BC847, 215 Search Results

c547b

Abstract: c547c c547b transistor c547b W c547c transistor transistor c547c transistor C547b transistor C547 npn BC547 sot54 c547c equivalent
Contextual Info: BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 07 — 10 December 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] BC847

c547b

Abstract: c547c c547b W c547b w 65 transistor c547c philips c547c c547c transistor c547b transistor c547b w 19 c547b w 42
Contextual Info: BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 06 — 19 May 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number [1] Package PNP complement Philips

BC847 smd

Abstract: bc847b nxp V6 SC70 SMD code marking v8 sot323 45V100 BC847 nxp
Contextual Info: BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 — 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

c138 transistor

Abstract: OM5729 free IC 555 application note ic 555 TDA8083 SP5659 TSA5059T TDA8083H BSN20 AN99024
Contextual Info: APPLICATION NOTE Phase Noise Measurements TSA5059 versus SP5659 AN99024 Philips Semiconductors Phase Noise Measurements TSA5059 versus SP5659 Application Note AN99024 Abstract This report describes comparative measurements on phase noise behaviour between the pin and software

BCB46

Abstract: BC847 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û which is designed for low power surface mount applications.

marking A4t

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR These transistors are designed for general purpose amplifier applications. They are housed In the SOT-323/SC-70 which is designed for low power surface mount applications.

SMD Transistor z6

Abstract: transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

465B

Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd transistor marking z8

Contextual Info: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18060A

Contextual Info: Document Number: MRF18060A Rev. 11, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from

Z1 Transistor

Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Document Number: MRF18090B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

SMD Transistor z6

Abstract: smd transistor marking z3 smd transistor marking z1 smd transistor z4 SMD transistor 2x sot 23 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 transistor smd z3 J305 equivalent transistor Z1 SMD
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd transistor marking j6

Abstract: SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from

smd transistor marking z1

Abstract: marking TRANSISTOR SMD nf c4 MRF18060A
Contextual Info: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd transistor marking z8

Contextual Info: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18060A

Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from

motorola regulator

Abstract: 103 potentiometer MRF18060A
Contextual Info: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

transistor 835

Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Contextual Info: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558

Analog Voice scrambler

Abstract: TDA7050 transistor 835 TRANSISTOR regulator PCF2104 transistor 458 AUDIO Amplifier with transistor BC548 Philips Semiconductors Selection Guide BSN10A 2n5551 128
Contextual Info: Philips Semiconductors Functional index Selection guide PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 Multistandard programmable analog CMOS transmission IC 110 TEA1060; TEA1061 Versatile telephone transmission circuits with dialler interfac 483 TEA1062; TEA1062A

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs

rkm 3B

Abstract: SO2484 BCW67E
Contextual Info: TYPES* MAXIMUM RA TINGS Markmg PNP NPN ELECTRICAL CHARACTERISTICS AT 25 C P tot "cl30 “CEO “EBO lC V V V mA 50 45 50 45 50 45 50 45 50 45 50 45 30 i 25 30 25 30 25 30 25 30 ~ 25 30 25 5 5 5 5, 5 5 5 5 5 ~ 5 5 5 500 ~ 310 1 500 310 500 310 500 310 ' 500