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    BD949 Search Results

    BD949 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD949 Continental Device India TO-220 Plastic Package Original PDF
    BD949 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BD949 Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
    BD949 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD949 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD949 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD949 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD949 Unknown Transistor Replacements Scan PDF
    BD949 Unknown Transistor Replacements Scan PDF
    BD949 Unknown Cross Reference Datasheet Scan PDF
    BD949 Unknown Transistor Replacements Scan PDF
    BD949 Unknown Transistor Replacements Scan PDF
    BD949 Unknown Transistor Replacements Scan PDF
    BD949 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD949 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD949 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD949F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD949F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD949F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD949 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD951

    Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956


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    PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD949 BD950 BD952 BD953 BD954 BD955 BD956

    BD949

    Abstract: npn 2a
    Text: Inchange Semiconductor Product Specification BD949 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN


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    PDF BD949 O-220C BD949 npn 2a

    BD949

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BD949 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION


    Original
    PDF BD949 O-220C BD949

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original
    PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956

    mx 2sb834

    Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
    Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO


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    PDF O-220 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 mx 2sb834 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073

    BD951

    Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original
    PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD952 BD949 BD950 BD953 BD954 BD955 BD956

    BD954F

    Abstract: ic 812 TRANSISTOR S 812 954F BD950F BD952F BD956F bd94 812W BD95
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION •DC Current Gain: hFE= 40 Min @ IC= -500mA ·Complement to Type BD949F/951F/953F/955F APPLICATIONS ·Designed for power amplifier and switching applications


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    PDF BD950F/952F/954F/956F -500mA BD949F/951F/953F/955F BD950F BD956F BD952F BD954F BD954F ic 812 TRANSISTOR S 812 954F BD950F BD952F BD956F bd94 812W BD95

    Untitled

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90


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    PDF BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956

    Untitled

    Abstract: No abstract text available
    Text: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.


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    PDF BD950; BD954; O-220 BD949; BD950 BD950 BD952. BD054

    951F

    Abstract: No abstract text available
    Text: BD949F; BD951F ^BD953F; BD955F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 950F, BD 952F, BD 9 5 4 F and BD 956F. Q U IC K R E F E R E N C E D A T A


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    PDF BD949F; BD951F BD953F; BD955F bb53T31 951F

    bd955

    Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60


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    PDF BD949F; BD951F BD953F; BD955F BD950F, BD952F, BD954F BD956F. BD949F bd955 BD953F bd950 BD950F BD952F BD955F BD956F

    HU09

    Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.


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    PDF BD949F; BD951F BD953F; BD955F 7110fl2b 004310b OT186 BD950F, BD952F, BD954F HU09 bd955 BD953F BD949F BD950F BD952F BD955F BD956F

    bd955

    Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
    Text: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


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    PDF BD950F 004311b OT186 BD949F, BD951F, BD953F BD955F. BD950F bd955 BD955F 952F BD949F BD951F BD954F

    b0951

    Abstract: bu508at b0949 BD243B BD243C BD949 BD951 BD953 BD955 BU406
    Text: TO-220 Power Package Transistors NPN . Electrical Characteristic« (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. t Pd (W) (V) Min Tc=25°c (A) 80 5 65 100 100 5 BD949 60 60 BD951 80 BD953 'coo (HA) Max *Ve a Min Max fc» (A) « 'c (mA)


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    PDF O-220 BD243B BD243C BD949 BD951 BD953 BD955 BU406 BUV46 CD3968 b0951 bu508at b0949

    bd950

    Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
    Text: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


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    PDF BD950; BD954; T0-220 BD949; BD950J O-22cturer BD950 Z82145 7Z82142 80954 b0952 B0950 BD949 BD954 USA060-1

    b0951

    Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
    Text: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


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    PDF BD949; BD953; O-220 BD950; BD949 BD951 BD953 BD955 O-220. 7Z82141 b0951 b0949 B0950 LL90 BD950 BD955 IEC134

    BD954

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER


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    PDF BD949, BD950, BD951, BD953, BD955 BD952, BD954, BD956 BD954

    BD953

    Abstract: No abstract text available
    Text: BD949; 951 BD953; 955 y v . SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and for switching applications.


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    PDF BD949; BD953; O-220 BD950; BD949 BD951 BD953 BD955 BD949/951. BD953/955.

    FT501

    Abstract: No abstract text available
    Text: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.


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    PDF BD949; BD953; 711002b BD950; BD949 BD951 BD953 7110fl2b FT501

    bd950

    Abstract: b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D m 711002b 0Cm310fl 3bb « P H I N 7 ^ 3 3 -/ ? SILICON EPITAXIAL B A SE POW ER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a w ide range o f power am plifiers and fo r switching applications.


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    PDF BD950; BD954; 711002b 0Cm310fl T-33-lf T0-220 BD949; BD950 b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60

    952F

    Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F
    Text: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage


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    PDF BD950F; BD954F; OT186 BD949F, BD951F, BD953F BD955F. BD950FJ OT186. BD950F 952F bd955 BD949F BD951F BD954F BD955F 956F 954F

    N3BB

    Abstract: D952
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D • 711002b 004310Ô 3bb ■ P H I N T-33- n SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 9 5 1 ; 9 5 3 and 9 5 5 they are intended fo r use in a w ide range of power amplifiers and fo r switching applications.


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    PDF BD950; BD954; 711002b BD949; BD950i T--33--19 N3BB D952

    B0952

    Abstract: b0951 BD951 BD954 b0949 B0950 bd955 npn transistors,pnp transistors BD949 BD950
    Text: CDU BD949, 951, 953, 955 BD950, 952, 954, 956 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R


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    PDF BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 B0952 b0951 BD951 BD954 b0949 B0950 npn transistors,pnp transistors BD949 BD950

    Untitled

    Abstract: No abstract text available
    Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


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    PDF BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO