BUK427 Search Results

BUK427-600B

Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

BUK427-400A

Abstract: BUK427-400B UNC20
Contextual Info: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BUK427-600B

Abstract: BUK427-600A sot199 G0205
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • 1^53=131 O G E O S Û O □ ■ PowerMOS transistor BUK427-600A BUK427-600B T - 3 7 - I I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

Contextual Info: 7 = 5 ? Philips Components D ata sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor SbE D P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

BUK427-600B

Contextual Info: 7 ^ 3 9 - / / Philips Com ponents Data sheet status P r o d u c t s p e c ific a tio n date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic füll pack envelope.

BUK427-500B

Contextual Info: N AMER PHILIPS/DISCRETE 25E D bbSBTEl 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B T - 39-11 GENERAL DESCRIPTION SYMBOL ccn > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BUK427-500B

Abstract: BUK427-500A
Contextual Info: SSE N AMER P H I L I P S / D I S C R E T E D ^ 53=131 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B y - 3 e? - 11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

Contextual Info: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BUK427-400A

Abstract: 100-P BUK427-400B lD25-c RI LGR
Contextual Info: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

k427 transistor

Abstract: k427 k427 diode BUK427-500B
Contextual Info: 7=3 Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor m 711Q6Hb DQM4145 12G PHILIPS INTERNATIONAL SbE GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

BUK427-450B

Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • fabS3131 0 0 2 0 2 7 0 PowerMOS transistor ô ■ BUK427-450B -r-3 9 -ti GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BUK427-450B

Contextual Info: N A M ER PHILIPS/DISCRETE ESE D • fabS3131 0020270 PowerMOS transistor ô ■ BUK427-450B -r-39-ti GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BUK427-500A

Abstract: BUK427-500B
Contextual Info: N AMER PHILIPS/DISCRETE E35E D ^53=131 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B Y - 3*7 - J i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies

TRANSISTOR P3

Abstract: BUK427-400B philips kt
Contextual Info: Philips Components D ata sheet status Product specification date of issue March 1991 PowerMOS transistor SbE PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channe! enhancem ent mode field-effect pow er transistor in a plastic full pack envelope. The device is intended fo r use in

BUK427-600A

Abstract: BUK427-600B EX-45
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • 1^53=131 O G E O S Ô O □ ■ P o w erM O S tra n s is to r - B U K 427-600A B U K 427-600B T - 3 7 - II QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

k427 transistor

Contextual Info: N ANER PHILIPS/DISCRETE ^ 5 3 7 3 1 0050260 0 2SE D PowerMOS transistor B U K 4 2 7-60 0 A B U K 427-600B G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

BUK427-400B

Contextual Info: Philips Components Data sheet status P roduct specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,