BGA 78 TRAY Search Results

Kostat tray

Abstract: KS-8308 CAMTEX Kostat DAEWON tray 48 DAEWON tray drawing JEDEC Kostat CERAMIC PIN GRID ARRAY CPGA AMD daewon D-12G-56LD-A13
Contextual Info: u Chapter 7 Trays CHAPTER 7 TRAYS Introduction Design and Materials Device Count per Tray and Box Tray Suppliers per Package Type Tray Dimensions Packages and Packing Publication Revision A 3/1/03 7-1 u Chapter 7 Trays INTRODUCTION Trays are used instead of tubes to protect higher

smd transistor mark E13

Abstract: Modified Coffin-Manson Equation Calculations senju solder paste m10 f12 A10D10 P6K6 BGA reflow guide Senju metal flux T5 k5m6 K793 T4V4
Contextual Info: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015B Third Edition – September 2000 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

samsung ddr3 ram MTBF

Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Contextual Info: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

PCB design for very fine pitch csp package

Abstract: Senju 179GHH 37K-1 B12-246 Modified Coffin-Manson Equation Calculations Senju metal solder paste 160 e7 Semicon volume 1 SSYZ015A
Contextual Info: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015A Second Edition – September 1999 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

IS43LR32640

Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and

K9HDG08U1A

Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Contextual Info: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

Contextual Info: IDT - Integrated Device Technology - QSpan II > CA91L862A > CA91L862A-50ILV Integrated Device Technology Products | Applications Processor Products | Search | EHB Embedded Host Bridges Support QSpan II™ Page 1 of 2 The Analog and Digital Company ™

Contextual Info: IDT - Integrated Device Technology - QSpan II > CA91L862A > CA91L862A-50IEV Integrated Device Technology Products | Applications Processor Products | Search | EHB Embedded Host Bridges Support QSpan II™ Page 1 of 2 The Analog and Digital Company ™

AN1780

Contextual Info: STR71xF ARM7TDMI 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces Features • ■ ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory

ARM str71

Abstract: STR71 smartcard mlt 22 mlt225571 ARM7TDMI Technical Reference Manual STR710FZ2 STR711FR1 ISO7816-3 LFBGA144 LFBGA64
Contextual Info: STR71xF ARM7TDMI 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces Features • ■ ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1512 Microcontroller DATA SH E E T DS - LM 3S 1512 -1 2 7 4 6 .2 5 1 5 S P M S 018H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

NATIONAL SEMICONDUCTOR MARKING TYPE

Abstract: SEMICONDUCTOR PACKAGING ASSEMBLY TECHNOLOGY national semiconductor packaging QFP PACKAGE thermal resistance Thermal Considerations for Surface Mount Packages national semiconductor databook
Contextual Info: Introduction Thank you for selecting National Semiconductor products. National Semiconductor’s products find wide use in applications ranging from the latest personal computers to lightweight portable consumer products. As next generation electronic systems require higher levels of performance, device

Contextual Info: 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V3576S IDT71V3578S The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data,

Contextual Info: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •

676 BGA package tray

Contextual Info: Search by Part Number Search Site by k eyword Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Military | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > PCI Express Switches > I/O Expansion Switches > 89HPES24T3G2 > 89HPES24T3G2ZBBR8

PES24T3G2

Contextual Info: Search by Part Number Search Site by k eyword Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Military | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > PCI Express Switches > I/O Expansion Switches > 89HPES24T3G2 > 89HPES24T3G2ZBALG8

Contextual Info: Search by Part Number Search Site by k eyword Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Military | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > PCI Express Switches > I/O Expansion Switches > 89HPES24T3G2 > 89HPES24T3G2ZBBR

Contextual Info: N18S1825P1 2 A N18S1833P1(2)A N18S3625P1(2)A N18S3633P1(2)A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs Features • • •

LTM4600

Contextual Info: LTM4600 10A High Efficiency DC/DC µModule Features n n n n n n n n n n n n n n Description Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current

N18N3625P1AQ-20C

Contextual Info: N18N1825P1A N18N1833P1A N18N3625P1A N18N3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs with Fast bus Turnaround FTRAMTM Architecture

X1880

Abstract: N18N1825F1AG N18N3625F1AQ-13C
Contextual Info: N18N1825F1A N18N1833F1A N18N3625F1A N18N3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture

Contextual Info: LTM4600HV 10A, 28VIN High Efficiency DC/DC µModule Features n n n n n n n n n n n Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 28V 10A DC, 12A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current 0.6V to 5V Output Voltage

SSDPAPS0004G1

Abstract: HBM 00-07H intel nand flash pf29f32 SSDPAPS0002G1 317505-003US ssd schematic 16GB Nand flash dual channel intel nand flash memory PF29
Contextual Info: Intel Z-P140 PATA Solid State Drive SSDPAPS0002G1, SSDPAPS0004G1 Product Manual Product Features „ „ „ „ „ „ Capacities — 2 GB extensible to 4 GB using Intel SD54B NAND Flash Memory components — 4 GB (extensible to 16 GB using Intel SD58B NAND Flash Memory components)