Untitled
Abstract: No abstract text available
Text: MM4037 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MM4037
Freq60M
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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2N4858 TEXAS
Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
2N4858 TEXAS
2N4872
SIEMENS 5SN
2N4433
Qualidyne
2N4418
transtek
40391 RCA
2N4417
api 560
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SIEMENS 5SN
Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
SIEMENS 5SN
2N3406
UNITRODE DIODE 240
39 sot-89
2n3400
2N3483
2N3436 motorola
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
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MJE8502A
O-220AB/TO-220:
MJF16010A
O-254
MJF16018
MJF16206
MTH13N50
MTM565
MRF531
MM3220
MM1758
MM3904
MM3004
mth5n100
MTM26N40E
MTH7N50
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8CP69
Abstract: 8C304 2s81132 TO226AA 202-AA sk3262 2S8528 2S8549 SIEMENS 5SN 2SA885
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
8CP69
8C304
2s81132
TO226AA
202-AA
sk3262
SIEMENS 5SN
2SA885
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MM4037
Abstract: MM4036 lg 14 ccb
Text: M OTOROLA SC XSTRS/R F 1EE D | b3b75S4 OGflbSTa 4 | T -$ *7 -¡*-¡ M A X IM U M R A T IN G S Rating SymboL Coliector-Emitter Voltage MM4036 MM4037 Collector-Base Voltage MM4036 MM4037 VCEO VCBO Emitter-Base Voltage Value Unit Vdc 65 40 Vdc 90 60 VE8 0 5.0
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MM4036
MM4037
b3b75S4
MM4036,
lg 14 ccb
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TIC COL 02
Abstract: MM4037 TC-512 FYJA
Text: MM4037 SILICON PNP S IL IC O N T R A N S IS T O R PNP S IL IC O N A N N U L A R A M P L IF IE R T R A N S IS T O R . . . designed for use in general-purpose am plifier and sw itching applications. C olle ctor-Em itte r B re a kd o w n V o ltage — B V c E O = 4 0 V d c (M in ) @ I q = 1 0 m A d c
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MM4037
10mAdc
TIC COL 02
MM4037
TC-512 FYJA
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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Untitled
Abstract: No abstract text available
Text: o o o o o in oo oo o o V- CM 1 1 1 1 1 o o m o o in in cm in in C O r- r in in in o o co co co in r- COCOCOCMO t- r*. I i i i i i 1 1 1 1 ! o o o o o in in in in in o o o O 1 m in in o 1 C/D CO . OO 'S" a a UJ LH I I I I I o o o o I in o in o I 1 o o o o o
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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motorola 2N2270
Abstract: 2N5861 MOTOROLA
Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:
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2N656
2N657
2N697
2N706
2N708
2N718
2N718A
2N869A
2N914
2N916
motorola 2N2270
2N5861 MOTOROLA
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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2n4890
Abstract: 2N4405 SILICON SMALL-SIGNAL DICE MM4005 MM4036 2N4890 MOTOROLA
Text: MOTOROLA SC -CDIODES/OPTOJ 6 3 6 7 2 5 5 M O T O R O L A SC 34 ÍF |h 3 b 7 S S S □□37BH7 ñ DIODES/OPTO 34C SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 37997 D T - 2*7-2.3 2C4405 — PNP DIE NO. LINE SOURCE — DSL250 This die provides performance similar to that of the following device types:
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2C4405
DSL250
2N4404
2N4405
2N4406
2N4407
2N4890
2N5864
2N5865
MM4005
SILICON SMALL-SIGNAL DICE
MM4036
2N4890 MOTOROLA
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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motorola 2N2270
Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.
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h3b7E54
007b70E
2N2896
2N3700#
2N2895
2N956
2N2897
2N718
2N2221A#
2N2222AI
motorola 2N2270
2N3947
2N956 MOTOROLA
JAN 2N2896
transistor motorola 2n3053
motorola 2N2270 to-18
mm3904
motorola 2N2219
2N4028
MM6427
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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