BUT12 TRANSISTOR Search Results

BUT12

Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BUT12 Rating Unit 850 V 1000 V 400 V VCES : B UT12A Collector Emitter Voltage : BUT12 VcEO : B UT12A 450 V

BUT12A

Abstract: BUT12
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

pt 4115 led driver

Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A

BUT12A

Abstract: BUT12 PC100-W
Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A

BUT12

Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

BUT12

Abstract: BUT12A
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

but12 transistor

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol BUT12 BUT12A Rating Unit 850 V 1000 V 400 450 8 V V 20 4 A A 100 150 W VcES Collector Emitter Voltage BUT12 BUT12A

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)

BUT12A

Abstract: BUT12
Contextual Info: SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION

PC based dc motor speed control

Abstract: BUT12 transistor but12
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

BUT12

Abstract: BUT12A BUT12AF BUT12F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT12

Abstract: BUT12AF BUT12A BUT12F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT12A

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a T0-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators

TRANSISTOR but12

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. F o i APPLICATIONS • Converters • Inverters • Switching regulators

NPN Transistor TO220 vcc 150V

Abstract: BUT12 transistor IC 12A
Contextual Info: SILICON DIFFUSED POWER TRANSISTOR BUT12 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER

BUT12

Abstract: BUT12A
Contextual Info: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 PHILIPS Philips S em ico n d u cto rs Printed from www.freetradezone.com, a service of Partminer,

BUT12

Abstract: 125OC BUT12A T0220AB
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A High-voltage, high-speed, glass-passivated npn pow er transistors in a T 0 2 2 0 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r control systems, etc.

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T3i o o E a m a b*1E J> td3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO220 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.

L25-M

Abstract: l25m BUT 1 BUT12
Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse

BU2506DF

Abstract: 1500v 02xs t199 5A 800V BU508
Contextual Info: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A

BUT12

Abstract: BUT12A BUT12A/B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • [^53=131 G02fl41ñ TG3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a T 0 2 2 0 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems, etc.

BUT12A

Abstract: BUT12 MGE246
Contextual Info: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips S em ico n d u cto rs I C m i n e r . c o m E l e c t r o n i c - L i b r a r y S e r v i c e C o p y R i g h t 2003

BUT11AX

Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
Contextual Info: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS High-voltage and switching NPN power transistors HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS type number package 42 18 40 50 BUX86P BUX84F BUX84 BUW84 SOT82 SOT 186 TO-220AB SOT82 20 32