BCV47 Search Results

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA

BCV28

Abstract: BCV27 BCV47 BCV48 FMMT38A DSA003671
Contextual Info: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C B PARTMARKING DETAILS – BCV27 – ZFF BCV47 – ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.

SOT23 BCV 27

Abstract: fgs npn marking BCV BCV26 BCV27 BCV46 BCV47 marking BCV H
Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV26, BCV46 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV47 philips

Abstract: JJ SOT23 BCV27 BCV47
Contextual Info: • btS3*ì31 0024537 Ifl? H A P X N AMER PHILIPS/DISCRETE b?E D BCV27 BCV47 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SO T23 envelope. P-N-P complement is B C V 26/46. QUICK REFERENCE DATA BCV27 Collector-emitter voltage open base

BCV47

Abstract: BCV27 BCV26 BCV46
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS

Contextual Info: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * H igh VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTARY TYPES - p C BCV27 - BCV28 BCV47 - BCV48 PAR TM ARKING DETAILS - BCV27 - ZFF B C V 4 7 - ZFG SOT23

Contextual Info: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * HighVCE0 * Low saturation voltage COMPLEMENTARY TYPES- BCV27 - BCV28 BCV47 - BCV48 PARTMARKING DETAILS - 0w / BCV27 - ZFF BCV47-ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

Contextual Info: BCV26 IS OBSOLETE PLEASE USE MMBTA64 BCV46 IS CURRENTLY ACTIVE BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47

BCV47

Contextual Info: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C

Contextual Info: BCV47 80 V, 500mA NPN Darlington Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L For general AF application high collector current 3 3 C B Top View High current gain

marking code fg

Contextual Info: BCV47 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount

Contextual Info: BCV47 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV47 TRANSISTOR NPN SOT–23 FEATURES  High Collector Current  High Current Gain MARKING:FG 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

marking code fg

Abstract: transistor marking 020 "Darlington Transistor" BCV47 80 V NPN epitaxial silicon transistor vce max 100 ic max 100MA NPN
Contextual Info: Central BCV47 TM Semiconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

bcv47 npn darlington

Abstract: Diodes BCV47 BCV47 BCV27
Contextual Info: BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol BCV27 BCV47 BCV27 BCV47 Collector Base Voltage Collector Emitter Voltage Value 40 80 30 60 VCBO VCEO

sot-23 Marking pcA

Contextual Info: SIEMENS NPN Silicon Darlington Transistors BCV 27 BCV47 • For general A F applications • High collector current • High current gain • Complementary types: B C V 26, B C V 46 PNP Type Marking Ordering Code (tape and reel) PinC :onfigur ation 2 1 3

BCV47

Contextual Info: BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS • ■ ■ ■ Type Marking BCV27 FF BCV47 FG SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE DARLINGTON HIGH GAIN, HIGH INPUT IMPEDANCE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV47 TRANSISTOR NPN SOT–23 FEATURES  High Collector Current  High Current Gain MARKING:FG 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

smd npn darlington bcv47

Abstract: smd npn darlington BCV27 BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON TRANSISTORS BCV27 BCV47 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking:BCV27= FF BCV47= FG ABSOLUTE MAXIMUM RATINGS

Marking Code FGs

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

BCV47

Abstract: BCV26 BCV27 BCV46
Contextual Info: BCV27, BCV47 NPN Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-01-20 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4

P25 PNP

Abstract: SO4401 2369 BCV27 BCV47
Contextual Info: F Z J SGS-THOMSON SURFACE MOUNT DEVICES ^ 7 # RföD [^©[I[L[i gra©K!l D O S GENERAL PURPOSE & INDUSTRIAL NPN DARLINGTONS Type VCBO v CEO •c ptot hpE @ (C 1 VCE VCE (sat @ >C ' 'B fT typ Marking max BCV27 BCV47 SO 517 (V) (V) (mA) (mW) 40 80 40 30 60