BFX29 TRANSISTOR Search Results

BFX29 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

BFX29 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)	Original	BFX29	PDF
bfx29 transistor Abstract: BFX29 Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)	Original	BFX29 600mA bfx29 transistor BFX29	PDF
bfx29 transistor Abstract: BFX29 Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)	Original	BFX29 600mA bfx29 transistor BFX29	PDF
bfx29 Abstract: bfx29 transistor Contextual Info: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg	Original	BFX29 600mA 600mW O-205AD) bfx29 bfx29 transistor	PDF
BFX29 Abstract: bfx29 transistor 1N916 IEC134 ScansUX894 Contextual Info: BFX29 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. QUICK REFERENCE DATA Collector-base voltage open emitter - v CBO max. 60 V Collector-emitter voltage (open base) -V c E O	OCR Scan	BFX29 BFX29 bfx29 transistor 1N916 IEC134 ScansUX894	PDF
Contextual Info: <££ml-Condu.eioi ZPioduati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFX29 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR APPLICATIONS • General Purpose Industrial Applications	Original	BFX29 600mA 150mA 100MHz	PDF
Contextual Info: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg	Original	BFX29 600mA 600mW 34mW/Â O-205AD)	PDF
transistor 2TH Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)	OCR Scan	BFX29 bb53T31 02773A 7Z22S09 bb53131 7ZZ2917 7Z22916 transistor 2TH	PDF
BFX29 Abstract: DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2 Contextual Info: N AMER PHILIPS/DISCRETE m bbSB^l 0G2772Ô 70Û b^E D BFX29 A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A - v CB0 max. Collector-emitter voltage open base	OCR Scan	0G2772Ã BFX29 BFX29 DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2	PDF
T2721 Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1 Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter	OCR Scan	BFX29 T2721 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1	PDF
BFX29 Contextual Info: BFX29 J \ _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP tran sisto r in a TO -39 m etal package fo r general in d u stria l applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r - v CB0 max. C o lle c to r-e m itte r voltage (open base)	OCR Scan	BFX29 200ns BFX29	PDF
BFX29 Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)	Original	BFX29 150mA BFX29	PDF
BFX29 Abstract: bfx29 transistor Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )	Original	BFX29 150mA 100MHz BFX29 bfx29 transistor	PDF
BC140 equivalent Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18	OCR Scan	BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent	PDF

Contextual Info: TO-39 Meta4-Can Package Transistors PNP Electrical C ha ra cte ristics (Ta=25"C, U n le ss O therw ise Specified) Maximum Ratings Type No. CBO (V) Min CEO (V) Min EBO (V) Min Pd (W) (A) (A) *ceo ^CB b s ^C£ (MA) @ (V) (HA) Max 8 (V ) Max Tc=25”c hFE	OCR Scan	BC303-6 BC304 BC304-4 BC304-5 BC304-6 BFX29 BFX38 BFX40 BFX41 BFX87	PDF
2n2906 Abstract: bfx29 transistor 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29 Contextual Info: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector	OCR Scan	T0-18 2N4036 2N2102 BFX30 2N2904 2N2218 BSV15 2N2905 2N2219 2N2906 bfx29 transistor 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29	PDF
Contextual Info: SbE D ^ 7 0 5 7 0 Q Q O b ' m Tfifl • Z E T B T -JT I-Q l ■ PNP SWITCHING ZETEX SEMICONDUCTORS TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices show n in this table are characterised for medium and high speed switching applications	OCR Scan	BSV17 ZT189 2N4036 BFX30 2N2222 2N2218 2N2907 ZT181 ZT182 BCY78	PDF
bc327 smd Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd Contextual Info: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A	OCR Scan	BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd	PDF
BFX36 Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59 Contextual Info: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE	OCR Scan	G0G0451 25min 10/30m BFT53 10min BFT54 30min BFT57 BFX36 110H BFX81 BFY64 BFY84 BFT58 BFT59	PDF
ME0412 Abstract: ME0413 V405A BC153 me0411 BC126 2sc 1091 BC154 bc143 ME0404-2 Contextual Info: M icro - Electronics Sem iconductors PN P Transistors P N P General Purpose Transistors REFERENCE TA B LE o o >> V EBO V min. max. BC153 BC154 40 40 5 5 50 160 _ BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 Code ME0411 ME0412 ME0413 6 6 5 45 45	OCR Scan	BC153 19495X BC154 19496H BCY70 19505E BCY71 195MC BCY72 1950SX ME0412 ME0413 V405A me0411 BC126 2sc 1091 bc143 ME0404-2	PDF
BC140 equivalent Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB	OCR Scan	2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent	PDF
2N2219 transistor Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29 Contextual Info: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector	OCR Scan	T0-18 2N4036 2N2102 BFX30 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N2219 transistor BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29	PDF
bcy59 equivalent Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22 Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943	OCR Scan	2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22	PDF
bc140 Abstract: 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices sh ow n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	2N2904 2N2218 BSV15 2N2905 2N2219 2N2906 2N2221 2N2907 2N2222 ZT181 bc140 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89	PDF

BFX29 TRANSISTOR Search Results

BFX29 TRANSISTOR Result Highlights (5)

BFX29 TRANSISTOR Datasheets Context Search

bfx29 transistor

bfx29 transistor

bfx29

BFX29

transistor 2TH

BFX29

T2721

BFX29

BFX29

BFX29

BC140 equivalent

2n2906

bc327 smd

BFX36

ME0412

BC140 equivalent

2N2219 transistor

bcy59 equivalent

bc140