BREAKDOWN GATE OXIDE Search Results

451 MOSFET

Abstract: ECG463 transconductance mosfet ECG2388 ECG2384 Depletion MOSFET ecg 2385 power mosfet 500 A mosfet to3 mosfet 452
Contextual Info: Power MOSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Switch Drain to Gate to Continuous Gate to Transcon­ Source Source Drain Source Cutoff ductance Breakdown Breakdown Current Voltage Voltage Voltage gfs •d

2SK318

Contextual Info: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2SK318

Abstract: "beryllium oxide" 20DRAM
Contextual Info: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2SK317

Abstract: HF VHF power amplifier 2sk317 hitachi k317
Contextual Info: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

Power MOSFET Basics

Abstract: MOSFETs MOS-006 10-15V
Contextual Info: Source Gate Power MOSFET Basics N+ P-body Table of Contents 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. N- Epi Basic Device Structure Breakdown Voltage On-State Characteristics Capacitance Gate Charge Gate Resistance Turn-on and Turn-off Body Diode Forward Voltage

ecg mosfet

Abstract: ecg 222 451 MOSFET Depletion MOSFET ECG2382 ECG312 dual gate mosfet ecg 2385 Philips ECG ECG2380
Contextual Info: PHILIPS E C G INC SME D • bbS3^5fl 00071b7 bOO ■ ECÛ Pow er M OSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Sw itch Gate to Continuous Drain to Source Drain Transcon­ Source ductance Breakdown Breakdown Current

PHILIPS dual gate mosfets

Abstract: ecg mosfet ecg fet ecg jfet ecg463 ecg2383 Depletion
Contextual Info: PHILIPS E C G INC SME J> M bbSa^fi DD071b7 bGO « E C G Power MOSFETS ECG Type Description and Application ECG2392 M O S FET , N-Ch, ▲ Enhancement H i Speed S w itch Drain to Gate to Continuous Transcon­ Source Drain Source Breakdown Breakdown Current ductance

2N7000 021

Abstract: 25c021
Contextual Info: TELEDYNE COMPONENTS 3hE D fic117b02 00077^2 1 «TSC 'T Z S Z g WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSO LUTE MAXIMUM RATINGS _ _ . • High Gate Oxide Breakdown, ±40V min. ■ Low Output and Transfer Capacitances

2N7002U

Abstract: 2N7000 021
Contextual Info: WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSOLUTE MAXIMUM RATINGS Ta - +25°C unless otherwise noted (TO-92 Package) • High Gate Oxide Breakdown, +40V min. ■ Low Output and Transfer Capacitances ■ Extended Safe Operating Area

Contextual Info: MQ8 Memory HandHng Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due

Contextual Info: MOS Memory Handling Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due

Topaz Semiconductor

Abstract: TO226AA 2n7000 sseb 2N700 52BL
Contextual Info: TOPAZ SEMICONDUCTOR OSE D g TüôSSEb □□□QTflS G | “* SEMICONDUCTOR T-29-25 2N7000 N-CHANNEL ENHANCEMENT-MODE D-MOS POW m FETs ORDERING INFORMATION TO-226AA TO-92 Plastic Package 2N700Û Description 60V, 5 ohm FEATURES APPLICATIONS • High Gate Oxide Breakdown, +40V min.

cleanthrough

Contextual Info: E2G0008-17-41 O K I Semiconductor MOS Memory Handling Guideline MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due

stacked transistor shunt switch

Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Contextual Info: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor

Hitachi DSA002779

Abstract: 2SK410
Contextual Info: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry

2SK317

Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Contextual Info: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •

2SK317

Abstract: zenner 10v 2sk317 hitachi
Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

LTTG

Abstract: EM 257
Contextual Info: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

DIODE T25 4 EO

Abstract: DIODE T25 4 Jo 2SK410
Contextual Info: 44 T b 20 S 0ni3DSfl Û 42 2SK410 HIT4 H I T A C H I / i O P T O E L E C T R O N I C blE D SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER • FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.

pepi c

Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
Contextual Info: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN

10mhz mosfet

Abstract: an7244 conventional bipolar
Contextual Info: Harris Semiconductor No. AN7244.2 Harris Power MOSFETs September 1993 Understanding Power MOSFETs Author: Tom McNulty Power MOSFETs Metal Oxide Semiconductor, Field Effect Transistors differ from bipolar transistors in operating principles, specifications, and performance. In fact, the

HFS3N80

Abstract: hfs3n
Contextual Info: BVDSS = 800 V RDS on typ = 4.0 Ω HFS3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES  Originative New Design 11 2  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

HFU3N80

Contextual Info: BVDSS = 800 V RDS on typ = 4.0 Ω HFD3N80/HFU3N80 ID = 2.5 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD3N80  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU3N80 1.Gate 2. Drain 3. Source

hfh7n80

Contextual Info: BVDSS = 800 V RDS on typ = 1.55 Ω HFH7N80 ID = 7.0 A 800V N-Channel MOSFET TO-3P FEATURES  Originative New Design 1 2 3  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances