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    BFP620 APPLICATIONS NOTE Search Results

    BFP620 APPLICATIONS NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    BFP620 APPLICATIONS NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking R2s

    Abstract: germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK
    Text: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 OT343 transistor marking R2s germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK

    BFP620

    Abstract: BFP620 acs BFP620 applications note GFT45
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		PDF BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45

    BFP620 applications note

    Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
    Text: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm


    Original     		PDF BFP620 BFP620 lowMay-2000 LQP10A LQG10A 05-Oct-2000 AN060 BFP620 applications note BFP540 AN057 BCR400R BCR400W MS10 MS11 MS12

    BFP620 acs

    Abstract: BFP620 s parameters 4ghz
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz

    BFP620

    Abstract: BGA420 T-25 KF 25 transistor AF 2596
    Text: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 OT343 BFP620 BGA420 T-25 KF 25 transistor AF 2596

    BFP620 applications note

    Abstract: BFP620 BFP620 r2s gummel AN077 BFP620 spice infineon AN077 BGA420 GMA marking RF Power Transistor spice
    Text: BFP620 NPN Silicon Germanium RF Transistor • Highly linear low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Based on Infineon's reliable high volume SiGe:C technology • Ideal for CDMA and WLAN applications


    Original     		PDF BFP620 BFP620 applications note BFP620 BFP620 r2s gummel AN077 BFP620 spice infineon AN077 BGA420 GMA marking RF Power Transistor spice

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor • Highly linear low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Based on Infineon's reliable high volume SiGe:C technology • Ideal for CDMA and WLAN applications


    Original     		PDF BFP620

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 Aug-11-2004

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343

    transitor RF 98

    Abstract: BFP620 applications note germanium transistor ac 128 BFP620
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 Apr-21-2004 transitor RF 98 BFP620 applications note germanium transistor ac 128 BFP620

    BFP620

    Abstract: T-25
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 BFP620 T-25

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		PDF BFP620 VPS05605 OT343 Dec-19-2002

    Untitled

    Abstract: No abstract text available
    Text: BFP620 Low Noise SiGe:C Bipolar RF Transistor • Highly linear low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Based on Infineon's reliable high volume Silicon Germanium technology • Ideal for CDMA and WLAN applications


    Original     		PDF BFP620

    deviation sheet

    Abstract: No abstract text available
    Text: BFP620 Deviation Sheet E6327 vs. E7764 NPN Silicon Germanium RF Transistor 3  High gain low noise RF transistor 4  Provides outstanding performance for a wide range of wireless applications  Ideal for CDMA and WLAN applications 2  Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF E6327 E7764 BFP620 VPS05605 E7764 E6327 Aug-01-2002 deviation sheet

    BFP620 applications note

    Abstract: AN057 BFP620 TRANSISTOR 37518 AN060 BCR400R BCR400W BFP540 LQG10A MS11
    Text: A pp l ic a t io n N o t e, R e v . 3. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 6 0 A H i g h T h i r d- O r d e r I nt e r c e pt L o w N o i s e A m p l i f i e r f o r 1 9 0 0 M H z A p pl i c a t i o n U s i n g t h e S i l i c o n Germanium BFP620 Transistor


    Original     		PDF BFP620 TECHN-01-09 AN060 AN060 BFT620 BFP620 applications note AN057 TRANSISTOR 37518 BCR400R BCR400W BFP540 LQG10A MS11

    AT 2313

    Abstract: BFP640 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 0 T h e S i G e B F P 6 4 0 a s a 2 .4 G H z L o w N o i s e Amplifier LNA R F & P r o t e c ti o n D e v i c e s Edition 2007-11-07 Published by Infineon Technologies AG


    Original     		PDF BFP640 AT 2313 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram

    BFP620 applications note

    Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
    Text: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The


    Original     		PDF BFP640 BFP620, BFP620. OT-343 BFP620 applications note 28428 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz

    BFP620F

    Abstract: BFP640 schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 8 2 A L o w - C o s t, T w o - S t a g e L o w N o i s e A m p l i fi e r f o r 5 - 6 GHz Applications Using the SiliconGermanium BFP640 Transistor R F & P r o t e c ti o n D e v i c e s


    Original     		PDF BFP640 BFP620F schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon

    Untitled

    Abstract: No abstract text available
    Text: Product Brief BGA619 High IP3 SiGe LNA Designed fo r 1 .9 G H z A pp l i ca t i o ns T h e B G A 6 1 9 i s a S i l i c o n - G e r m a n i u m SiGe low noise amplifier (LNA) designed for PCS CDMA2000 applications from 1.93 to 1.99GHz. Based on Infineon's B7HF technology the IC


    Original     		PDF BGA619 CDMA2000 99GHz. BGA619. B132-H8413-X-X7600

    BFP540

    Abstract: BFR380F Transistor BFP540 BFP620 applications note AN057 AN060 AN075 BFP620 BFR340F BFR360F
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 7 5 H i g h T h i r d- O r d e r I n p u t I n te r c e p t P o i n t C D M A 8 0 0 Low Noise Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08


    Original     		PDF

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    transistor C4

    Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
    Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;


    Original     		PDF BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier

    k 513

    Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
    Text: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF AN179 BFP620 BFP640F AN182 k 513 MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586