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    BSW67 Search Results

    BSW67 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSW67 Philips Semiconductors NPN switching transistors Original PDF
    BSW67 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=120 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF
    BSW67 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    BSW67 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BSW67 Mullard Quick Reference Guide 1977/78 Scan PDF
    BSW67 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSW67 Unknown Transistor Replacements Scan PDF
    BSW67 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSW67 Unknown Transistor Replacements Scan PDF
    BSW67 Unknown Transistor Replacements Scan PDF
    BSW67 Unknown Transistor Replacements Scan PDF
    BSW67 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSW67 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSW67 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSW67 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSW67 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BSW67 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BSW67 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSW67 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BSW67 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF

    BSW67 Datasheets Context Search

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    BSW67

    Abstract: No abstract text available
    Text: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BSW67 O205AD) 17-Jul-02 BSW67

    BSW67A

    Abstract: transistor 2a 20v 5w
    Text: BSW67A MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 120V • VCEO = 120V


    Original     		PDF BSW67A O-205AD) BSW67A transistor 2a 20v 5w

    Untitled

    Abstract: No abstract text available
    Text: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF BSW67A O205AD) 19-Jun-02

    data sheet BSW67A

    Abstract: BSW67A BP317 BSW66A BSW68A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors


    Original     		PDF M3D111 BSW66A; BSW67A; BSW68A MAM317 SCA54 117047/00/02/pp8 data sheet BSW67A BSW67A BP317 BSW66A BSW68A

    Untitled

    Abstract: No abstract text available
    Text: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BSW67 O205AD) 19-Jun-02

    BSW67

    Abstract: No abstract text available
    Text: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BSW67 O205AD) 1-Aug-02 BSW67

    Untitled

    Abstract: No abstract text available
    Text: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF BSW67A O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BSW67A MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 120V • VCEO = 120V


    Original     		PDF BSW67A O-205AD)

    BSW67A

    Abstract: No abstract text available
    Text: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF BSW67A O205AD) 1-Aug-02 BSW67A

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    2N5415

    Abstract: No abstract text available
    Text: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421


    OCR Scan     		PDF 00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415

    Untitled

    Abstract: No abstract text available
    Text: 7421237 0 G 2 Ô 4 CÎ7 b • 'T '3 } > - 0 3 SGS-THOMSON iLdtmnfMOûS S G S- TH OM SON BSW67 BSW68 3QE D HIGH VOLTAGE SWITCH DESCRIPTIO N The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load


    OCR Scan     		PDF BSW67 BSW68 BSW67-BSW68

    BSW68A 1990

    Abstract: bsw68a
    Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


    OCR Scan     		PDF BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a

    BY206

    Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
    Text: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A


    OCR Scan     		PDF BSW66A BSW67A BSW68A 500mA BAV10 BY206 7Z776S1 77655 BSW68A 68A diode BY206 diode 82S2 Silicon Epitaxial Planar Transistor philips k 68a

    bsw68

    Abstract: bsw67
    Text: SGS-THOMSON EüJÛÏÏIMOigS BSW67 BSW68 HIGH VOLTAGE SWITCH DESCRIPTION The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching applications. ABSO LU TE M AXIM UM RATINGS


    OCR Scan     		PDF BSW67 BSW68 67-BSW BSW67-BSW68 bsw68

    BSW68A

    Abstract: BSW67A BSW66A
    Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


    OCR Scan     		PDF BSW66A; BSW67A; BSW68A MAM317 BSW66A BSW67A BSW68A BSW67A BSW66A

    BSW68

    Abstract: BSW67 transistor bsw 67
    Text: BSW67 SILICON PLANAR NPN B S W 68 H I G H - V O L T A G E SWITCH The BSW 67 and BSW 68 are silicon planar epitaxial NF‘N transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching application. BSW 67 A B S O L U T E M A X IM U M R A T IN G S


    OCR Scan     		PDF BSW67 BSW67 BSW68 200il S20ns. BSW68 transistor bsw 67

    bsw68a

    Abstract: BSW67A MOTOROLA
    Text: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C


    OCR Scan     		PDF t-3b72S4 BSW67A BSW68A BSW68A BSW67A MOTOROLA

    BSW67

    Abstract: BSW68 LG 631 IC transistor bsw67
    Text: Data Sheet cen tral BSW67 BSW68 Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSW67, BSW68 types are Silicon NPN Epitaxial Planar Transistors designed


    OCR Scan     		PDF BSW67, BSW68 BSW67 BSW68 100mA 500mA BSW67 LG 631 IC transistor bsw67

    BY206

    Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
    Text: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter


    OCR Scan     		PDF BSW66A 711002b DD4237Ã BSW67A BSW68A 711Qa2b Q0M53B5 BY206 k 68a Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A

    BSW66A

    Abstract: bsw67a BSW63A bsw68a
    Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


    OCR Scan     		PDF BSW66A; BSW67A; BSW68A BSW66A BSW67A BSW68e BSW63A bsw68a

    tube az2

    Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
    Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)


    OCR Scan     		PDF BSS38 BSW41A T0-18 BSX19 BSX20 BSX21 BSY95A h--22-> crt6-25 tube az2 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34

    2N2369At

    Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		PDF MIL-19500 i2N5415* 2N3637# MM4001 2N3635 2N3634# 2N3495 2N5680 MM4000 MM5007 2N2369At 2N4237 High-Voltage Amplifiers 2N3546 2N4033 2N5679 MOTOROLA 2n5680 motorola 2N3114

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211