BA1 46 Search Results

Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics

Contextual Info: 144PIN PC100 Unbuffered SO-DIMM 256MB With 16Mx8 CL2 TS32MSS64V8D2 Description Pin Identification Symbol The TS32MSS64V8D2 is a 32M bit x 64 Synchronous Function A0~A11 Address inputs TS32MSS64V8D2 consists of 16 pieces of CMOS BA0, BA1 Banks Select 4Mx8bitsx4banks Synchronous DRAMs in TSOP-II 400mil

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

Contextual Info: AS4C64M16MD1 1 Gb 64M x 16 bit 1.8v High Performance Mobile DDR SDRAM Confidential Advanced (Rev. 1.0, Mar. /2014) Features Description 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

MT48LC16M16A2 rev B

Abstract: mclf MPC8XX MT48LC8M16A2 MT48LC MPC8xx pin MT48LC8M16A2TG-75 mpc860 users manual "mpc860 users manual" *48lc16m16a2
Contextual Info: TN-48-12 Interfacing with Motorola’s MPC8XX TECHNICAL NOTE INTERFACING SDRAM DEVICES WITH MOTOROLA’S MPC8XX The addressing for the MCP8xx uses A0 as the Most Significant Bit MSB , while the MSB for the SDRAM are the bank address lines BA1 and BA0 followed by A11.

54PIN

Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
Contextual Info: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 128MB With 16M X 16 CL3 TS16MMS64V6G Description Pin Identification The TS16MMS64V6G is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MMS64V6G Symbol Function A0~A12 Address inputs BA0~BA1 Select Bank

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX8 CL3 TS32MSS64V6D Pin Identification Description The TS32MSS64V6D is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function A0~A11 Address inputs BA0,BA1 Banks Select packages, a 2048 bits serial EEPROM and 1 piece of

M52S32162A

Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics

Contextual Info: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.

M52D32162A

Contextual Info: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)

Contextual Info: HYMD2326468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance

Contextual Info: MITSUBISHI ELECTRIC 64MSDRAM Pin Configuration x4 x8 xl6 \ Vdd 54 Vss o DQO DQO 2 53 DQ15 i n NC NC DQO NC NC NC DQ1 NC NC VddQ NC DQ1 DQ1 DQ2 VssQ NC DQ3 DQ2 DQ4 VddQ NC DQ5 DQ3 DQ6 VssQ NC DQ7 Vdd NC DQML /WE /CAS /RAS /CS BA0 A13 BA1(A12) AIO A0 Al A2

Contextual Info: IC INFORMATION Function DRAM CMOS Type HY57V561620BLT-H Model AVIC-DRV150 VDD1 1 54 VSS3 DQ0 2 53 DQ15 VDDQ1 3 52 VSSQ4 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9 DQ5 10 DQ6 11 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output

Contextual Info: IC INFORMATION Function 128Mbit SDRAM CMOS Type K4S281632D-TL1L Model AVIC-ZH8017ZT VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address

Contextual Info: IC INFORMATION Function 128Mbit SDRAM CMOS Type VDD K4S281632C-TL1L AVIC-H09 Model 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address

Contextual Info: HYMD116645A8-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A11, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance

Contextual Info: HYMD2646468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 93 107 90 104 pF Input Capacitance RAS, CAS, WE CIN2 93 107 90 104 pF Input Capacitance CKE0, CKE1 CIN3 63 77 58 72 pF

DPDD192MX8XSBY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1

Contextual Info: IC INFORMATION Function SDRAM CMOS Type J 1/1 E GEX-FM903XM/UC K4S640832E-TL1H Model VDD 1 54 VSS DQ0 2 53 DQ7 VDDQ 3 52 VSSQ NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 NC 13 51 NC A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ7 : Data input/output

Contextual Info: IC INFORMATION Function 128Mbit SDRAM CMOS Type M2V2840ATP-7L AVIC-H09 Model VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output

Contextual Info: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &

K4S280832B

Contextual Info: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47