transistor bd 292
Abstract: BD240C 20mH 1A power transistor bd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers
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O-220
25deg
C-120
transistor bd 292
BD240C
20mH 1A
power transistor bd
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Untitled
Abstract: No abstract text available
Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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BD176/178/180
O-126
BD176
BD178
BD180
BD180
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bd136g
Abstract: bd140 bd series of pnp transistor BD136 BD140 pnp transistor bd 142 transistor
Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
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BD136,
BD138,
BD140
BD136
BD138
BD140
bd136g
bd series of pnp transistor
BD140 pnp transistor
bd 142 transistor
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to225aa
Abstract: TO-225AA pin diagram BD140 Power Transistors TO-225aa Case to.225aa 225AA to225aa case 77 BD136 BD136G BD138G
Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available*
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BD136,
BD138,
BD140
BD136
BD138
to225aa
TO-225AA
pin diagram BD140
Power Transistors TO-225aa Case
to.225aa
225AA
to225aa case 77
BD136
BD136G
BD138G
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transistor BD 736
Abstract: TRANSISTOR bd 737
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC
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MMJT350T1
OT-223
transistor BD 736
TRANSISTOR bd 737
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BD140 application circuits circuits
Abstract: bd140 pin out TO-225AA BD 140 transistor BD 139 140 BD136G BD136-D BD136 pin transistor bd 138 power transistor audio amplifier 500 watts
Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
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BD136,
BD138,
BD140
BD136
BD138
BD136/D
BD140 application circuits circuits
bd140 pin out
TO-225AA
BD 140 transistor
BD 139 140
BD136G
BD136-D
BD136 pin
transistor bd 138
power transistor audio amplifier 500 watts
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BD136
Abstract: BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G
Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
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BD136,
BD138,
BD140
BD136
BD138
O-225
BD136G
BD136 pin
BD140 pnp transistor
BD140 application circuits circuits
bd136 N
BD138G
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pin diagram BD140
Abstract: bd140 pin out bd136g transistor BD140 BD136 pin BD 139 140 BD136 BD140 application circuits circuits bd136 N
Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
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BD136,
BD138,
BD140
BD136/D
pin diagram BD140
bd140 pin out
bd136g
transistor BD140
BD136 pin
BD 139 140
BD136
BD140 application circuits circuits
bd136 N
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transistor bd 370
Abstract: 30240 MMJT350T1
Text: ON Semiconductort MMJT350T1 Bipolar Power Transistors PNP Silicon 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring
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MMJT350T1
r14525
MMJT350T1/D
transistor bd 370
30240
MMJT350T1
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POWER BIPOLAR JUNCTION TRANSISTOR
Abstract: AYW marking code IC marking codes transistors sot-223 transistor bd 138 MMJT350T1 MMJT350T1G T350
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE
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MMJT350T1
OT-223
T350G
MMJT350T1/D
POWER BIPOLAR JUNCTION TRANSISTOR
AYW marking code IC
marking codes transistors sot-223
transistor bd 138
MMJT350T1
MMJT350T1G
T350
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Untitled
Abstract: No abstract text available
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus = 300 Vdc @ IC
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MMJT350T1
OT-223
MMJT350T1/D
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Untitled
Abstract: No abstract text available
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE
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MMJT350T1
OT-223
MMJT350T1/D
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AYW marking code IC
Abstract: BFr pnp transistor MMJT350T1G T350 306 marking code transistor
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MMJT350T1G
OT-223
MMJT350T1/D
AYW marking code IC
BFr pnp transistor
MMJT350T1G
T350
306 marking code transistor
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Untitled
Abstract: No abstract text available
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage
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MMJT350T1G
AEC-Q101
OT-223
MMJT350T1/D
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T350 sot223
Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR
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MMJT350T1
OT-223
MMJT350T1/D
T350 sot223
AYW marking code IC
t350
MMJT350T1
MMJT350T1G
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MMJT
Abstract: No abstract text available
Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MMJT350T1G,
SMMJT350T1G
MMJT350T1/D
MMJT
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Untitled
Abstract: No abstract text available
Text: BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com
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BD136G,
BD138G,
BD140G
BD136G
BD138G
BD136/D
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Untitled
Abstract: No abstract text available
Text: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and
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MUN5111T1/D
SC-70/SOT-323
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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diac D30
Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED
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OT-23
C-120,
conventN1711
2N1893
2N2102
2N2218A
2N2219A
2N3019
2N3503
2N3700
diac D30
db3 diac
bc 9013
marking 4d NPN
ZN 5551 diode
DIAC DB3 EQUIVALENT
BZXS4C24V
8Z-2
9014 sot-23
ZT 5551
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transistor 536
Abstract: TRANSISTOR BD538 BD 534
Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Em itter Voltage S ym bol
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BD534/536/538
BD533,
BD535
BD537
BD536
BD538
transistor 536
TRANSISTOR BD538
BD 534
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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Untitled
Abstract: No abstract text available
Text: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re
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MAX650
250mA
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D242
Abstract: d242b
Text: BD242, BD242A, BD242B, BD242C File Number 672 Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For P o w er-A m p lifier and H igh-Speed-Switching A pplications Features: • 40 W at 25°C case temperature ■ 5-A rated collector current ■ Min. f T of 3 MHz at 10 V. 500 mA
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BD242,
BD242A,
BD242B,
BD242C
BD241,
BD241A,
BD241B,
BD241C
BD242C
BD242-series
D242
d242b
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