ *7 -¡*-¡ M A X IM U M R A T IN G S Rating SymboL Coliector-Emitter Voltage MM4036 MM4037 Collector-Base Voltage MM4036 MM4037 VCEO VCBO Emitter-Base Voltage Value Unit Vdc 65 40 Vdc 90 60 VE8 0 5.0
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MM4036
MM4037
b3b75S4
MM4036,
lg 14 ccb
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BSV16
Abstract: BSV17-10 LTNV 2N4405 BSV15-16 BAY63 BSV15 BSV15-10 BSV17 BSv15 MOTOROLA
Text: MO TO RO LA SC XSTR S/R F 1EE D I b3b75S4 QOfibMi? T r- 3 3-¿>r I BSV15-10, 46 thru MAXIMUM RATINGS Sym bol Coltector-Emitter Voltage VCEO Collector-Emitter Voltage VCES BSV 15 40 40 Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
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b3b75S4
BSV15-10,
15nsec
BAY63
BSV16
BSV17-10
LTNV
2N4405
BSV15-16
BAY63
BSV15
BSV15-10
BSV17
BSv15 MOTOROLA
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MFQ6660C
Abstract: MFQ6660P
Text: MOTOROLA SC XSTRS/R F 1ZE 0 I b3b75S4 QUAD DUAL-IN-LINE N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS FIELD EFFECT TRANSISTORS □Qfit. 75c? 3 I T Æ -2 5 MFQ6660C; P These TMOS Power FETs are designed fo r high current, high speed power switching applications such as switching power supplies, CMOS logic,
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b3b75S4
b3b72SM
MFQ6660C,
MFQ6660C
MFQ6660P
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .
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BUD44D2
St254
MTP8P10
500nH
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2n2501
Abstract: 2N2501 MOTOROLA Rbl 69
Text: MOTOROLA SC XSTRS/R F 15E I b3b7354 GGflt,2bD 1 I r-3r-/3 M A X I M U M R A T IN G S Symbol Value Unit Coliector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage Vc b o 40 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc Total Device Dissipation @ T>\ = 26°C Derate above 25°C
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b3b7354
2N2501
2n2501
2N2501 MOTOROLA
Rbl 69
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2N5109 motorola
Abstract: transistor 2N5109 c0851 2n5109
Text: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good
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2N5109
abo2-46
2N5109 motorola
transistor 2N5109
c0851
2n5109
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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MTP50N05
Abstract: l0134 CU904 CASE221D-02
Text: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate
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MTA30N05EUD
MTA30N05EL
CU904
MTP50N05
l0134
CU904
CASE221D-02
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2955E
Abstract: MTA2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM
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T0-220
O-220
b3b7254
2955E
b3b7554
MTA2955E
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H16S
Abstract: je210
Text: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS
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MJ8502
MJ8503
J8503
H16S
je210
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NS 8002 1151
Abstract: TO-66 CASE
Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications
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MIL-S-19500/379
O-116)
NS 8002 1151
TO-66 CASE
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MD918AB
Abstract: No abstract text available
Text: MOTGRCLA SC 12E D I b3t,72SM DQ0tS13 XSTRS/R F MD918A MD918B M A X I M U M R A T IN G S Sym bol Value Unft Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCES 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Collector Current — Continuous 'c 50 mAdc
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DQ0tS13
D918AB
MD918AF
MD918A
MD918AB
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of 76952
Abstract: 76952 MRF transistor mrf 304 M/76952
Text: motorola sc ÛT -c x s t r s / r f > 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F »F|ti3t.7aS4 QD7fiTSB 1 89D 76952 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M RF392 The RF Line N P N S ilic o n P u sh -P u ll RF P o w e r T ra n sisto r . designed primarily for wideband large-signal output and driver amplifier stages
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RF392
44A-01
of 76952
76952
MRF transistor mrf 304
M/76952
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