BFP196 Search Results

BFP196

Abstract: VPS05178
Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

BFP196T

Abstract: BFP196TR BFP196TW
Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

Contextual Info: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz

BFP196W

Contextual Info: BFP196W NPN Silicon RF Transistor 3
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA
Power amplifier for DECT and PCN systems 2
fT = 7.5 GHz 1 VPS05605

MARKING w96

Contextual Info: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications For low noise, low distortion broadband amplifiers in

Contextual Info: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

BFP196

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFP196W NPN Silicon RF Transistor 3
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA
Power amplifier for DECT and PCN systems 2
fT = 7.5 GHz 1 VPS05605

Contextual Info: BFP196 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)580m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

029998

Abstract: BFP196W BGA420 38128
Contextual Info: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

BFP196W

Abstract: BGA420
Contextual Info: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

Contextual Info: BFP196W Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz

bfp196

Contextual Info: BFP196 Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz

Contextual Info: BFP196W NPN Silicon RF Transistor 3
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA
Power amplifier for DECT and PCN systems 2
fT = 7.5 GHz 1 VPS05605

CM 1241 siemens

Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
Contextual Info: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz

BFP196TW

Contextual Info: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power

Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

BFP181R

Contextual Info: BFP196R NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz