transformer ka
Abstract: CS61318 T1229
Text: T1/CEPT/ISDN-PRI TRANSFORMER For Use with Cirrus Logic CS61318 Chipset Extended and standard temperature range Dual and single through hole models available Models matched to leading transceiver ICs Most models UL 1459 and BABT EN 60950 recognized Isolation Voltage: 1500 Vrms MIN
|
Original
|
PDF
|
CS61318
T1229
583CT
T1229
F-39270
transformer ka
|
Sumida DATE CODE
Abstract: AN1002 D10012 SD10012 Sumida Corporation TNETD3000
Text: D10012 SD10012 DSL Isolation Transformer PRODUCT COMPLIANCE FEATURES • For top-performance in ADSL modem line interfaces. • UL/C- UL recognized file number: • Drop in replacement for EP13. • BABT certificate of recognition: • Total Harmonic Distortion rated -90.8dB, typ. between
|
Original
|
PDF
|
D10012
SD10012
30kHz-200kHz.
300kHz.
30kHz-1
IEC60950.
Sumida DATE CODE
AN1002
D10012
SD10012
Sumida Corporation
TNETD3000
|
G6A-BS
Abstract: G6A-234P G6A-234P-BS12VDC babt BS6301 G6A-234P-BS EN4-10
Text: G6A–BS BABT Approved Relay BABT Approved Relay Meeting the Requirements of EN41003:1993 as endorsed, formerly BS6301:1989 Amendment 5 for Supplementary Isolation BABT BABT Approved No. CR/0098. Height of only 8mm from PCB. Wide switching load – 10µA to 2A.
|
Original
|
PDF
|
EN41003
BS6301
CR/0098.
G6A-234P-BS
G6A-234P-BS
G6A-BS
G6A-234P
G6A-234P-BS12VDC
babt
EN4-10
|
ETAL
Abstract: BS7002 CTR21 P1200 P2001 P3034 TG25 ETAL P1200
Text: PRODUCT DATA SHEET P3034 LINE MATCHING TRANSFORMER Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Low Distortion 12.6mm 0.5" seated height Vacuum encapsulated IEC 950, UL 1950 and EN 60950 Certified UL Recognized Component BABT Certificate of Recognition
|
Original
|
PDF
|
P3034
34plus
P3034
P1200
34plus
P1200,
ETAL
BS7002
CTR21
P2001
TG25
ETAL P1200
|
Untitled
Abstract: No abstract text available
Text: T1/CEPT/ISDN-PRI TRANSFORMERS Single Through Hole, 1500 Vrms Extended and standard temperature range Dual and single through hole models available Models matched to leading transceiver ICs Most models UL 1459 and BABT EN 60950 recognized Isolation Voltage: 1500 Vrms MIN
|
Original
|
PDF
|
PE-64931
PE-64933
PE-64934
PE-64936
PE-64937
PE-64940
60/tube
|
EN-60950
Abstract: babt 4 pin transformers
Text: T1/ CIPT/ISDN-PRI TRANSFORMERS P/N: S8841 DATA SHEET Page : 1/1 Feature ! Dual SMT package contains both transmit and receive Transformers. Model matched to leading transceiver ICs. UL 1459 and UL 1950 recognized. EN 60950 safety agency approval per BABT.
|
Original
|
PDF
|
S8841
S8841
EN-60950
babt
4 pin transformers
|
Untitled
Abstract: No abstract text available
Text: ELECTRI CAL SPECI FI CATI ONS I nput Input……………36-75 VDC PS2365 Total Power Input Voltage Output 150 Watts 36-75 VDC 12V SPECI AL FEATURES • • • • • • • 36-75 VDC input UL, CSA, TUV, BABT Recognized Enable control active low EN55022 Class B
|
Original
|
PDF
|
PS2365
EN55022
4242VDC
EN55022
|
Untitled
Abstract: No abstract text available
Text: ELECTRICAL SPECIFICATIONS Input Input……………85 -264 VAC; 47-63Hz; Power Factor >0.99 PS2357 Total Power Input Voltages Outputs 350 Watts 85-264 VAC Two SPECIAL FEATURES • • • • • • 85-264 VAC input with under voltage protection UL, CSA, TUV, BABT Recognized
|
Original
|
PDF
|
47-63Hz;
PS2357
4242VDC
EN55022
|
FAN 7629
Abstract: E 7629 EN55022-B NAN55 EN60950 EN41003
Text: NAN55 SERIES Single, dual and triple output Recommended for low cost, high volume design ins 90VAC to 264VAC universal input range EN55022-B conducted noise Maximum component height 1.2 inches UL, CSA, VDE and BABT safety approvals Overvoltage and short circuit protection
|
Original
|
PDF
|
NAN55
90VAC
264VAC
EN55022-B
264VAC.
NAN55-7608
NAN55-7628,
FAN 7629
E 7629
EN60950 EN41003
|
Untitled
Abstract: No abstract text available
Text: REV. S t a t u s REVISION F REVISED AND REDRAWN ON CAD/CAM 0 4 / 0 9 / 9 2 TS REVISION G TEMECULA -W A S CARSON 0 5 / 2 9 / 9 8 TS LOW PROFILE BABT TELECOMMUNICATION COUPLING TRANSFORMER 600 : 600 C£ A. Electrical Specifications 25°C 1. 2. 4. 5. 6.
|
OCR Scan
|
PDF
|
45dBm
10dBm
3500Hz
4000Hz
300Hz
TTC--238
|
C3063
Abstract: c3063 japan SCR 600
Text: MOTOROLA O rder this docum ent by M QC3061/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output MOC3061 MOC3062 MOC3063* [IFT = 15 m A Max] [IFT = 10 m A Max]
|
OCR Scan
|
PDF
|
QC3061/D
MOC3061
MOC3062
MOC3063*
C3061,
MOC3062
MOC3063
115/240ure
MOC3Q61/D
MOC3061/D
C3063
c3063 japan
SCR 600
|
triac driver opto moc3021
Abstract: MOC3Q23 Motorola Application Note AN-780A
Text: MOTOROLA O rder this docum ent by M QC3020/D SEMICONDUCTOR TECHNICAL DATA TO VD E UL CSA SETI ® SEM K O DEMKO NEMKO BABT G lobal O ptoisola to r 6-Pin DIP Random-Phase Optoisolators Triac Driver Output MOC3021 MOC3022 MOC3023* [IFT = 15 m A Max] [IFT = 10 m A Max]
|
OCR Scan
|
PDF
|
QC3020/D
MOC3021
MOC3022
MOC3023*
MOC3020
MOC3020/D
triac driver opto moc3021
MOC3Q23
Motorola Application Note AN-780A
|
Untitled
Abstract: No abstract text available
Text: /W v i c o n V“ DC-DC Conveners 25 to 100 Watts • ■ ■ ■ ■ ■ ■ ■ ■ ■ Up to 50W /Cubic Inch UL, CSA, TUV, BSI, VDE, BABT CE M arked 80-90% Efficiency Size: 2.28” x 2.4” x 0.5” 57,9 x 61,0 x 12,7 Remote Sense and Current Limit Logic Disable
|
OCR Scan
|
PDF
|
150/300V
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M QC3081/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA SETI ® SEMKO DEMKO BABT NEMKO G lo bal Optoisola to r 6-P in DIP Zero-Cross Optoisolators Triac Driver Output MOC3081 M OC3082 [IFT = 15 m A Max] [IFT = 10 m A Max]
|
OCR Scan
|
PDF
|
QC3081/D
MOC3081
OC3082
C3081,
MOC3082
MOC3083
--------------------------------MQC3081/D
MOC3081/D
|
|
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M OC8080/D SEMICONDUCTOR TECHNICAL DATA T VDE O UL @ 1 CSA SETI SEM KO ® DEM KO NEM KO BABT MOC8O8O G l o b a l O p t o i s o la t o r 6 -P in DIP Optoisolator [C TR = 500% Min] Darlington Output M otorola Preferred Device
|
OCR Scan
|
PDF
|
OC8080/D
MOC8080/D
|
MQCZ500
Abstract: triac TY 500 T
Text: MOTOROLA O rder this docum ent by M OCZ500/D SEMICONDUCTOR TECHNICAL DATA & TO VDE UL <H> < D CSA SETI SEMKO ® DEM KO NEMKO BABT GlobalO p toisola to rT MOCZ500 Motorola Preferred Device Mini Zero-Crossing AC SSR This device consists of a gallium arsenide infrared emitting diode optically
|
OCR Scan
|
PDF
|
OCZ500/D
MOCZ500
MOCZ500/D
MQCZ500
triac TY 500 T
|
C3162
Abstract: 13TRIAC c3163
Text: MOTOROLA O rder this docum ent by M OC3162/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL < § •. CSA SETI SEM K O ® ® DEMKO NEMKO BABT MOC3162 MOC3163* [IFT = 10 m A M ax] G lobalO ptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output
|
OCR Scan
|
PDF
|
OC3162/D
C3162
13TRIAC
c3163
|
MOTOROLA 813
Abstract: c8107 8107 4 pin dip
Text: MOTOROLA Order this document by MOC8IO6/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® CSA SETI SEMKO NEMKO DEMKO BABT Global Optoisolator 6-Pin DIP Optoisolators for Power Supply Applications No Base Connection MOC8 IO 6 MOC8107 MOC8 IO 8 [CTR = 50-150%]
|
OCR Scan
|
PDF
|
MOC8107
MOTOROLA 813
c8107
8107 4 pin dip
|
til117 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA UL CSA SETI BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
|
OCR Scan
|
PDF
|
MTIL117/D
TIL117
MTIL117
MTIL117
til117 motorola
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N26/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI M4N26 BABT 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
|
OCR Scan
|
PDF
|
M4N26/D
M4N26
M4N26
|
Optoelectronics c3
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N37/D SEMICONDUCTOR TECHNICAL DATA TO UL f t CSA SETI M4N37 BABT 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
|
OCR Scan
|
PDF
|
M4N37/D
M4N37
M4N37
Optoelectronics c3
|
M4N35
Abstract: No abstract text available
Text: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
|
OCR Scan
|
PDF
|
M4N35/D
M4N35
M4N35
|
mocz500
Abstract: No abstract text available
Text: MOTOROLA Order this document by MQCZ500/D SEMICONDUCTOR TECHNICAL DATA & TO VDE <§A UL CSA SETI ® SEMKO DEMKO NEMKO BABT G lo b a lO p to is o la to r M O CZ500 Motorola Preferred Device M ini Zero-C rossing AC SSR This device consists of a gallium arsenide infrared emitting diode optically
|
OCR Scan
|
PDF
|
MQCZ500/D
CZ500
2PHX34139P-2
MOCZ500/D
mocz500
|
H11AV1
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices
|
OCR Scan
|
PDF
|
H11AV1/D
H11AV1
11AV2
H11AV2
|
