2SC1913
Abstract: 2SA913
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA913 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·Complement to Type 2SC1913 APPLICATIONS ·Designed for AF high power dirver applications. n
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2SA913
-150V
2SC1913
-500mA;
-50mA
-150mA;
-100V
2SC1913
2SA913
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Audio Output Transistor Amplifier
Abstract: 2SA900 2SC1568
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS
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2SA900
2SC1568
-50mA
-50mA;
Audio Output Transistor Amplifier
2SA900
2SC1568
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2SA900
Abstract: 2SC1568
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS
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2SA900
2SC1568
-50mA
-50mA;
2SA900
2SC1568
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2SC1565
Abstract: 2SA795
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 DESCRIPTION •Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS
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2SA795
-150V
2SC1565
-300mA;
-30mA
-100V;
-150mA
-500mA
2SC1565
2SA795
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2SC1565
Abstract: 2Sc1565 transistor 2SA795 2SC156
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 DESCRIPTION •Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS
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2SA795
-150V
2SC1565
-300mA;
-30mA
-100V;
-150mA
-500mA
2SC1565
2Sc1565 transistor
2SA795
2SC156
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transistor 10mhz 60w
Abstract: 2SA1535 2SA1535A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS
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2SA1535/A
-150V
-2SA1535
-180V
-2SA1535A
2SC3944/A
2SA1535
2SA1535A
transistor 10mhz 60w
2SA1535
2SA1535A
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2SA1535A
Abstract: 2SA1535
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS
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2SA1535/A
-150V
-2SA1535
-180V
-2SA1535A
2SC3944/A
2SA1535
2SA1535A
2SA1535A
2SA1535
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2SA1110
Abstract: 2SC2590
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.
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2SA1110
-120V
2SC2590
-300mA;
-30mA
-150mA;
-500mA;
2SA1110
2SC2590
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2SA1112
Abstract: 2sc2592
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 APPLICATIONS ·Designed for audio frequency drivers and high power
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2SA1112
-180V
2SC2592
-500mA;
-50mA
-150mA;
2SA1112
2sc2592
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2SA1111
Abstract: 2SC2591
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 APPLICATIONS ·Designed for audio frequency drivers and high power
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2SA1111
-150V
2SC2591
-500mA;
-50mA
-150mA;
2SA1111
2SC2591
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Untitled
Abstract: No abstract text available
Text: Jei5.su , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1112 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-180V(Min) • Good Linearity of MFE
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2SA1112
-180V
2SC2592
O-220C
-100u
-500mA;
-50mA
-50rnA
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1111 DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-150V(Min) • Good Linearity of hFE • Complement to Type 2SC2591
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2SA1111
-150V
2SC2591
O-220C
-100u
-500mA;
-50mA
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2SC2482
Abstract: v 90150 transistor 2sc2482
Text: 2SC2482 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage 300 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SC2482
O-92MOD
30MHz
2SC2482
v 90150
transistor 2sc2482
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Untitled
Abstract: No abstract text available
Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA900 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-18V(Min) • Good Linearity of I>E • Low Collector Saturation Voltage
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2SA900
2SC1568
O-126
-50mA
-50mA;
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br 9015
Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
br 9015
pnp transistor 9015
transistor 9015 c
9015 pnp
BR 9014
transistor c 9015
9015 transistor
C 9015 transistor
transistor 9015
BR 9015 C
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BR 9015
Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
BR 9015
transistor 9015 c
transistor c 9015
BR 9015 C
pnp transistor 9015
transistors BR 9015
9015 pnp
transistor 9015
9015* Transistor
C 9015 transistor
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BR 9014
Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
BR 9014
BR 9014 transistor
BR 9015
BR 9014 c
transistors BR 9015
transistor 9014 NPN
9015 PNP
transistor 9015 c
transistor c 9015
TS 9015
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transistor c 9015
Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be
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100mA,
transistor c 9015
BR 9014
BR 9015
BR 9014 transistor
transistor 9015 c
9015 PNP
pnp transistor 9015
BR 9014 C TRANSISTOR
transistors BR 9015
9015 TO-92
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BR 9014
Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014
Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014
Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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8909K500
Abstract: 2-1520230-2 AL 250V
Text: 8 — 7 TVIIS BRÀWINÔ IS UNPUBLISHED- COPYRIGHT - RELEASED FOR PUBLICATION ns/ TV/rtA n OAODADATlrtfcl BY TYCO ELECTRONICS CORPORATION. - LOC . ALL RIGHTS RESERVED. AD DIST 00 REVISIONS LTR B DESCRIPTION DWN DATE WL HM
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EC0G3G-0178-02
27JUN02
8909K5
01AUG90
02AUG90
8909K27
8910K202
8910K165
8909K4
8909K500
2-1520230-2
AL 250V
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7402k4
Abstract: ECO-11-004587 7402K3 8909K5 8909K500
Text: 7 8 •mis BRÀWINÔ IS UNPUBLISHED COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. - AD DIST 00 REVISIONS LTR B1 DESCRIPTION DWN DATE APVD 21MAR11 RK HMR REVISED PER ECO -11-004587 D D 858 I I 781 B B 632 1,188 O MADE IN U.S.A. o 1,281 o Y ARAB
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ECO-11-004587
21MAR11
8909K5
01aug90
02aug90
8909K27
8910K202
8910K165
8909K4
7403K2
7402k4
ECO-11-004587
7402K3
8909K5
8909K500
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transistor 2sc2482
Abstract: No abstract text available
Text: MCC TO-92MOD Plastic-Encapsulate T ran sisto rs^ ^ ^ 2SC2482 TRANSISTOR NPN FEATURES P cm: 0.9 W (Tam b=25°C) IcM: 0.1 A M atage W ÈÉÈÉÈÊ é a m V(BR)CBO: . 300 v W j W Ü t t j g i ^ sto rag e Junction tem perature range Tj.Tstg: -55t: to + 150°C
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O-92MOD
2SC2482
lc--20
30MHz
transistor 2sc2482
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