BSC 031 N 06 NS 3 Search Results
BSC 031 N 06 NS 3 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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BSC031N06NS3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | 327.98KB | 9 | ||
BSC031N06NS3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A TDSON-8 | Original | 586.81KB |
BSC 031 N 06 NS 3 Price and Stock
Infineon Technologies AG BSC031N06NS3GATMA1MOSFET N-CH 60V 100A TDSON-8-1 |
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BSC031N06NS3GATMA1 | Digi-Reel | 6,126 | 1 |
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BSC031N06NS3GATMA1 | Reel | 5,000 | 14 Weeks | 5,000 |
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BSC031N06NS3GATMA1 | Reel | 5,000 |
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BSC031N06NS3GATMA1 | 8,000 |
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BSC031N06NS3GATMA1 | 6,745 | 1 |
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BSC031N06NS3GATMA1 | Cut Tape | 23,558 | 0 Weeks, 1 Days | 1 |
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BSC031N06NS3GATMA1 | 5,000 | 15 Weeks | 5,000 |
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BSC031N06NS3GATMA1 | 5,000 | 1 |
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BSC031N06NS3GATMA1 | 22,306 |
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BSC031N06NS3GATMA1 | 85,645 |
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Infineon Technologies AG BSC031N06NS3 GMOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3 |
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BSC031N06NS3 G | 3,809 |
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Infineon Technologies AG BSC031N06NS3GMOSFET Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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BSC031N06NS3G | 2,685 |
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BSC031N06NS3G | 90,071 |
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BSC 031 N 06 NS 3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ixgk32n60Contextual Info: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms |
OCR Scan |
32N60A 32N60AS T0-247 32N60AS) O-247 B2-65 ixgk32n60 | |
TSPC603R
Abstract: microprocessor LNM80 DH21
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TSPC603R PID7t-603e 32-bit SPECint95, SPECfp95 64-bit 0841C TSPC603R microprocessor LNM80 DH21 | |
32N50Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C |
OCR Scan |
32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50 | |
MX877
Abstract: IXYS cs
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MX877 MX877 400mA IXYS cs | |
Contextual Info: IXYS MX879 8-Channel, 60V Relay/Load Driver Open Drain Output, 3 Wire Interface Features: General Description • • • • • • • • The MX879 is an 8 channel high voltage switch with 8-bit parallel or serial input control. The MX879 connects directly to a microprocessor through a |
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MX879 MX879 120mA. 600mA 120mA | |
mx878Contextual Info: IXYS MX878 8-Channel, 60V Relay/Load Driver Open Drain Output, 3 Wire Interface Features: General Description • • • • • • • • The MX878 is an 8 channel high voltage switch with 8-bit parallel or serial input control. The MX878 connects directly to a microprocessor through a |
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MX878 MX878 200mA. 1000mA 200mA | |
30n60b
Abstract: B2045
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OCR Scan |
30N60B 30N60C 30n60b B2045 | |
MC74ACT138
Abstract: EIAJ-16 948F MC74AC138 MC74AC138D MC74AC138DR2 MC74AC138N MC74ACT138D MC74ACT138N
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MC74AC138, MC74ACT138 1-of-24 MC74AC138/74ACT138 1-of-32 ACT138 DIP-16 MC74ACT138 EIAJ-16 948F MC74AC138 MC74AC138D MC74AC138DR2 MC74AC138N MC74ACT138D MC74ACT138N | |
0828HContextual Info: PC755/745 PowerPC 755/745 RISC Microprocessor Datasheet Features • • • • • • • • • • • • • • • 18.1SPECint95, Estimates 12.3 SPECfp95 at 400 MHz PC755 15.7SPECint95, 9SPECfp95 at 350 MHz (PC745) 733 MIPS at 400 MHz (PC755) at 641 MIPS at 350 MHz (PC745) |
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PC755/745 1SPECint95, SPECfp95 PC755) 7SPECint95, 9SPECfp95 PC745) 64-bit 0828H | |
cga motorola
Abstract: PowerPC755 PC755B 2138F CBGA360 MPC7400 PC745 PC755 PCX755
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1SPECint95, SPECfp95 PC755) 7SPECint95, 9SPECfp95 PC745) 64-bit 32-bit cga motorola PowerPC755 PC755B 2138F CBGA360 MPC7400 PC745 PC755 PCX755 | |
2138F
Abstract: CBGA360 MPC7400 PC745 PC755 ATMEL 745 PCX755
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1SPECint95, SPECfp95 PC755) 7SPECint95, 9SPECfp95 PC745) 64-bit 32-bit 2138F CBGA360 MPC7400 PC745 PC755 ATMEL 745 PCX755 | |
cga motorola
Abstract: CBGA360 MPC7400 PC745 PC755 N-19 CI-CGA360 PowerPC755
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1SPECint95, SPECfp95 PC755) 7SPECint95, 9SPECfp95 PC745) 64-bit 32-bit cga motorola CBGA360 MPC7400 PC745 PC755 N-19 CI-CGA360 PowerPC755 | |
1ZI1
Abstract: pk100-1 PK1001
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OCR Scan |
IDT71F432 100-pin IDT71F432 MO-136, 2S771 1ZI1 pk100-1 PK1001 | |
Ali 3601
Abstract: WF128K32NA-70HQ5 QML-38534 F128K32N k3212 5962-9471602HSA k329 5962-9471604H8C
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OCR Scan |
T0047DÃ T0047GÃ Ali 3601 WF128K32NA-70HQ5 QML-38534 F128K32N k3212 5962-9471602HSA k329 5962-9471604H8C | |
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demultiplexer 1 to 4 outputs HFContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L o w -V o ltag e Q uiet CMOS 1 -o f-8 D ecoder/D em ultiplexer M C74LVQ 138 LVQ The MC74LVQ138 is a high performance, 1-of-8 decoder/ demultiplexer operating from a 2.7 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers |
OCR Scan |
MC74LVQ138 LVQ138 MC74LVQ138/D demultiplexer 1 to 4 outputs HF | |
Contextual Info: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C |
OCR Scan |
38N60U1 O-247 B2-85 | |
Contextual Info: ISSI IS41LV32256 256K x 32 8-Mbit EDO DYNAMIC RAM 3.3V, 100/83/66 MHz ADVANCE INFORMATION APRIL 1998 FEATURES DESCRIPTION • 262,144-word by 32-bit organization The I S S I IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals |
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IS41LV32256 144-word 32-bit IS41LV32256 32-bit 512-cycle 5M-1982. PK13197TÃ QGQGS55 | |
Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C |
OCR Scan |
IXFH40N30Q IXFT40N30Q O-268 | |
Mosfet K 135 To3
Abstract: a 1712 mosfet 11P50 ixtm11p50
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OCR Scan |
IXTH11P50 IXTM11P50 IXTH11Pit5 IXTM11P45 IXTH11P50, IXTM11P50, 50-500V, 00esn0tincluoe Mosfet K 135 To3 a 1712 mosfet 11P50 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 3 -to -8 Line Decoder M C74LVX138 W ith 5V -T o leran t Inputs The MC74LVX138 is an advanced high speed CMOS 3 -to -8 line decoder. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems. |
OCR Scan |
MC74LVX138 C74LVX138 C74LVX138/D | |
IXGH32N60C
Abstract: 610MJ
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OCR Scan |
IXGH32N60C IXGH32N60CS O-247 32N60CS) O-247AD O-247 610MJ | |
IXLH35N140AContextual Info: ÖIXYS High Voltage, High speed IGBT IXLH 35N140 A V CES = 1400 V ^C25 = 58 A = 3.6 V vCE sat Short Circuit SOA Capability P re lim in a ry d a ta ) °\^ *S OE Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 1400 V V CGR Td = 25°C to 150°C; RGE = 1 M£2 |
OCR Scan |
35N140 O-247 IXLH35N140A | |
MC74ACT138Contextual Info: MC74AC138, MC74ACT138 1−of−8 Decoder/Demultiplexer T h e M C 7 4 A C 1 3 8 / 7 4 A C T 1 3 8 i s a h i g h−sp e e d 1 −o f −8 decoder/demultiplexer. This device is ideally suited for high−speed bipolar memory chip select address decoding. The multiple input enables allow parallel expansion to a 1−of−24 |
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MC74AC138, MC74ACT138 MC74AC138/74ACT138 ACT138 MC74AC138/D MC74ACT138 | |
5 to 32 decoder
Abstract: 5 to 32 decoder circuit MC74ACT138 32 line to 5 decoder Decoder 5 to 32 948F MC74AC138 MC74AC138D MC74AC138DR2 MC74AC138N
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MC74AC138, MC74ACT138 1-of-24 MC74AC138/74ACT138 1-of-32 ACT138 DIP-16 MC74AC138/D 5 to 32 decoder 5 to 32 decoder circuit MC74ACT138 32 line to 5 decoder Decoder 5 to 32 948F MC74AC138 MC74AC138D MC74AC138DR2 MC74AC138N |