BIPOLAR HG Search Results

2sc 1740 TRANSISTOR equivalent

Abstract: 40HFL60 IRGMC40F 480V1
Contextual Info: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

HP8341B

Abstract: HP4145 hp11612a 8970B TRANSISTOR noise figure measurements footprint transistor Plessey
Contextual Info: On Wafer Noise Measurement Using Bipolar Transistor RF Test Structures S.D. Connor Bipolar Characterization Group, Central R&D, G.E.C. Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here a technique for on wafer noise we measurements using bipolar R.F. cell structures. Measurements were taken

polysilicon resistor

Abstract: resistor 2,2
Contextual Info: HIGH-PERFORMANCE ANALOG FOUNDRY BIPOLAR HGC PROCESS HGC is a double-polysilicon trench isolated bipolar pro- Table 1 npn parameters 0.6 x 3.0 µm emitter cess optimised for RF applications in the range 900 MHz to 2.4 GHz. Key Parameters (minimum geometry device):

Bipolar HJ

Contextual Info: MITEL BIPOLAR TECHNOLOGY SUITE Mitel manufacture a range of high performance bipolar processes ranging from low cost diffused isolation processes to double-poly, trench isolated processes with fTs in the range 22 to 45GHz. HK* HJ HG WPC 45 30 22 7 BVCEO min

DS5229

Contextual Info: MITEL BIPOLAR HG PROCESS HG is a double-polysilicon trench isolated bipolar process optimised for RF application in the range 900MHz to 2.4GHz. NPN Cross Section Base Collector Emitter P+ P+ base DC epitaxy n- BN CS CS Substrate (p-) fT vs IC min geometry HG NPN

Contextual Info: MITEL BIPOLAR HG PROCESS HG is a double-polysilicon trench isolated bipolar process optimised for RF application in the range 900MHz to 2.4GHz. NPN Cross Section Base Collector Emitter P+ P+ base DC epitaxy n- BN CS CS Substrate (p-) fT vs IC min geometry HG NPN

G12N60B3

Abstract: HGTG12N60B3 HGTG12N60B3D LD26
Contextual Info: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60A4

Abstract: HGTG30N60A4
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60a4

Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60a4

Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
Contextual Info: HGTG30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60B3

Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
Contextual Info: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
Contextual Info: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60B3

Abstract: HGTG30N60B3 LD26 TA49170
Contextual Info: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

HGTG40N60B3 equivalent

Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G30N60

Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
Contextual Info: HGTG30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
Contextual Info: HGTG40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Contextual Info: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar