BGA84 Search Results

BGA84

Abstract: 74HC573 74HC573 DATASHEET DIP-40
Contextual Info: AE-B84-SP3 Page 1 of 2 AE-B84-SP3 DIP40/BGA84 specialized adapter for FLASH memory. Device package dimensions: 11.6 x 8.0 x 1.0 mm, 0.8 mm pitch. Click the programmer model below to get an appropriate list of the devices supported by the adapter: z z ChipProg-40

BGA84

Abstract: 74HC573 BGA-84 diode b84 DIP-40 bga 84
Contextual Info: AE-B84-SP1 Page 1 of 2 AE-B84-SP1 DIP40/BGA84 specialized adapter for FLASH memory. Device package dimensions: 11.6 x 8.0 x 1.2 mm, 0.8 mm pitch. Click the programmer model below to get an appropriate list of the devices supported by the adapter: z z z ChipProg+

Contextual Info: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z

M14D1G166

Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
Contextual Info: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

ene kb3926qf c0

Abstract: ene kb3926qf kb3926 ene kb3926qf d2 kb3926qf d2 kb3926qf c0 IDT92HD RT8206B AT5231 OZ8119
Contextual Info: 1 2 3 4 5 7 8 Jones/Cujo BLOCK DIAGRAM PCB STACK UP 8L Dis. LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN2 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : SGND1

ene kb3926qf

Abstract: ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231
Contextual Info: 1 2 3 4 5 7 8 01 UT7D BLOCK DIAGRAM PCB STACK UP 8L CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /45W PAGE 3,4 LAYER 3 : IN1 CLK_CPU_BCLK,CLK_CPU_BCLK# LAYER 4 : SVCC CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# DREFCLK,DREFCLK#

kb3926

Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2

msi G31 crb

Abstract: sc413 2pc501 nvidia nb8 vga board APL5912 MS-1636 nvidia BGA OZ711SP1-1 10n400 Socket AM2
Contextual Info: A B C D E MS-1636 VER : 1.0 +3V , +5V TPI51120 DC JACK & Selector Merom Page 3,4 Page 40 1 2 3 1 +VTT 1.05V 01:BLOCK DIAGRAM 02:PLATFORM 03:Merom-1 CPU (HOST BUS) 04:Merom-2 CPU (POWER/GND) 05:i965PM-1 (HOST) CRT 06:i965PM-2 (DMI/VGA) RGB 07:i965PM-3 (DDR2)

kb3926

Abstract: RTM875T-606 RTM875 G3-64 820p fcbga G966-25 cntr cd1 100 1p0 Quanta AT3 at3 block diagram KB3920 KB3926 AT5 C833
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 3 04-06-08-12-F- 4 0402 footprint 0603 footprint 0805 footprint 1206 footprint 1% tolerance 5 6 7 8 AT3 BLOCK DIAGRAM CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 01 14.318MHz A PAG 5 LAYER 4 : IN2 478P uPGA /35W

SSOP-90

Abstract: MBM29PL3200BE MBM29PL3200TE fbga84
Contextual Info: 1 : 352'8&76 0%03/7(%(  • • • 32 M-Bit Page Mode Flash Memory with x16/x32-Bit Bus Width: MBM29PL3200TE/BE • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •

M14D5121632A

Contextual Info: ESMT M14D5121632A 2K DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

BGA676

Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Contextual Info: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18

EM44BM1684LBA

Abstract: bga 84 BGA84 BGA-84 DDR2-667 em44bm1684lba-3f
Contextual Info: eorex EM44BM1684LBA 512Mb 8Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks

Contextual Info: ESMT Preliminary M14D5121632A (2K) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

Contextual Info: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

M14D5121632A

Abstract: M14D512
Contextual Info: ESMT Preliminary M14D5121632A (2T) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

Contextual Info: ESM T M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

20890

Abstract: MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

DDR2-667

Abstract: EM44AM1684LBC EM44AM1684LBC-37F EM44AM1684LBC-3F EM44AM1684LBC-5F BGA84
Contextual Info: eorex EM44AM1684LBC 256Mb 4Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks

Contextual Info: ESMT M14D5121632A 2H DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z Internal pipelined double-data-rate architecture; two data access per clock cycle

TP33 APEM Push Button Cap

Abstract: CF SOP-6 RP50 D-Sub 44-pin pinout PZC10SAAN Tp33 Apem l8 DT26 smd female PCB connector 9pin d-sub PDIUSB11A LM2596S-ADJ
Contextual Info: MCF5275EVB User’s Manual Devices Supported: MCF5275 MCF5275L MCF5274 MCF5274L MCF5275EVBUM Rev. 1.0 10/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130

KB3920

Abstract: kb3926 mcp67m quanta at1 DQ15 Discrete Nvidia MCP67 kb3926 d3 GFX27M rtl8211b MCP67d
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2

20890

Abstract: MARKING HRA
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

DSA0024691

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-5E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each