BR V 610 Search Results

BCW91B

Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)

Contextual Info: IRF7307QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter V (BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage

pc2700r-25330-c0

Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Contextual Info: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

TAG 203 350

Abstract: tag thyristoren tag 665 100 BTX 25 800 TAG 12 665 600 tag 627 800 TAG 600 TAG 203 to48c tag 6 600
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

mje13009 equivalent

Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

Contextual Info: IRF7304QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

222ll

Abstract: 10LLS
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)

md5000a

Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max

SMP25N05-45L

Abstract: SMP25N05
Contextual Info: T em ic SMP25N05-45L Siliconix N-Channel Enhancement-Mode Ttansistor, Logic Level 175 °C Maximum Junction Temperature Product Summary r DS on (£2) I d (A ) 0.045 @ V GS = 10 V 25 0.060 @ V GS = 4.25 V 25 V(BR)DSS (V) 50 T0-220AB o Drain Connected to Tab

2SK1178

Abstract: FM20
Contextual Info: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V

222LL

Abstract: VN10LLS 10LLS VN0605T VN0610LL VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

10LLS

Abstract: VN0610LL 222ll VN10LLs VN2222LL VN0605T week code vishay SILICONIX
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

222LL

Abstract: VN10LLS 610LL VN2222LL vn2222ll vishay VN10LLs equivalent 10LLS VN0605T VN0610LL 70212
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

IR KBPC 608

Abstract: IR KBPC 606 kBPC 604
Contextual Info: KBPC 600 … KBPC 610 Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current Nennstrom 6A Alternating input voltage Eingangswechselspannung Plastic case Kunststoffgehäuse 35…700 V 15.2 x 15.2 x 6.3 [mm] Weight approx. Gewicht ca. 3.5 g

Contextual Info: KBPC 600 … KBPC 610 Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current – Nennstrom 6.0 A Alternating input voltage Eingangswechselspannung 35…700 V Plastic case Kunststoffgehäuse 15.2 x 15.2 x 6.3 [mm] Weight approx. – Gewicht ca.

Contextual Info: NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

y1010

Abstract: 1000S35 kbpc 600Y
Contextual Info: KBPC 600Y Y 610 Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current Nennstrom 6.0 A Alternating input voltage Eingangswechselspannung 35Y700 V Plastic case with Al-bottom 15.2 x 15.2 x 5.1 [mm] Kunststoffgehäuse mit Alu-Boden Weight approx.

369D

Abstract: NTD4805N mosfet K 2865
Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS

2SK1178

Abstract: FM20
Contextual Info: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±4.0 A I DSS A VTH 2.0 35 (Tc = 25ºC) W Re (yfs) 2.4 ±16 (Tch ID (pulse) PD 150ºC)

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4

Contextual Info: ESDA6V1-5T6 Transil arrays for ESD protection Features • 5 unidirectional Transil diodes ■ Breakdown voltage V br = 6.1 V min. ■ Low leakage current < 200 nA ■ Very small PCB area: 1.0 mm2 ■ 350 ^m pitch micro-package ■ Lead-free and RoHS package