144PIN Search Results

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs

SuperPro-5000

Abstract: atmel 89C51 user manual atmel 89C51 projects Superpro 3000U CF Socket DIP48 PLCC20 PIN DIAGRAM AND WORKING OF AT 89C51 89c51 c programming examples XELTEK cx0001 SUPERPRO 500P
Contextual Info: User’s Guide XELTEK Superpro 5000 Series Ultra-Fast, Stand‐Alone, 144pin Programmer of the Future XELTEK 1296 Kifer Rd. Unit 605 Sunnyvale, CA 94086 Tel: 408 530‐8080 Fax: (408) 530‐0096 www.xeltek.com IMPORTANT! 1. This manual applies to SuperPro 5000, SuperPro 5000E, SuperPro

K4S560832E

Abstract: K4S561632E
Contextual Info: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004

K4S281632F

Abstract: m464s1724f K4S281632
Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

Contextual Info: 144PIN PC133 MICRO SO-DIMM 256MB With 32M X 8 CL3 TS32MMS64V6F Description Placement The TS32MMS64V6F is a 32M x 64bits Synchronous Dynamic RAM high-density for PC-133. The TS32MMS64V6F consists of 8pcs CMOS 32Mx8 bits C Synchronous DRAMs in SOC packages and a 2048 bits

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX8 CL3 TS32MSS64V6D Pin Identification Description The TS32MSS64V6D is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function A0~A11 Address inputs BA0,BA1 Banks Select packages, a 2048 bits serial EEPROM and 1 piece of

K4S281632E

Contextual Info: 64MB Unbuffered uSODIMM SDRAM SDRAM Unbuffered uSODIMM 144pin Unbuffered uSODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB Unbuffered uSODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release Revision 1.1 (May, 2003)

Contextual Info: 16Mx72 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T6 Series DESCRIPTION The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

Contextual Info: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

support samsung pc133 sdram

Abstract: pc133 SDRAM DIMM 4MX16
Contextual Info: SERIAL PRESENCE DETECT PC133 SODIMM PC133 Unbuffered SDRAM SODIMM 144pin SPD Specification Rev. 0.0 Oct. 1999 Rev. 0.0 Oct. 1999 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Oct. 11, 1999 Jedec based PC133 SODIMM SPD Published.

HSD8M64B8A

Contextual Info: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.

kr 720

Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
Contextual Info: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.

K4S281632C-TL1L

Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L

Contextual Info: 16Mx72bits PC100 SDRAM SO DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T8 Series DESCRIPTION The HYM71V16M755HC(L)T8 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

m464s64* samsung

Abstract: K4S560832E K4S561632E
Contextual Info: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004

HYM71V16M655BLT8-8

Abstract: HYM71V16M655BLT8-S HYM71V16M655BT8-P HYM71V16M655BT8-S
Contextual Info: 16Mx64bits PC100 SDRAM SO DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M655B L T8 Series Preliminary DESCRIPTION The Hynix HYM71V16M655B(L)T8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin

RA12

Abstract: HYM72V32M736BLT6-H
Contextual Info: 32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B L T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board.

HYM72V16M656BTU6

Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

KMM464S824CT1

Contextual Info: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004

Contextual Info: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: Preliminary KMM466S824CT2_ 144pin SDRAM SODIMM KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung K M M 466S 824C T2 is a 8M bit x 64 S ynchronous

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM

RA12

Contextual Info: 32Mx64bits PC133 SDRAM SO DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T8 Series DESCRIPTION The HYM72V32M636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed