BFX3 Search Results

BU606D

Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440

2N5415

Contextual Info: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421

BFX40

Abstract: BFX39 BFX41 BFX38
Contextual Info: BFX38 BFX39 BFX40 BFX41 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) APPLICATIONS 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) • General Purpose Industrial Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR BFX34 TO-39 NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max

BFY41

Abstract: BFY33 BFX68 BFY46 bsv82 BFY67 bfx74a BFY64 BFX29 BFX30
Contextual Info: Medium Power Amplifiers and Switches P O L A R IT Y BFX2 9 B FX3 0 BFX3 5 BFX3 8 BFX3 9 P P P P P TO-39 TO-39 TO-18 TO-39 TO-39 600 600 360 800 800 0.6 0.6 _ 1 1 60 65 40 55 55 50 50 80 85 40 BFX4 0 BFX41 BFX6 8 BFX6 9 BFX 6 9 A P P N N N TO-39 TO-39 TO-39

BFX37

Contextual Info: BFX37 SILICON PLANAR PNP LOW-LEVEL, LOW-NOISE AMPLIFIER T he B F X 3 7 is a silico n p la n a r e p ita x ia l PNP tra n sisto r in Jedec T O -1 8 m eta l case, designed fo r use in high p e rfo rm a n ce , lo w -le v e l, lo w -n o is e a m p lifie rs over a w id e fre q u e n cy range. It

BFX34

Contextual Info: BFX34 SILICON PLANAR NPN HIGH-CURRENT, GENERAL PURPOSE TRANSISTOR T he B F X 3 4 is a silico n p la n ar e p ita xia l NPN tra n s is to r in Jedec T O -3 9 m etal case, intended fo r high c u rre n t app lica tio n s. V e ry lo w sa tu ra tio n voltage and high speed at high c u rre n t levels m ake it ideal fo r p o w e r

BFX34SMD05

Contextual Info: BFX34SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High

BFX38 MOTOROLA

Abstract: bfx38 BFX40
Contextual Info: M O T O RO LA SC XSTRS/R F 12E D | t,3fc.?254 QOÛbMôO M | M A X I M U M R A T IN G S S ym bol BFX38 BFX40 U n it C o lle ctor-E m itter Voltage VCEO 55 75 Vdc Collector-Base Voltage VcBO 55 75 Vdc Em itter-Base Voltage Vebo 5.0 Vdc C o lle ctor C urrent — Continuous

BFX34

Contextual Info: BFX34 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it deal for power drivers,

BFX34

Abstract: DSASW003743
Contextual Info: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at

Contextual Info: <£e.mi-C.on.d\ju}ko\ TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX30 FEATURES PINNING • High current (max.600 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter base APPLICATIONS 2 3 collector, connected to case

BFX34

Abstract: TO-39 CASE
Contextual Info: DATA SHEET BFX34 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX34 is a silicon NPN transistor designed for switching and general purpose applications where a high collector current 5.0 AMPS is required. MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Contextual Info: HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • Silicon Epitaxial NPN Transistor • High Speed, Low Saturation Switch • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO

Contextual Info: BFX30 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

BFX30

Contextual Info: BFX30 PNP SILICON TRANSISTOR U tS C JK lK I IIÎIN 7 T>T V '> A U ! A j y Î 5 CASE MIIl/UU ~ : i : - r íNr TYN.TT» transistors designed _ iXlLlUllLlVi cîppilUcîtlOIlb. iU l TO-39 plEfiHf X U 0 U iU íll and switching C E B A D C A T TTT1? A/f A VTA/I I TfV/T O

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

transistor to-39

Contextual Info: Philips Semiconductors Product specification NPN switching transistor BFX34 FEATURES PINNING • High current max. 2 A PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 em itter 2 base 3 collector, connected to case • High-current switching, e.g. inverters and switching

bfx34

Contextual Info: BFX34 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at

2N2063A

Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

BFX30

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor BFX30

BFX37

Contextual Info: BFX37 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

BFX36

Contextual Info: BFX36 SILICON PLANAR PNP D U A L H IG H -G A IN , LOW-NOISE AM PLIFIER The BFX 36 is a six terminal device containing two isolated high-gain, low-noise, silicon planar epitaxial PNP transistors in Jedec TO-77 metal case. They are designed for use in high performance amplifier and differential amplifier circuits from 1 /UA up to 100 mA.