BDY91 Search Results

Contextual Info: rZ 7 SGS-THOMSON ^ 7 # IMæmi@¥l lî!]0 gt BDY90 BDY91 HIGH CURRENT NPN SILICON TRANSISTOR . BDY90 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY90 and BDY91 are silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching

Contextual Info: BDY90 BDY91 BDY92 bb53T31 0020037 2 N AHER PHILIPS/DISCRETE J 25E D r - 3 3 - a SILIC O N D IFFU SED PO W ER T R A N SIST O R S High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, switching regulators and switching control amplifiers.

Contextual Info: <^7V , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY91 Silicon NPN Power Transistor DESCRIPTION • High DC Current Gain: h FE =30-120@l c =5A • Excellent Safe Operating Area • High Current Capability

BDY92

Abstract: BDY91 BDY90 9946 BDV91 IEC134 TO3 philips
Contextual Info: N A M E R {3 ^ 5 3 1 3 1 P H I L I P S / D Q 2 I S Q C 3 7 Q R E T BDY90 BDY91 BDY92 2 5 E 5 E J D y T - 3 3 -ÍH SILICON DIFFUSED POWER TRANSISTORS High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, • switching regulators and switching control amplifiers.

BDY92

Contextual Info: r Z Z SGS-THOMSON ^ 7# 5 BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS D E S C R IP T IO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appli­ cations in military and industrial equipment.

Contextual Info: _ • 7*^ 537 ODEflMfl? 3 ■ . H 7 3 3 - U _ SGS-THOMSON ij^O g^(ô [liL[l(gïï[Hj lj«a©i_ BDY90/1/2 SG S-THOMSON 3QE » HIGH CURRENT, HIGH SPEED TRANSISTORS DESCRIPTIO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal

BDY92

Abstract: 1117 ADC Gain bandwidth BDY90 BDY90 BDY91
Contextual Info: 01 3875081 G E S OL ID DE 1 3fl7S0fll 0G17S71 3 STATE Pro Electron Pow er Transistors .— 0 IE 17571' D T~ 2?~f - » 6DY90, BDY91, BDY92

Transistor B

Abstract: bdy91
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY91 DESCRIPTION •High DC Current Gain: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability APPLICATIONS ·Designed for use in switching-control amplifiers, power

BDY91

Contextual Info: BDY91 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BDY90

Abstract: BDY91 P003N
Contextual Info: BDY90 BDY91 HIGH CURRENT NPN SILICON TRANSISTOR n BDY90 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY90 and BDY91 are silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial

Contextual Info: " P - 3 3 BDY90, BDY91, BDY92 HA RR IS S E M I C O N D S E C T O R — I I File Num ber SbE D High-Speed Silicon N-P-N Planar Transistors 1289 M 3 D 2 27 1 D G M G 7 1 0 21b • H A S TERMINAL DESIGNATIONS Devices for Switching and Amplifier Circuits in Industrial and Commercial

BDY90

Contextual Info: BDY90, BDY91, BDY92 F ile N u m b e r High-Speed Silicon N-P-N Planar Transistors 1289 TERM INAL DESIGNATIONS Devices fo r S w itchin g and A m plifier C ircuits in Industrial and C o m m erc ial A p p licatio n s Features: 92CS-27516 • M a x im u m o p e r a tin g a re a c u rv e s

Contextual Info: BDY91 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BDY91 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

buw34

Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0

BDY90

Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15

BDW52

Abstract: BDY90 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDW52A BDW52B
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. *C (A) NPN PNP Pd (W) MAX BVc b O BV c e O @lc hFE *TYP v CE(SAT) @ lc *r *TYP (A) (A) (MHZ) (V) (V) MIN MIN MIN MAX 8.0 20 . 5.0 15 15 00 MIN MAX 2N6674 15 175 350 300 2N6675 15 175 450 400 8.0 20 . 5.0