BUT11 TRANSISTOR Search Results

BUT-11

Abstract: BUT11 but11a
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS 7 0 -2 2 0 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage : BUT11 VcES Symbol V V Collector Emitter Voltage : BUT11A : BUT11 850 1000 V ceo 400 V

BUT-11

Abstract: BUT11 BUT11A transistor VCE 1000V to220 but11 transistor NPN Transistor VCEO 1000V
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Rating Collector Emitter Voltage : BUT11 : BUT11A Collector Emitter Voltage : BUT11 : BUT11A Emitter Base Voltage

BUT11A CIRCUIT

Abstract: BUT11
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11

d 42030 transistor

Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

BUT-11

Abstract: BUT11A CIRCUIT BUT11 BUT11/11A BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

BUT11A1

Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

BUT11

Abstract: 250VLC NPN Transistor VCEO 1000V
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BUT11 : B U T 11A Collector Emitter Voltage : BUT11 : B U T 11A Emitter B ase Voltage Collector Current DC

BUT11

Abstract: BUT-11
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

BUT11 equivalent

Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
Contextual Info: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec

BUT11

Abstract: transistor but11
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

BUT-11

Abstract: BUT11A BUT11 BUT11 equivalent BUT11A CIRCUIT BUT11A Switching regulators
Contextual Info: SavantIC Semiconductor Product Specification BUT11 BUT11A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION

but11a

Abstract: but 11 BUT-11 transistor but 11a BUT11
Contextual Info: Product specification Philips Semiconductors BUT11; BUT11A Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters • Switching regulators

but11 transistor application notes

Abstract: BUT11 BUT11A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT11A CIRCUIT

Abstract: But11a data but11a BUT-11 BUT11
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators

BUT11A

Abstract: BUT11 But11a data MGB913 MGE252 BUT-11
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT11F1

Abstract: 5T35 BUT11 UT11 BUT-11 Equivalent but11
Contextual Info: WM SGS-THOMSON 7# B UT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH jESCRIPTION ne BUT11/A and BUT11FI/AF! are silicon miitiepiaxial mesa NPN transistors respectively in Jedec 0-220 plastic package and 1SOWATT220 fully isosted package, particularly intended for switching

BUT11A1

Abstract: BUT11A BUT11 0077B BUT-11 But11a data
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

by205

Abstract: BUT11 BY205-400 2N2222 2N2904 D44H11 D45H11 transistor d44h11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO-220 PACKAGE TOP VIEW

by205

Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA

BUT11

Abstract: BUT11/BUT11APX equivalent but11 equivalent BUT-11 BUt11a
Contextual Info: SGS-THOMSON RfflDOI^OlilLiOTr^ORaDOi BUT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH DESCRIPTIO N The BUT 11 /A and BUT 11FI/AFI are silicon miltiepitaxiai mesa NPN transistors respectively in Jedec T0-220 plastic package and ISOWATT220 fully iso­ lated package, particularly intended for switching

BUT13P

Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
Contextual Info: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.

BY205

Abstract: BY205-400 BUT11 2N2222 2N2904 D44H11 D45H11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA

but11

Abstract: BUT-11 BUT11A NPN Transistor VCEO 1000V transistor VCE 1000V to220 BUT11 equivalent BUT11 transistor BUT11/11A transistor VCEO 1000V transistor VCE 1000V
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 850 V 1000 V 400 V 450 V VEBO 9 V Collector Current DC IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC)