BC25 Search Results

BC252

Abstract: BC251 bc256 BC251B C251A BC256B bc256a BC252C bc252a
Contextual Info: MOTOROLA SC ÍXSTRS/R F> 6367254 ~Tb M OTO RO LA SC XSTRS/R D eT| L,3t,7aS4 DGfllt.7b 1 96D F 81676 D - BC251,A,B,C BC252,A,B,C BC256,A,B M A X IM U M R A T IN G S Sym bol R a tin g BC B C B C 2 5 6 251 2 5 2 U nit Collector-Emitter Voltage VC E O 65 45

bc1078

Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

SPHE8202

Abstract: SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt
Contextual Info: Saalfeld & Freitas / Curitiba + D4 1N4148 SMT CDLDO 100 BC25 jan/2006 RFGND 1000PF GND 0.1UF BC26 0.01UF 0.1UF 0.1UF BC22 0.1UF C43 0.1UF BC21 BC24 3904 Q12 + DVD_VR CD_VR 0.1UF 0.1UF BC28 0.1UF BC29 RFGND RFGND Q9 2SK3018 2 R52 R45 2 Q7 2SK3018 100K 100K

BC357

Abstract: BC336 BC348 bc330 BC333 bc332 BC358 BC267 BC347 BC315
Contextual Info: V CE SAT Pd (mW) 'c (mAI V CEO (V ) min £ ax BC251 BC252 BC253 BC256 BC257 P P P P P TO-92F TO-92F TO-92F TO-92F TO-92B 300 300 300 300 300 100 100 100 100 100 45 25 25 64 45 125 125 125 125 70 900 900 900 500 450 A # BC258 BC259 BC260 BC261 BC262 P P P

BC519

Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC560AP

Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C

2SA1286H

Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI

Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. BC258C V C80 V CEO (V) Min (V) Min ^EBO IV) Min 30 25 5 Pd ’c (W) (A) 6Tc=25°c 0.3 'cao (mA) Max 'c es v ce (V) (MA) Max

BC250

Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100
Contextual Info: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light

bc322

Contextual Info: , One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,

BC238 h parameter

Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Contextual Info: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

bc177

Abstract: BC257
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

BC177

Abstract: BC257 BC520 bc1778 bc258 BC317 BC321 BC320 bc3078 BC107
Contextual Info: BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 KmmoGtgfimoMNHwoMMwmNwmNmomMMwmmmoooHMígetMemmm^^ THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9.

BC307A

Abstract: BC32b BC259 BC259B BC307 BC307B BC307C BC308 BC308A BC308B
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. BC25SC ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 30 25 5 Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) Fd (W) Tc=25° (A) 0.3 0.1 'cso ^CB 'c e s ^ce (PA) 0<V) (pA) Max 0 (V)

BC257

Abstract: BC307 BC107 BC307 micro electronics bci77 BC177 BC178 BC179 BC237 BC258
Contextual Info: BC 177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 / o o er o LU LU THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9 BC257, 8, 9 are complementary to BC167, 8, 9

BC257

Abstract: BC320 BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC177 BC178
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.

Contextual Info: COIÎL TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) W @Tc=25°c 'c & (mA) @ Freq CDIL (MHz) (pF) Case Max Style @ V cbo ^CEO w Min (V) Min Min BC252C 30 25 5

bc352

Abstract: BC251 BC335
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. CASE Pd RITY IC IC VCEO mW (mA) (V) min fT Cob N.F. max IC min max max (MHz) (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS max VCE (mA) (V) (V) (mA) BC225 BC237 BC238 BC239 BC250 P N N N P TO-106 TO-92F TO-92F

2SA952L

Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E

BC251

Abstract: BC251A 8C252 BC252 BC256 bcX59 BC251B BC252C BC556 BCX59-8
Contextual Info: MOTOROLA SC ÍXSTRS/R F> 6367254 Tb MOTOROLA SC dF | fc,3L,7ES4 DDfilb?!, 96D XSTRS/R F D 81676 7 * 2 9 - /[1 BC251,A,B,C BC252,A,B,C BC256,A,B M A X I M U M R A T IN G S Sym bol R a tin g BC BC BC 2 5 6 251 2 5 2 U n it C o lle c to r-E m itte r Voltage

BC167

Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

AH40

Abstract: AW33 AA41 BC35 EPF8050M
Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device