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    BREAKDOWN GATE OXIDE Search Results

    BREAKDOWN GATE OXIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BREAKDOWN GATE OXIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power MOSFET Basics

    Abstract: MOSFETs MOS-006 10-15V
    Text: Source Gate Power MOSFET Basics N+ P-body Table of Contents 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. N- Epi Basic Device Structure Breakdown Voltage On-State Characteristics Capacitance Gate Charge Gate Resistance Turn-on and Turn-off Body Diode Forward Voltage


    Original     		PDF 220oC, MOS-006] Power MOSFET Basics MOSFETs MOS-006 10-15V

    stacked transistor shunt switch

    Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
    Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor


    Original     		PDF

    2sk410

    Abstract: Hitachi DSA00382
    Text: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry


    Original     		PDF 2SK410 2sk410 Hitachi DSA00382

    Hitachi DSA002779

    Abstract: 2SK410
    Text: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry


    Original     		PDF 2SK410 D-85622 Hitachi DSA002779 2SK410

    pepi c

    Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
    Text: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN


    Original     		PDF V/100V/300V pepi c DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1

    10mhz mosfet

    Abstract: an7244 conventional bipolar
    Text: Harris Semiconductor No. AN7244.2 Harris Power MOSFETs September 1993 Understanding Power MOSFETs Author: Tom McNulty Power MOSFETs Metal Oxide Semiconductor, Field Effect Transistors differ from bipolar transistors in operating principles, specifications, and performance. In fact, the


    Original     		PDF AN7244 10MHz. 10mhz mosfet conventional bipolar

    HFS3N80

    Abstract: hfs3n
    Text: BVDSS = 800 V RDS on typ = 4.0 Ω HFS3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES  Originative New Design 11 2  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFS3N80 O-220F 47max 54typ HFS3N80 hfs3n

    HFU3N80

    Abstract: No abstract text available
    Text: BVDSS = 800 V RDS on typ = 4.0 Ω HFD3N80/HFU3N80 ID = 2.5 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD3N80  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU3N80 1.Gate 2. Drain 3. Source


    Original     		PDF HFD3N80/HFU3N80 HFD3N80 HFU3N80 O-252 O-251 HFU3N80

    hfh7n80

    Abstract: No abstract text available
    Text: BVDSS = 800 V RDS on typ = 1.55 Ω HFH7N80 ID = 7.0 A 800V N-Channel MOSFET TO-3P FEATURES  Originative New Design 1 2 3  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFH7N80 45typ hfh7n80

    451 MOSFET

    Abstract: ECG463 transconductance mosfet ECG2388 ECG2384 Depletion MOSFET ecg 2385 power mosfet 500 A mosfet to3 mosfet 452
    Text: Power MOSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Switch Drain to Gate to Continuous Gate to Transcon­ Source Source Drain Source Cutoff ductance Breakdown Breakdown Current Voltage Voltage Voltage gfs •d


    OCR Scan     		PDF ECG2392 ECG2386 451 MOSFET ECG463 transconductance mosfet ECG2388 ECG2384 Depletion MOSFET ecg 2385 power mosfet 500 A mosfet to3 mosfet 452

    2SK318

    Abstract: No abstract text available
    Text: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.


    OCR Scan     		PDF 0013D35 l75MH l75MHi; 2SK318

    2SK318

    Abstract: "beryllium oxide" 20DRAM
    Text: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.


    OCR Scan     		PDF 0013D35 l75MH 69inv l75MHi; 2SK318 "beryllium oxide" 20DRAM

    2SK317

    Abstract: HF VHF power amplifier 2sk317 hitachi k317
    Text: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.


    OCR Scan     		PDF 2SK317 100MHz; I75MH> 2SK317 HF VHF power amplifier 2sk317 hitachi k317

    ecg mosfet

    Abstract: ecg 222 451 MOSFET Depletion MOSFET ECG2382 ECG312 dual gate mosfet ecg 2385 Philips ECG ECG2380
    Text: PHILIPS E C G INC SME D • bbS3^5fl 00071b7 bOO ■ ECÛ Pow er M OSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Sw itch Gate to Continuous Drain to Source Drain Transcon­ Source ductance Breakdown Breakdown Current


    OCR Scan     		PDF 00071b7 ecg2392 ecg23s6 00D71tifl ecg mosfet ecg 222 451 MOSFET Depletion MOSFET ECG2382 ECG312 dual gate mosfet ecg 2385 Philips ECG ECG2380

    2N7000 021

    Abstract: 25c021
    Text: TELEDYNE COMPONENTS 3hE D fic117b02 00077^2 1 «TSC 'T Z S Z g WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSO LUTE MAXIMUM RATINGS _ _ . • High Gate Oxide Breakdown, ±40V min. ■ Low Output and Transfer Capacitances


    OCR Scan     		PDF 117b02 2N7000 2N7002 2N7000 021 25c021

    2N7002U

    Abstract: 2N7000 021
    Text: WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSOLUTE MAXIMUM RATINGS Ta - +25°C unless otherwise noted (TO-92 Package) • High Gate Oxide Breakdown, +40V min. ■ Low Output and Transfer Capacitances ■ Extended Safe Operating Area


    OCR Scan     		PDF 2N7000 2N7002 2N7002U 2N7000 021

    Untitled

    Abstract: No abstract text available
    Text: MQ8 Memory HandHng Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due


    OCR Scan     		PDF FRW-17

    Untitled

    Abstract: No abstract text available
    Text: MOS Memory Handling Guideline O K I Semiconductor MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due


    OCR Scan     		PDF

    Topaz Semiconductor

    Abstract: TO226AA 2n7000 sseb 2N700 52BL
    Text: TOPAZ SEMICONDUCTOR OSE D g TüôSSEb □□□QTflS G | “* SEMICONDUCTOR T-29-25 2N7000 N-CHANNEL ENHANCEMENT-MODE D-MOS POW m FETs ORDERING INFORMATION TO-226AA TO-92 Plastic Package 2N700Û Description 60V, 5 ohm FEATURES APPLICATIONS • High Gate Oxide Breakdown, +40V min.


    OCR Scan     		PDF T-29-25 O-226AA 2N700Ã 400mW 2N7000 Topaz Semiconductor TO226AA 2n7000 sseb 2N700 52BL

    cleanthrough

    Abstract: No abstract text available
    Text: E2G0008-17-41 O K I Semiconductor MOS Memory Handling Guideline MOS Memory Handling Guideline 1. Static Electricity Precautions The input impedance is generally high in MOS memories so that the voltage is controlled through the oxide film in a transition gate. This makes the insulation very susceptible to breakdown due


    OCR Scan     		PDF E2G0008-17-41 FRW-17 cleanthrough

    2SK317

    Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
    Text: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •


    OCR Scan     		PDF 2SK317 D013Q3M 2SK317 2sk317 hitachi J-D4A rfpak zenner 10v

    2SK317

    Abstract: zenner 10v 2sk317 hitachi
    Text: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.


    OCR Scan     		PDF 2SK317 D013Q3M zenner 10v 2sk317 hitachi

    LTTG

    Abstract: EM 257
    Text: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.


    OCR Scan     		PDF 2SK318-- 44Tb2G5 0D13D3L. LTTG EM 257

    DIODE T25 4 EO

    Abstract: DIODE T25 4 Jo 2SK410
    Text: 44 T b 20 S 0ni3DSfl Û 42 2SK410 HIT4 H I T A C H I / i O P T O E L E C T R O N I C blE D SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER • FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.


    OCR Scan     		PDF 2SK410 28MHz DIODE T25 4 EO DIODE T25 4 Jo 2SK410