BCR 150 V- 12 Search Results

SC-75

Contextual Info: BCR 129T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ 2 C 3 1 R1 1 2 B E VPS05996 EHA07264 Type Marking BCR 129T WVs Pin Configuration 1=B 2=E Package 3=C SC-75 Maximum Ratings

129S

Contextual Info: BCR 129S NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, 4 driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R-| = 10k£2) Cl B2 FI FI " j r v

Contextual Info: BCR 129S NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=10kΩ) Type Marking Ordering Code Pin Configuration

Contextual Info: BCR 129 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 129 WVs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

VPS05604

Contextual Info: BCR 129S NPN Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ) 2 3 1 C1 B2 E2

Contextual Info: SIEMENS BCR 129S NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, 4 5 driver circuit 6 , > ^ • Two galvanic internal isolated Transistors in one package -'-'jjl Jl I • Built in bias resistor (R-i=10k£2)

W967d6hb

Abstract: W967 CRAM 256mb
Contextual Info: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

Contextual Info: BCR 129 NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 129 WVs 1=B Q62702- Package 2=E 3=C SOT-23 Maximum Ratings

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

Contextual Info: f i- BCR SERIES / ¿ I - e? S ' D i s t r i b u t o r It e m Thick Film Chip Resistors OU TSTA N D IN G FEATURES • S e v e n S ty le s /S ix P o w e r R a tin g s A v a ila b le - Including popular 0805 and 1206 versions • ± 0 .5 % T o le ra n c e o ffe re d - Low cost solution to precision requirements

MT45W8MW16BGX-7013LWT

Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ

synchronous nor flash

Abstract: BCR10 M69KB128AB bcr100
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns

BCR10

Abstract: M69KB128AB
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and

Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ

PF38F1030W0Y

Abstract: PF38F2030 PF38F 3117* intel
Contextual Info: Intel Wireless Flash Memory W18 128-Mbit W18 Family with Synchronous PSRAM Product Features Datasheet Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option — Bottom or Top Flash Parameter

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

SCR FIR 3 D

Abstract: SMD MARKING CODE A20 infineon memory A22 SMD CODE SCR IC CHIP smd code marking HD smd codes marking A21 smd diode code WP transistor marking A21 A22 SMD MARKING CODE
Contextual Info: Data Sheet, V1.5, May 2005 HYE18P64160AF-9.6 HYE18P64160AF-12.5 HYE18P64160AF-15 S y n c h r o n o u s B u r s t C e l l u l a r R A M TM 1 . 5 G CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-5 Published by Infineon Technologies AG,

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

numonyx 106 ball

Abstract: numonyx 107-ball Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and