BD948F Search Results

946f

Contextual Info: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.

947f

Contextual Info: BD943F; BD945F BD947F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 94SF 947F

Contextual Info: BD944F;946F BD948F J V SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F. QUICK REFERENCE DATA BD944F BD946F BD948F

BD947F

Abstract: BD948F BD943F BD944F BD946F 948F
Contextual Info: BD944F; 946F BD948F PHILIPS INTERNAT IO NAL SbE D • 7110fl2b 0043CHB 17T « P H I N T - 7 ? *f SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.

946f

Abstract: BD944F 948F BD947F BD943F BD946F BD948F
Contextual Info: BD944F; 946F BD948F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F. QUICK REFERENCE DATA BD944F BD946F BD948F

2222C

Abstract: BD944 945F
Contextual Info: BD943F; BD945F BD947F PHILIPS INT ER NATIONAL 5fc,E ] • 711D02b D O ^ O T A fiTT M P H I N T -S l'O l SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F.

BD947F

Abstract: BD943F BD943 BD944F BD945F BD948F
Contextual Info: BD943F; BD945F BD947F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S0T186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 948F 947F

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

IDA1012

Abstract: 2SA10120 IDA1307 2SA12440 bd94 SOLITRON
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 - 10 >= 5 A, SDT3716 SDT3752 SDT3752 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 SDT3703 ~~H~~~ 15 20 SDT3712 SDT3715 SDT3715 SDT3715 SDT3775 SDT3775 SDT3775 SDT3305 ~gH~g~ 25 30 SDT3325 SDT3325 SDT3325 MJE2010

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI