B64920A618X830 Search Results
B64920A618X830 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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b649
Abstract: D1001UK
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D1001UK 175MHz 100nF 10-30pF 16-100pF D1001UK 175MHz b649 | |
b649
Abstract: D1001UK 20V5A
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D1001UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK 20V5A | |
b649
Abstract: D1001UK D1019UK enamelled copper wire
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D1019UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK D1019UK enamelled copper wire | |
22SWG
Abstract: b649 D1002UK
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D1002UK 175MHz 019swg 22swg 19swg B64920A618X830 b649 D1002UK | |
b649
Abstract: HF power amplifier D1001UK D1002UK D1001UK
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D1002UK 175MHz 100nF D1001UK 10-30pF 16-100pF D1002UK 175MHz b649 HF power amplifier D1001UK D1001UK | |
Contextual Info: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS |
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D1002UK 175MHz 19swg 22swg B64920A618X830 | |
b649
Abstract: D1001UK D1019UK
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D1019UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK D1019UK | |
D5001UKContextual Info: TetraFET D5001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS |
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D5001UK 175MHz 22swg 19swg B64920A618x830 D5001UK | |
b649
Abstract: enamelled copper wire transistor mhz s-parameter low-noise VHF D1019UK zl 9312
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D1019UK 175MHz 100nF 16-100pF 10-30pF D1019UK 175MHz b649 enamelled copper wire transistor mhz s-parameter low-noise VHF zl 9312 | |
b649
Abstract: D1019UK ferrite core ER25
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D1019UK 175MHz 100nF 10-30pF 16-100pF D1019UK 175MHz b649 ferrite core ER25 | |
Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS |
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D1001UK 175MHz 19swg 22swg B64920A618X830 | |
b649
Abstract: D1001UK
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D1001UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK | |
enamelled copper wire
Abstract: semeLab 051 b649 D5001UK J102 fet
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D5001UK 175MHz 22swg 19swg B64920A618x830 enamelled copper wire semeLab 051 b649 D5001UK J102 fet | |
Contextual Info: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS |
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D1001UK 175MHz 19swg 22swg B64920A618X830 | |
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D1002UK
Abstract: b649
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D1002UK 175MHz 0019swg 22swg 19swg B64920A618X830 D1002UK b649 | |
Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS |
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D1001UK 175MHz 19swg 22swg B64920A618X830 | |
Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS H • LOW Crss |
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D1019UK 175MHz 19swg 22swg B64920A618X830 | |
Contextual Info: TetraFET D1002UK.03 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS |
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D1002UK 175MHz 19swg 22swg B64920A618X830 | |
J102 fet
Abstract: D5001UK
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D5001UK 175MHz 22swg 19swg B64920A618x830 J102 fet D5001UK |