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    equivalent transistor c 5888

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency


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    PDF bbS3R31 BFS520 OT323 OT323 OT323. equivalent transistor c 5888

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


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    PDF Q0EMS73 bbS3031 003457b

    S3C marking

    Abstract: No abstract text available
    Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.


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    PDF BF556A BF556B BF556C BF556B 23SHt. bbS3031 S3C marking

    apx transistor

    Abstract: No abstract text available
    Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A


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    PDF bbS3T31 00Z353T BF545A; BF545B; BF545C BF545A BF545B apx transistor

    BB530

    Abstract: No abstract text available
    Text: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.


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    PDF BF245A BF245A/0 0023SD4 bhS3T31 7Z62701 hbS3T31 BB530

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE D ^53*131 ODllbhS 8 PHR605CT SERIES r - O .3 - 17 VERY FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and 'non-snap-off'. They are intended for use in


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    PDF PHR605CT bbS3031