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    B649 Price and Stock

    Vishay Intertechnologies M55342K11B649WRWBD

    Resistor Chip Thick Film 0402 649Ohm ?0.5% 1/20W ?100ppm/?C - Waffle Pack (Alt: M55342K11B649WRWBD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K11B649WRWBD Waffle Pack 13 Weeks 100
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    • 100 $4.7268
    • 1000 $1.7732
    • 10000 $1.7732
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    Vishay Intertechnologies M55342K11B649YSWBD

    Resistor Chip Thick Film 0402 649kOhm ?0.5% 1/20W ?100ppm/?C - Waffle Pack (Alt: M55342K11B649YSWBD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K11B649YSWBD Waffle Pack 7 Weeks 100
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    • 100 $6.2712
    • 1000 $3.003
    • 10000 $3.003
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    Vishay Intertechnologies M55342K12B649ERS6

    - Tape and Reel (Alt: M55342K12B649ERS6)
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    Avnet Americas M55342K12B649ERS6 Reel 7 Weeks 300
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    • 1000 $1.05417
    • 10000 $0.76934
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    Vishay Intertechnologies M55342K12B649WRULD

    Resistor Chip Thick Film 0603 649Ohm ?0.5% 1/10W ?100ppm/?C - Tape and Reel (Alt: M55342K12B649WRULD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K12B649WRULD Reel 7 Weeks 300
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    • 1000 $2.3989
    • 10000 $1.6731
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    Vishay Intertechnologies M55342K11B649DRTP

    - Tape and Reel (Alt: M55342K11B649DRTP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K11B649DRTP Reel 7 Weeks 4,000
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    • 10000 $1.32074
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    B649 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B649

    Abstract: B-649
    Contextual Info: SAW Components Satellite Receiver Filter B649 479,50 MHz Preliminary Data Sheet Metal package TO 39 Features ● Two-channel satellite receiver filter ● IF filter for DSB receivers ● Constant group delay Terminals ● Gold-plated NiFeCo alloy Dimensions in mm, approx. weight 1,0 g


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    B39481-B 649-B210 C61157-A7-A29 F61064-V8011-Z000 B649 B-649 PDF

    B688

    Abstract: B628 b649 transistor b688 b688 transistor b673 b673 power transistor b673 transistor b643 R B667
    Contextual Info: M AN646 Interfacing Motorola 68HC11 to Microchip SPI Serial EEPROMS communication. Serial EEPROM devices are available in a variety of densities, operational voltage ranges, and packaging options. Shannon Poulin Microchip Technology Inc. Microchip realizes that its customer base is very broad,


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    AN646 68HC11 68HC11. B688 B628 b649 transistor b688 b688 transistor b673 b673 power transistor b673 transistor b643 R B667 PDF

    LT829

    Abstract: 8085A intel 8080 MCS intel 8295 8041A 8080
    Contextual Info: m i e i APPLICATION NOTES AP-90 M ay 1980 An 8741 A/8041 A Digital Cassette Controller I Contents IN T R O D U C T IO N . 1 T H E C M -6 0 0 M IN I- D E K " .


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    AP-90 LT829 8085A intel 8080 MCS intel 8295 8041A 8080 PDF

    transistor b688

    Abstract: b673 power transistor b649 B688 b688 transistor B667 A709 transistor transistor b643 transistor B633 b673 transistor
    Contextual Info: M AN646 Interfacing Motorola 68HC11 to Microchip SPI Serial EEPROMS communication. Serial EEPROM devices are available in a variety of densities, operational voltage ranges, and packaging options. Shannon Poulin Microchip Technology Inc. Microchip realizes that its customer base is very broad,


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    AN646 68HC11 68HC11. transistor b688 b673 power transistor b649 B688 b688 transistor B667 A709 transistor transistor b643 transistor B633 b673 transistor PDF

    b649

    Abstract: D1001UK
    Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1001UK 175MHz 100nF 10-30pF 16-100pF D1001UK 175MHz b649 PDF

    b649

    Abstract: D1001UK 20V5A
    Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1001UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK 20V5A PDF

    b649

    Abstract: D1001UK D1019UK enamelled copper wire
    Contextual Info: TetraFET D1019UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1019UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK D1019UK enamelled copper wire PDF

    b617

    Abstract: b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e
    Contextual Info: Signal Acquisition and Conditioning With Low Supply Voltages SLAA018 August 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information


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    SLAA018 TMS7000 MC68HC11 TLV1543 b617 b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e PDF

    G1966M SAW FILTER

    Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
    Contextual Info: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation


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    PDF

    b649a

    Abstract: B649 2B649 2SD66 2SB649A
    Contextual Info: B649,B649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline T O -126 MOD I 1. Em itter 2. Collector 3. Base B649, B649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol B649


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    2B649 2SB649A 2SD669/A 2B649, 2SB649A 2SB649 D-85622 b649a B649 2SD66 PDF

    b649

    Abstract: SKM214
    Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Conditions ' V ds V dgr R gs = 20 ki2 Id Idm V gs Pd Tj, Tstg Visol humidity climate AC, 1 min, 200 iA DIN 40 040 DIN IEC 68T.1 Values Units 100 100 125 375 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V SEMITRANS M


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    SKM214 b649 PDF

    22SWG

    Abstract: b649 D1002UK
    Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1002UK 175MHz 019swg 22swg 19swg B64920A618X830 b649 D1002UK PDF

    b649

    Abstract: HF power amplifier D1001UK D1002UK D1001UK
    Contextual Info: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1002UK 175MHz 100nF D1001UK 10-30pF 16-100pF D1002UK 175MHz b649 HF power amplifier D1001UK D1001UK PDF

    burndy Y750

    Abstract: burndy Y35 Burndy Y35 hypress IEEE-837 burndy* YA Lug Burndy burndy Y39 STR 5634 kpb 1313 B455 E20
    Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND® IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING ® HYGROUND Features Type YGIB . . . . . . . . . . E-20 - E-21 and Benefits . . . . . . . . . E-5 - E-6 E-1 Type YGL-C . . . . . . . . . . . . . . . . E-7


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    KC22J12T13, EQC632C, B38-0330-00 burndy Y750 burndy Y35 Burndy Y35 hypress IEEE-837 burndy* YA Lug Burndy burndy Y39 STR 5634 kpb 1313 B455 E20 PDF

    B4404

    Abstract: BS-2028 BS 5419 B1329 B589 B938 b2498 B1276 B549 BS-2021
    Contextual Info: BURNDYWeld BCC-1 TYPE MOLDS Horizontal End to End BCC-1 Type Molds are used for horizontal end to end cable connections. Size range is #6 through 1000 MCM solid or concentric stranded copper conductors. Contact BURNDY Products for information on molds for


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    BCC-14 B-5623 B-5624 B-5625 B-5626 B-205 B-106 B-206 B4404 BS-2028 BS 5419 B1329 B589 B938 b2498 B1276 B549 BS-2021 PDF

    Contextual Info: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1002UK 175MHz 19swg 22swg B64920A618X830 PDF

    b649

    Abstract: D1001UK D1019UK
    Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS H • LOW Crss


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    D1019UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK D1019UK PDF

    D5001UK

    Contextual Info: TetraFET D5001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D5001UK 175MHz 22swg 19swg B64920A618x830 D5001UK PDF

    b649

    Abstract: enamelled copper wire transistor mhz s-parameter low-noise VHF D1019UK zl 9312
    Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A FEATURES B • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F E H G D • LOW Crss


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    D1019UK 175MHz 100nF 16-100pF 10-30pF D1019UK 175MHz b649 enamelled copper wire transistor mhz s-parameter low-noise VHF zl 9312 PDF

    b649

    Abstract: D1019UK ferrite core ER25
    Contextual Info: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss G


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    D1019UK 175MHz 100nF 10-30pF 16-100pF D1019UK 175MHz b649 ferrite core ER25 PDF

    burndy Y35 Hypress owner manual

    Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
    Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec


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    GC-08 YGIBW28-613-2N YGIBW28-675-2N YGIBW34-338-2N YGIBW34-400-2N YGIBW34-462-2N YGIBW34-550-2N YGIBW34-613-2N YGIBW34-675-2N YGL29C2 burndy Y35 Hypress owner manual burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual PDF

    NEC B1099

    Abstract: NEC b1098 str 6307 B1284 B1273 B1329 nec b1669 B1134 b1686 STR S 6307
    Contextual Info: BURNDY PRODUCTS BURNDYWeld BW-06 B BURNDYWeld™ Customer Service Open 8:00 am to 8:00 pm E.S.T. Monday — Friday Call Us At: 1-800-346-4175 FAX 1-800-346-9826 www.fciconnect.com 2 Customer Service: 1-800-346-4175 www.fciconnect.com BURNDYWeld™ TABLE OF CONTENTS


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    BW-06 YWeldTMWireMesh79 PATCUT129ACSR-18V NEC B1099 NEC b1098 str 6307 B1284 B1273 B1329 nec b1669 B1134 b1686 STR S 6307 PDF

    Contextual Info: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1001UK 175MHz 19swg 22swg B64920A618X830 PDF

    b649

    Abstract: D1001UK
    Contextual Info: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS


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    D1001UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK PDF