BD135 EQUIVALENT Search Results

BD135 EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description
TMP89FH46LDUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D
TMP89FM46DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D
TMP89FS60UG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50D
TMP89FH46DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D
TMP89FM46ADUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

BD135 EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary	PDF
BD135 CURVES Abstract: BD140 application circuits circuits BD139 BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140 Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed	Original	BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140	PDF
BD139 Abstract: BD139-10 bd140-10 Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed	Original	BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10	PDF
bd135 equivalent Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features	OCR Scan	TP3069 TP3069 bd135 equivalent motorola rf device NF 935 bd135 input impedance transistor tp3069	PDF
bd135 equivalent Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR Contextual Info: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold	OCR Scan	b3b7254 TP3062 TP3062 bd135 equivalent irt 840 1509-50 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR	PDF
bd135 equivalent Abstract: bd135 input impedance rBE BD135 resistor 2,2 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including	OCR Scan	TP3062 TP3062 bd135 equivalent bd135 input impedance rBE BD135 resistor 2,2	PDF
transistor bd135 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	TP3032 TP3032 BD135 transistor bd135	PDF
equivalent transistor K 2767 Abstract: transistor K 2767 bd135 equivalent transistor bd135 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3019S The RF Line UHF Power Transistor The TP3019S is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, the device has been specifically designed for use in analog and digital GSM systems.	OCR Scan	TP3019S TP3019S equivalent transistor K 2767 transistor K 2767 bd135 equivalent transistor bd135	PDF
si diode 1N4007 Abstract: motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 TP3064 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor The TP3064 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The	OCR Scan	TP3064 si diode 1N4007 motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007	PDF
bd135 equivalent Abstract: transistor bd135 motorola 1N4148 microstrip resistor microstrip line Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3021 is designed for 24 V com mon em itter base station amplifiers. Operating in the 8 2 0 -9 6 0 MHz bandwidth, it has been specifically designed for use in analog and digital GSM system s as a medium power output device.	OCR Scan	TP3021 BD135 bd135 equivalent transistor bd135 motorola 1N4148 microstrip resistor microstrip line	PDF
1206 transistor Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •	OCR Scan	MRF6406 1206 transistor chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent	PDF
bd135 equivalent Abstract: VARIABLE capacitor Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line UHF P o w er T ransistor The TP3012 is designed fo r 900 MHz m o b ile stations in b oth analog and d ig ita l a p p li cations. It in co rp o rates high value e m itte r ballast resistors, gold m e ta llizatio n s and offers	OCR Scan	TP3012 TP3012 1N4148 bd135 equivalent VARIABLE capacitor	PDF
TP5040 Abstract: ATC100A4R7DP50 100A120D ATC100A470JP50 ATC100A101 ATC100A470 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5040 The RF Line UH F P o w e r T ra n sisto r 40 W — 380 to 512 M Hz UHF POWER TRANSISTOR NPN SILICON . . . designed for 24 Volt UHF large-signal common emitter am plifier applications in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency	OCR Scan	TP5040 0A470JP50 ATC100A4R7DP50 100A5R6DP50 ATC100A150DP50 100A120DP50 ATC100A101KP50 1N4007 BD135 TP5040 100A120D ATC100A470JP50 ATC100A101 ATC100A470	PDF
CHIP DIODE m7 Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li	OCR Scan	b3b72S4 TP3012 Contin48 T-33-07 CHIP DIODE m7 D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf	PDF

Philips Application Note ECO6907 Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177 Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as	Original		PDF
Motorola transistor 9410 Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR Contextual Info: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics	Original	TP3032/D TP3032 TP3032 TP3032/D* Motorola transistor 9410 91 c6 bd135 equivalent icer capacitor motorola 1N4148 1N4148 BD135 NT 407 F TRANSISTOR	PDF
TANTAL C-16 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPM4040 Th e RF Line UHF Power Transistor T h e TPM 4040 is an in tern ally m atched tra n sisto r in a push-pull p ackage sp e cially d esig ned for m ulti-octave bandw id th high g ain and p ow er ap plica tio n s. Its internal	OCR Scan	TPM4040 1N4007 BD135 TANTAL C-16	PDF
SU 179 transistor Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
transistor fn 155 Abstract: motorola rf device transistors equivalent 0912 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF15060 MRF15060S RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	IS22I MRF15060 MRF15060S transistor fn 155 motorola rf device transistors equivalent 0912	PDF
Contextual Info: MOTOROLA Order this document by TP3021/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820 – 960 MHz bandwidth, it has been specifically designed for	Original	TP3021/D TP3021 TP3021 MCM145100/D*	PDF
pont de diode Abstract: TP3064 MOTOROLA TRANSISTOR 935 1N4007 BD135 motorola rf Power Transistor transistor j4 ss 88 Motorola 1N4007 Contextual Info: Order th is data sheet by TP3064/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3064 The RF Line RF Power Transistor The TP3064 is designed for960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations	OCR Scan	TP3064/D TP3064 TP3064 2PHX33580Q-0 TP3064/D pont de diode MOTOROLA TRANSISTOR 935 1N4007 BD135 motorola rf Power Transistor transistor j4 ss 88 Motorola 1N4007	PDF
5Bp smd Abstract: smd transistor 8g 1N4148 ATC100A BD135 CS-12 MRF6406 CASE-319 bd135 equivalent Transistor t 2 smd motorola Contextual Info: Order this data sheet by MRF6406/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an	OCR Scan	MRF6406/D MRF6406 MRF6406 2PHX33607Q-0 MRF6406/D 5Bp smd smd transistor 8g 1N4148 ATC100A BD135 CS-12 CASE-319 bd135 equivalent Transistor t 2 smd motorola	PDF
bd135 equivalent Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006	PDF
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3	PDF

BD135 EQUIVALENT Search Results

BD135 EQUIVALENT Result Highlights (5)

BD135 EQUIVALENT Datasheets Context Search

bd135 TRANSISTOR REPLACEMENT GUIDE

BD135 CURVES

BD139

bd135 equivalent

bd135 equivalent

bd135 equivalent

transistor bd135

equivalent transistor K 2767

si diode 1N4007

bd135 equivalent

1206 transistor

bd135 equivalent

TP5040

CHIP DIODE m7

Philips Application Note ECO6907

Motorola transistor 9410

TANTAL C-16

SU 179 transistor

transistor fn 155

pont de diode

5Bp smd

bd135 equivalent

bd136 equivalent