BAW 56 Search Results

MBG-1026

Abstract: m7420A m7437 MBG-1025 MBG-1156 MBG-1014 MBG-1141 MBG-1126 MBG-1154 MBG-1152
Contextual Info: "!73 the complete microwave solution BAW Delay Lines Teledyne’s Bulk Acoustic Wave BAW Product Line has been producing BAW delay devices since the early 1960’s. Over the years, Teledyne Microwave has constantly improved BAW technology and is currently the world’s only supplier of microwave bulk acoustic wave delay devices.

A1s sot23

Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
Contextual Info: Silicon Switching Diode Array BAW 56 For high-speed switching applications ● Common anode ● Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

A1S diode

Abstract: A1s sot23 a1s sot-23 diode a1s SOT-23 marking a1s a1s package Q62702-A688 transistor A688 a1s, sot-23 SOT 23 A1S
Contextual Info: Silicon Switching Diode Array BAW 56 For high-speed switching applications ● Common anode ● Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode num m Type Marking Ordering Code Pin Configuration BAW 56W A1s Q62702-A1031 1 =C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Symbol Parameter

Q62702-A1031

Abstract: marking code AC sot 323 diode
Contextual Info: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s Q62702-A1253 1/4 = C1 2/5 = C2 Package

Marking a1s

Abstract: 330 marking diode 7.a sot-23
Contextual Info: SIEM EN S Silicon Switching Diode Array BAW 56 • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) 3 » M SOT-23 1M » EH A07006 Maximum Ratings per Diode

A1S diode

Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
Contextual Info: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

BAW56

Abstract: SOT-23 marking a1s BAW 56
Contextual Info: BAW 56 Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW 56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW56S

Abstract: Q62702-A1253 VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Common anode 6 • Internal galvanic isolated Diodes in one package 2 1 3 VPS05604 Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363

6A1 diode

Contextual Info: BAW 56U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Common anode
Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration

6A1 diode

Abstract: BAW56S VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s

Q62702-A397

Abstract: BAW76
Contextual Info: BAW 76 S iliziu m -P la n a r-L o g ik -D io d e B A W 7 6 ist eine Silizium-Planar-Diode in „Double-Heat-Sink"-Technik im Glasgehäuse 56 A 2 DIN 41883 D O -35 . Die Kathode ist durch einen roten Farbring gekennzeichnet. BAW 76 eignet sich besonders zum Einsatz als schnelle Schaltdiode in Rechenmaschinen,

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

Contextual Info: BAW 56 Silizium-Planar-Doppel-Dioden für die Oberflächenmontage gemeinsame Anode Surface Mount Silicon Planar Dual Small-Signal Diodes (common anode) Nominal current – Nennstrom 1.1 2.9 ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung

high frequency oscillator

Abstract: JL9113 0604B 1.8 GHz SAW oscillator high precision TCXO Crystal Oscillators 3 GHz SAW oscillator NEL Frequency Controls quartz crystal oscillator 40 kHz
Contextual Info: 0604B Rev. - NEL Frequency Controls Inc. Ultra High Frequency Oscillator NEL Frequency Controls Inc. Ultra High Frequency Oscillator has extended the frequency range of the bulk acoustic wave BAW quartz crystal oscillator with its superior frequency tolerance

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

CROSS SEIKO

Abstract: toshiba onenand ARM1176JZ-STM Baw delay line tdk cross reference wildpasstm
Contextual Info: February 2008 NWR150 Low Insertion Loss BAW Filter for GPS Data Sheet Revision 2.4 Communication Solutions Edition 2008-02-11 Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW 56W T1 M otorola Preferred D evice CATHODE 3 C IANODE MAXIMUM RATINGS -H — ° 1 -H — o 2 TA = 25 C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current if 200 mAdc iFM(surge)

2N2369 SOT-23

Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

Contextual Info: SAW Components BAW Duplexer Series/Type: B7692 The following products presented in this data sheet are being withdrawn. Ordering Code B39202B7692A710 Substitute Product Date of Withdrawal 2012-12-21 Deadline Last Orders 2013-12-31 Last Shipments 2014-02-28

diode marking w8

Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast