BFX2 Search Results

BFY41

Abstract: BFY33 BFX68 BFY46 bsv82 BFY67 bfx74a BFY64 BFX29 BFX30
Contextual Info: Medium Power Amplifiers and Switches P O L A R IT Y BFX2 9 B FX3 0 BFX3 5 BFX3 8 BFX3 9 P P P P P TO-39 TO-39 TO-18 TO-39 TO-39 600 600 360 800 800 0.6 0.6 _ 1 1 60 65 40 55 55 50 50 80 85 40 BFX4 0 BFX41 BFX6 8 BFX6 9 BFX 6 9 A P P N N N TO-39 TO-39 TO-39

BFX29

Abstract: DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2
Contextual Info: N AMER PHILIPS/DISCRETE m bbSB^l 0G2772Ô 70Û b^E D BFX29 A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A - v CB0 max. Collector-emitter voltage open base

BFX29

Abstract: bfx29 transistor
Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

Contextual Info: <££ml-Condu.eioi ZPioduati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFX29 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR APPLICATIONS • General Purpose Industrial Applications

Contextual Info: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg

BFX29

Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)

transistor 2TH

Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)

BFX29

Contextual Info: BFX29 J \ _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP tran sisto r in a TO -39 m etal package fo r general in d u stria l applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r - v CB0 max. C o lle c to r-e m itte r voltage (open base)

Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)

bfx29

Abstract: bfx29 transistor
Contextual Info: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg

bfx29 transistor

Abstract: BFX29
Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)

BFX29

Abstract: bfx29 transistor 1N916 IEC134 ScansUX894
Contextual Info: BFX29 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. QUICK REFERENCE DATA Collector-base voltage open emitter - v CBO max. 60 V Collector-emitter voltage (open base) -V c E O

Contextual Info: BFX21 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition)

BFX40

Abstract: BC304 BFX29 BC303-6 BC304-4 BC304-5 BC304-6 BFX30 BFX38 BFX41
Contextual Info: Maximum Ratings Vebo Po W (V) Min Tc=25°c JSi Type No. Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) C<* 'c \ $ ) @ (mA (MHz) (PR Max Min Max Typ Min Typ 'c t(off) (mA) (ns) Max Max ^C80 (V) Min ^ceo (V) Min 8C303-6 85 60 7 0.85 0.5

BFR 450

Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95

bc657

Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Contextual Info: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)

bss17

Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN

A142

Abstract: A143 A144 A145 ba- T 5623 068PA 57206
Contextual Info: Half-pitch and Multi-function Two Piece Connector FX2 Series Stacking connection Stack height: 12~16mm 12mm~16mm Horizontal Connection Vertical Connection 25mm •Features 1. Various connection with various product line 2. Easy One-Touch Operation The ribbon cable connection type allows easy one-touch operation

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

57210

Abstract: JIS2809
Contextual Info: Plug-in Connector for DISK Unit Connection FX2M3 Series •Features 1. Plug-in Connector Equipped with Power contact The total number of contacts contains 128 contacts, of which 120 contacts belong to the half pitch signal contacts, and the remained 8 contacts are used for the power contact. The