BR21 Search Results

b57 diode

Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
Contextual Info: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES

Contextual Info: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

BR210S

Abstract: TA505 50J2 BR210
Contextual Info: N AMER PHILIPS/DI SCRE TE DbE D • bbS3TBl G011011 S ■ ~ Il BR210 SERIES y T - 2 S ' O G ~ BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in th e T 0 -2 2 0 A C o u tlin e , available in a + / —

Contextual Info: Philips Sem iconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current

D2HW-C201M

Abstract: D2HW-BR211DR d2hwc201m Hinge lever
Contextual Info: 1128-2012:QuarkCatalogTempNew 9/1/12 12:40 PM Page 1128 INTERCONNECT TEST & MEASUREMENT 12 Sealed Snap Action Switches Sealed Subminiature Snap Action Switch — D2HW Series D2HW-BR201DR D2HW-BR211DR ENCLOSURES POWER SWITCHES D2HW-BR231M Watertight Subminiature Snap

BR211-220

Abstract: BR211 equivalent RT-HE BR211 BR211-140 BR211-160 BR211-180 BR211-200 BR211-240 BR211-260
Contextual Info: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current

BR210-100

Contextual Info: Philips Components BR210 s e r ie s _ A_ Supersedes February 1988 data BREAKOVER DIODES A range o f glass-passivated b id ire c tio n a l breakover diodes in the TO -220 A C o u tlin e , available in a + /— 12% tolerance series o f nom inal breakover voltage. T h e ir c o n tro lle d breakover voltage and peak

BR216

Contextual Info: Philips Components br216 _ A _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR 216 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

DIODE T25 4 Jo

Abstract: DIODE T25 4 bo DIODE T25-4-bo
Contextual Info: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

Contextual Info: Lead Frame Types Lead Frame Type, Gull Wing Leads, Dome Top TCI Part No. TSLG-CR2522 TSLG-CR2122 TSLG-BR2522A4 TSLG-BR2122A4 TSLG-TR2522A4 TSLG-TR2122A4 TSLG-GR2522V TSLG-GR2122V TSLG-FR2522E2 TSLG-FR2122E2 TSLG-XR2522A2 TSLG-XR2122A2 TSLG-XR2522A3 TSLG-XR2122A3

Contextual Info: Lead Frame Types Lead Frame Type, Yoke Leads, Dome Top TCI Part No. TSLY-CR2522 TSLY-CR2122 TSLY-BR2522A4 TSLY-BR2122A4 TSLY-TR2522A4 TSLY-TR2122A4 TSLY-GR2220-H7040 TSLY-GR2220-H6800 TSLY-GR2522V TSLY-FR2522E2 TSLY-FR2122E2 TSLY-YR2220-H6405 TSLY-YR2220-H7019

BYV72-200

Abstract: BYQ28X-100 BYV72-100 BYV133-45 PBYR1540CT pbyr1540ctx BYV72-150 pbyr1035b byv118 PHILIPS BYV72-100
Contextual Info: Philips Semiconductors Power Diodes Type number BR211 series BYQ28-100 BYQ28-150 BYQ28-200 BYQ28E-100 BYQ28EB-100 BYQ28ED-100 BYQ28EX-100 BYQ28F-100 BYQ28X-100 BYQ28X-150 BYQ28X-200 BYV118-35 BYV118-40 BYV118-45 BYV118B-35 BYV118B-40 BYV118B-45 BYV118F-35

Contextual Info: BR213-260 Thyristors Dual Bidirectional Breakover Diode V BO Min. (V) V(BO) Max. (V)292 I(S) Max. (A)1.0 I(TRM) Max. (A)40 @ t(w) (s) (Test Condition)320u I(TSM) Max. (A)30 @ t(w) (s)10m V(R) Max. (V)228 I(H) Max. (A) Holding Current150m V(TM) Max. (V)2.5

Contextual Info: BR213-280 Thyristors Dual Bidirectional Breakover Diode V BO Min. (V) V(BO) Max. (V)314 I(S) Max. (A)1.0 I(TRM) Max. (A)40 @ t(w) (s) (Test Condition)320u I(TSM) Max. (A)30 @ t(w) (s)10m V(R) Max. (V)246 I(H) Max. (A) Holding Current150m V(TM) Max. (V)2.5

Contextual Info: BR211 SERIES DEVELOPMENT DATA T h is d a ta sheet co n ta in s advance in fo rm a tio n and s p e c ific a tio n s are su b je ct to change w it h o u t n o tic e . FOR DETAILED INFORMATION BEE THE LATEST ISSUE OF HANDBOOK SC02 OR DATA SHEET BREAKOVER DIODES

SUS CIRCUIT breakover device

Contextual Info: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

M3227

Abstract: M3071 m3240 BR216 diode JJ ptm1 FN1510
Contextual Info: PHILIPS INTER NA TIONAL SbE D 711Dö5ti DDM1D7M 37T • PHIN BR216 T-ll-23 DUAL ASYMMETRICAL BREAKOVER DIODE The B R 2 1 6 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

Contextual Info: 25E J> • bb 53 1 3 1 0 0 2 2 2 ^ 5 3 ■ DEVELOPMENT DATA BR213 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. J K N AMER PH ILI PS /D IS CR ET E T ^2S ^< D S - DUAL BREAKOVER DIODES A range of monolithic dual bidirectional breakover diodes w ith ±12% tolerance of breakover voltage.

BR211 equivalent

Contextual Info: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover

BYV72-200

Abstract: BYV72-100 transistor BYQ28E BYV72EW-200 pbyr1035b BYV72-150 BYV79E-100 BYQ28-200 BYQ28X-100 BYV133X-40
Contextual Info: DISCRETE SEMICONDUCTORS Replacement types Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes TYPE NUMBER REPLACEMENT TYPE Replacement types TYPE NUMBER REPLACEMENT TYPE TYPE NUMBER REPLACEMENT TYPE BR211 series NONE BYV143-45 PBYR2545CT BZW03 series

BYV42-200

Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Contextual Info: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400

Contextual Info: SbE D • 711QflSb D ü m O b D fläM D E V E L O P M E N T DATA - T - l l ~Z3 BR211 SERIES This data sheet contains advance Information and specifications are subject to change without notice. PHILIPS INTERNATIONAL IPHIN 5bE D MIN BREAKOVER DIODES

SM2F

Abstract: M2480 BR216
Contextual Info: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.

BR211

Abstract: BR211SM BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280
Contextual Info: Philips Semiconductors Preliminary specification Breakover diodes GENERAL DESCRIPTION BR211SM series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover