BSW68A Search Results

BSW68A

Contextual Info: BSW68A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

BSW68A

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSW68A NPN switching transistor FEATURES • High current (max. 1 A) PINNING • High voltage (max. 150V). APPLICATIONS PIN » General purpose switching and amplification

BSW68A

Abstract: BSW68A semelab
Contextual Info: BSW68A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

BY206

Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
Contextual Info: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A

data sheet BSW67A

Abstract: BSW67A BP317 BSW66A BSW68A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors

BSW68A

Abstract: BSW67A BSW66A
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification

bsw68a

Abstract: BSW67A MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C

BY206

Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
Contextual Info: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter

Contextual Info: BSW68A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)

BSW66A

Abstract: bsw67a BSW63A bsw68a
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification

BUS11A

Contextual Info: •-M 37E D S E M E L A B LTD i • 111 o > _ •c @ BS/CECC Polarity Package VCEO cont hpE BSW68 BSW68A BSX36—I' BSX62 BSX63 50004-040 50004-040 fclA» 50004-025 50004-025 NPN NPN PNP NPN NPN T039 T039 T018 T039 T039 150 150 40 40 60 2 2 0.5 3 3 30 min

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC114 transistor

Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MM4003

Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP

2N5416 MOTOROLA

Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.