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    BD938 Search Results

    BD938 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD938 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BD938 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD938 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD938 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD938 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD938 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD938 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD938 Unknown Cross Reference Datasheet Scan PDF
    BD938 Unknown Transistor Replacements Scan PDF
    BD938F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD938F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD938F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD938 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Power LSI series for Digital Camera and Digital Video Camera 7ch Integrated FET System Switching Regulator + 1ch LDO BD9381GUL ●Function block diagram ●Outline 7-channel Switching Regulator Controller for Digital Camera that contains an internal FET, 1-Channel LDO and 1-Channel


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    PDF BD9381GUL

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Power LSI series for Digital Camera and Digital Video Camera 7ch Integrated FET System Switching Regulator + 1ch LDO BD9381GUL ●Function block diagram ●Outline 7-channel Switching Regulator Controller for Digital Camera that contains an internal FET, 1-Channel LDO and 1-Channel


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    PDF BD9381GUL

    transistor C9012

    Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
    Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.


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    PDF GTV1000 AN98051 GTV1000 TDA884X C9029 220uF C6004 transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    B0938

    Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
    Text: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.


    OCR Scan
    PDF BD934F; BD936F BD938F; BD940F BD942F BD933F, BD935F, BD937F, BD939F B0941F. B0938 B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F

    BD938

    Abstract: BD934 BD942 B0938 TI 936 BD934 transistor BD933 003452b
    Text: BD934; 936 BD938; 940 BD942 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. N-P-N complements are BD933; 935; 937; 939 and 941.


    OCR Scan
    PDF BD934; BD938; BD942 BD933; BD934 bb53T31 7Z82165 BD938 BD934 BD942 B0938 TI 936 BD934 transistor BD933 003452b

    B0938

    Abstract: BD938 942CO z82178 B0934 BD933 BD934 BD942 BD934 philips
    Text: BD934; 936 BD938; 940 BD942 PHILIPS INTERNATIONAL SbE D m 711002b DCm3[]5a TDD • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T -3 3 -n P-N-P silicon transistors in a plastic envelope intended fo r use in output stages of audio and television am plifier circuits where high peak powers can occur.


    OCR Scan
    PDF BD934; BD938; BD942 711002b 043DSfl T-33-n BD933; BD934 B0938 BD938 942CO z82178 B0934 BD933 BD942 BD934 philips

    Untitled

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan
    PDF BD934F; BD936F BD938F; BO940F BD942F S0T186 BD933F, BD935F, BD937F, BD939F

    Untitled

    Abstract: No abstract text available
    Text: BD934; 936 BD938; 940 BD942 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur.


    OCR Scan
    PDF BD934; BD938; BD942 BD933; BD934 003452b DQ34S27

    936F

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BD940F BD942F PHILIPS INTERNATIONAL SbE D • 7110ÔEL 0 D 4 3 0 b 4 SGM « P H I N “ SILICON EPITAXIAL POWER TRANSISTORS T -5 J - PNP Silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan
    PDF BD934F; BD936F BD938F; BD940F BD942F OT186 BD933F, BD935F, BD937F, BD939F 936F

    BD936F

    Abstract: BD938F 942F BD933F BD934F BD935F BD937F BD939F BD940F BD941F
    Text: I _ PHILIPS INTERNATIONAL 5bE D BD934F; BD936F BD938F; BD940F BD942F_ 711002b 00430bH SOM M P H I N m SILICON EPITAXIAL POWER TRANSISTORS T -3 3 - 7 PNP silicon power transistor in a SOT186 envelope w ith an electrically insulated mounting base,


    OCR Scan
    PDF BD934F; BD936F BD938F; BD940F BD942F OT186 BD933F, BD935F, BD937F, BD939F BD936F BD938F 942F BD933F BD934F BD935F BD937F BD940F BD941F

    D934

    Abstract: Z8.2 bd938
    Text: BD934; 936 BD938; 940 BD942 PH IL IP S INTERNATIONAL SbE D • 7110fl2b 0G43GSfl TDD « P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television am plifier circuits where high peak powers can occur.


    OCR Scan
    PDF BD934; BD938; BD942 7110fl2b 0G43GSfl BD933; T-33-19 D934 Z8.2 bd938

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100


    OCR Scan
    PDF fll331fl? GG0G043 BD746 BD750 BD751 BD797 BD798 BD799 T0220

    Untitled

    Abstract: No abstract text available
    Text: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan
    PDF BD933F; BD935F BD937F; BD939F BD941F BD934F, BD936F, BD938F, BD940F BD942F.