BPW UV PHOTODIODE Search Results

Contextual Info: BPW 20R VlSfrlAY Vishay Telefunken Silicon PN Photodiode Description BPW 20R is a planar Silicon PN photodiode in a hermetically sealed short TO -5 case, especially de­ signed for high precision linear applications. Due to its extremely high dark resistance, the short cir­

bpw uv photodiode

Abstract: BPW20 BPW20R
Contextual Info: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

near IR sensors with daylight filter

Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Contextual Info: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into

near IR sensors with daylight filter

Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Contextual Info: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

photodiode bpw 46

Abstract: T2-96
Contextual Info: Temic BPW46 S e iti i r o n ti u c n r s Silicon PIN Photodiode Description BPW 46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its w aterclear epoxy the device is sensitive to visible and infrared radiation.

SFH2030F

Abstract: SFH505A KOM2033A SFH2030 ha1900 SFH-2030F SFH200 SFH203
Contextual Info: Photodiodes Part Number Package Outline SFH205 SFH206 Package Type Plastic. daylight filter, solder tabs Plastic. dayligh t filter. solder tabs Dark Cur­ rent Half Angl« VB» 1 0V nA Photo­ sensitivity JUB50 mn 0.5mW/ cm2 nA Radiant Senat ive Area mm* Peak

BPW34 application note

Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
Contextual Info: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be

Measurement Techniques

Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
Contextual Info: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical

BPW34 application note

Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
Contextual Info: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical

near IR sensors with daylight filter

Abstract: light sensing circuit project BPW34 application note BPW20RF
Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

BPW46

Abstract: BPW34 osram
Contextual Info: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power

TRANSISTOR si 6822

Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
Contextual Info: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als

lg washing machine control circuit

Abstract: gp1uv701
Contextual Info: SHARP IR0 5 4 0 1 SPEC No. y ^ =2 5/ h g p 1 u v 7 0 q s 0 0 f -> y - x tfc ttlf Infrared Detecting unit for Remote'"Çôntroi QPllÌV70QS00F Series Specifications $n7 y “ pp Lead —Free Type * -?• #15 nBn * ^ * 7° h 7 s/< 4 ^ f I I 2 g ff * S ii §15

BPW41 circuit application

Abstract: OSRAM IR emitter
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability

BPW34 osram

Abstract: wi41g BPW34 application note
Contextual Info: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm

BPW34 smd

Abstract: smd resistor 8606 BPW34 application note
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

BPW34 application note

Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°

BPW34 application note

Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

BPW34 smd

Abstract: phototransistor application lux meter BPW20
Contextual Info: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75

lux meter chip

Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
Contextual Info: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability