BC856S Search Results

5F smd transistor

Abstract: SMD Transistor 5f smd transistor marking C2 smd transistor b2 e2 smd transistor Transistors Diodes smd e2 smd transistor ja marking 5F MARKING 5F SOT363 SMD MARKING E1
Contextual Info: Transistors SMD Type PNP General Purpose Double Transistor KC856S BC856S SOT-363 1.3 Unit: mm +0.1 -0.1 0.525 0.65 +0.15 2.3-0.15 Two transistors in one package +0.1 1.25-0.1 Features 0.36 Reduces number of components and board space No mutual interference between the transistors.

marking 5ft sot363

Abstract: 5FT SOT363 SOT363 5Ft marking 5Ft 5Ft marking SOT-363
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x • • • BC856S Multi-chip Transistor Ultra-Small Surface Mount Package

marking 5ft sot363

Abstract: 5FT SOT363
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • x x • • • BC856S PNP Plastic-Encapsulate Halogen free available upon request by adding suffix "-HF"

transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: BC856S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BC846S

Abstract: BC856S BC857S BC858S
Contextual Info: BC856S . BC859S BC856S . BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 2 2.1 Type Code 1 1.25±0.1

BC858S

Abstract: BC848S BC846S BC856S BC857S
Contextual Info: BC856S . BC858S PNP General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-04-09 Dimensions / Maße in mm 2±0.1 5 2 2.1 Type Code 1 Plastic case Kunststoffgehäuse

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

BC856S

Abstract: VPS05604 H12E
Contextual Info: BC856S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BC846S

Abstract: BC856S BC857S BC858S
Contextual Info: BC856S . BC859S BC856S . BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 2±0.1 2 x 0.65 5 Type Code 1 2 1.25±0.1 4 2.1±0.1 6 0.9±0.1

Marking 3ds sot

Abstract: transistor 5B1 BR 101 Transistor
Contextual Info: SIEMENS BC856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low colfector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Fi FI FI U

marking 5ft sot363

Abstract: MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC856S PNP general purpose double transistor Product specification 1999 Aug 24 Philips Semiconductors Product specification PNP general purpose double transistor BC856S FEATURES • Two transistors in one package

pnp transistor 313 smd

Abstract: MARKING 5F SOT363 SMD Transistor 5f TRANSISTOR SMD MARKING CODES BC856S TRANSISTOR SMD CODE PACKAGE SOT363 transistor SMD MARKING CODE MARKING CODE SMD IC 5F smd transistor
Contextual Info: BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.

marking B3A sot23-5

Contextual Info: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC856S PNP Plastic-Encapsulate SOT-363 G C B A H M K J D L DIMENSIONS Revision: B 2013/01/01

transistor marking 6c1

Abstract: transistor marking E2 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC856S SOT-363 DUAL TRANSISTOR PNP+PNP FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors

BC856S

Abstract: VPS05604
Contextual Info: BC856S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

Contextual Info: BC856S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

Contextual Info: SMD Type Product specification KC856S BC856S SOT-363 1.3 Unit: mm +0.1 -0.1 0.525 0.65 +0.15 2.3-0.15 Two transistors in one package +0.1 1.25-0.1 Features 0.36 Reduces number of components and board space No mutual interference between the transistors. +0.05

sot363 marking DATE code

Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor marking 6c1

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years