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    BD SERIES OF PNP TRANSISTOR Search Results

    BD SERIES OF PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD SERIES OF PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor bd 292

    Abstract: BD240C 20mH 1A power transistor bd
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers


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    PDF O-220 25deg C-120 transistor bd 292 BD240C 20mH 1A power transistor bd

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 BD180

    bd136g

    Abstract: bd140 bd series of pnp transistor BD136 BD140 pnp transistor bd 142 transistor
    Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


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    PDF BD136, BD138, BD140 BD136 BD138 BD140 bd136g bd series of pnp transistor BD140 pnp transistor bd 142 transistor

    to225aa

    Abstract: TO-225AA pin diagram BD140 Power Transistors TO-225aa Case to.225aa 225AA to225aa case 77 BD136 BD136G BD138G
    Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available*


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    PDF BD136, BD138, BD140 BD136 BD138 to225aa TO-225AA pin diagram BD140 Power Transistors TO-225aa Case to.225aa 225AA to225aa case 77 BD136 BD136G BD138G

    transistor BD 736

    Abstract: TRANSISTOR bd 737
    Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC


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    PDF MMJT350T1 OT-223 transistor BD 736 TRANSISTOR bd 737

    BD140 application circuits circuits

    Abstract: bd140 pin out TO-225AA BD 140 transistor BD 139 140 BD136G BD136-D BD136 pin transistor bd 138 power transistor audio amplifier 500 watts
    Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


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    PDF BD136, BD138, BD140 BD136 BD138 BD136/D BD140 application circuits circuits bd140 pin out TO-225AA BD 140 transistor BD 139 140 BD136G BD136-D BD136 pin transistor bd 138 power transistor audio amplifier 500 watts

    BD136

    Abstract: BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G
    Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


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    PDF BD136, BD138, BD140 BD136 BD138 O-225 BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G

    pin diagram BD140

    Abstract: bd140 pin out bd136g transistor BD140 BD136 pin BD 139 140 BD136 BD140 application circuits circuits bd136 N
    Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


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    PDF BD136, BD138, BD140 BD136/D pin diagram BD140 bd140 pin out bd136g transistor BD140 BD136 pin BD 139 140 BD136 BD140 application circuits circuits bd136 N

    transistor bd 370

    Abstract: 30240 MMJT350T1
    Text: ON Semiconductort MMJT350T1 Bipolar Power Transistors PNP Silicon 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring


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    PDF MMJT350T1 r14525 MMJT350T1/D transistor bd 370 30240 MMJT350T1

    POWER BIPOLAR JUNCTION TRANSISTOR

    Abstract: AYW marking code IC marking codes transistors sot-223 transistor bd 138 MMJT350T1 MMJT350T1G T350
    Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE


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    PDF MMJT350T1 OT-223 T350G MMJT350T1/D POWER BIPOLAR JUNCTION TRANSISTOR AYW marking code IC marking codes transistors sot-223 transistor bd 138 MMJT350T1 MMJT350T1G T350

    Untitled

    Abstract: No abstract text available
    Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus = 300 Vdc @ IC


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    PDF MMJT350T1 OT-223 MMJT350T1/D

    Untitled

    Abstract: No abstract text available
    Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE


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    PDF MMJT350T1 OT-223 MMJT350T1/D

    AYW marking code IC

    Abstract: BFr pnp transistor MMJT350T1G T350 306 marking code transistor
    Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −


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    PDF MMJT350T1G OT-223 MMJT350T1/D AYW marking code IC BFr pnp transistor MMJT350T1G T350 306 marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage


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    PDF MMJT350T1G AEC-Q101 OT-223 MMJT350T1/D

    T350 sot223

    Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G
    Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR


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    PDF MMJT350T1 OT-223 MMJT350T1/D T350 sot223 AYW marking code IC t350 MMJT350T1 MMJT350T1G

    MMJT

    Abstract: No abstract text available
    Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −


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    PDF MMJT350T1G, SMMJT350T1G MMJT350T1/D MMJT

    Untitled

    Abstract: No abstract text available
    Text: BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com


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    PDF BD136G, BD138G, BD140G BD136G BD138G BD136/D

    Untitled

    Abstract: No abstract text available
    Text: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and


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    PDF MUN5111T1/D SC-70/SOT-323 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


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    PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    transistor 536

    Abstract: TRANSISTOR BD538 BD 534
    Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Em itter Voltage S ym bol


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    PDF BD534/536/538 BD533, BD535 BD537 BD536 BD538 transistor 536 TRANSISTOR BD538 BD 534

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re­


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    PDF MAX650 250mA

    D242

    Abstract: d242b
    Text: BD242, BD242A, BD242B, BD242C File Number 672 Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For P o w er-A m p lifier and H igh-Speed-Switching A pplications Features: • 40 W at 25°C case temperature ■ 5-A rated collector current ■ Min. f T of 3 MHz at 10 V. 500 mA


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    PDF BD242, BD242A, BD242B, BD242C BD241, BD241A, BD241B, BD241C BD242C BD242-series D242 d242b