BV 1 150 Search Results

1N914B

Contextual Info: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA).

Contextual Info: S o c k e ts , in s u la te d , lo c k in g , 2 5 0 , 4 0 0 a n d 1 0 0 0 A m p s Sockets IB.BV with bayonet locking IB.BV IB.BV are insulated sockets with bayonet locking. IB.BV sockets are suitable for connection to conductors with cable lug, for screwing onto bus bars

2N2228

Abstract: 2N2227
Contextual Info: POWER DARLINGTONS TYPE NO. PT M AXIMUM RATINGS @ le 25°C BV cbo BV ceo BV ebo V V V A Watts MIN MAX B 1 le V« A V Sat Voltages VCE V be V V h« Test Conditions le Is ItBO A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10

transistor A25 SMD

Abstract: rl 254 diode
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)

BFR39

Abstract: bfr40 BFR80 BFR81 BFR79 BFR41 NPN pnp MATCHED PAIRS BFR61 Bfr60 transistor BFR40
Contextual Info: Silect General P u rp ose T ra n sisto rs — Ic up to 800 m A C a se O u tlin e s Polarity PTOT Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) T IS90 (1) TIS91 (1) Maximum ratings BV BV C BO V CEO V Cont IC A

Contextual Info: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

Contextual Info: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology

BA219

Abstract: FDH444 15921 1N628 DO-35 1S920 1N842 1N3070 1N629 1N643
Contextual Info: FAIRCHILD DIODES D IO D ES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE DEVICE NO. BV V Min nA Max 1 1N661 240 10000 200 1.0 6.0 2 FDH400 200 100 150 1.0 200 Item ir VF V Max vr @ V @ If mA C pF Max 20 «rr ns Max Package No. 300 DO-35 50

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

TO-202 transistor NPN

Abstract: ECG312 ECG311 ECG299 ECG312 transistor ecg32
Contextual Info: PHILIPS E C G INC 17E D Transistors cont'd EGG Type Description and Application • (=1=53=120 0005033 ê ■ (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV q b o BV c e o

Contextual Info: Advanced Power Electronics Corp. AP4816GSM-3 Asymmetric Dual N-channel Power MOSFET with Integrated Schottky Diode Simple Drive Requirement S1/D2 S1/D2 Ideal for DC-DC Converters CH-1 BV DSS 30V RDS ON 22mΩ ID BV DSS RDS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2

Contextual Info: SIEMENS IL1/2/5 PHOTOTRANSISTOR OPTOCOUPLER FEATURES * Current Transfer Ratio at lF = 10 mA IL 1 ,20% Min. IL 2 ,100% Min. IL 5 ,50% Min. * High Collector-Em itter Voltage IL1 - BV ceo = 50 V IL2, IL5 - BV ceo = 70 V Package Dimensions in Inches mm J ÎL J ÎL J ÎL

2N2828

Abstract: 2N2383 2N1886 2n1250
Contextual Info: POWER TRANSISTORS PT TYPE NO. M AXIM UM RATINCS BV cbo B V ceo BV ebo lc V V V A Watts hft @ 25°C MIN MAX 65> lc VCE A V Sat Voltages Vci Vet V V Test Conditions Ib lc A A It 80 ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1

TN25A

Contextual Info: T N 25 A Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV qSS ! ^DS O N ^ G S (th ) ' d <ON) BV dgs (max) (m ax) (min) TO-243AA* 60V 1 .5 0 1.6V 3.0A — TN2506ND 100V 1.5 0 1.6V

c3112

Contextual Info: Bipolar transistors-US/European series Product summary NPN transistors, SST3 and SMT3 Table 1 General purpose small signal amplifiers SMT3 SST3 C0b f T hFE I C * V CE V ce &V be ® lc sat (sat) max min BV cbo BV ceo BVeb0 •C B0® V CB Part no. m in

2N4124 rohm

Contextual Info: ROHM CO LTD MDE D El TflSflTTT 00032?*} 5 E3RHM . V> . — , g M fa -tn 7~-3S?-01 General Purpose Amplifiers and Switches Type PN2219 PN2219A Package BV cbo Min. Fi0-1 TO -92 (EBC) TO -92 (EBC) 60V 75V BVceo Min. 30V 40V BV ebo Min. 5V 6V hFE m £ V“

3N123

Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B
Contextual Info: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V

SSM4816SM

Contextual Info: SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple drive requirement MOSFET-1 BV DSS S1/D2 S1/D2 Suitable for DC-DC Converters R DS ON 22mΩ ID MOSFET-2 BV DSS R DS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2 D1 Fast switching performance SO-8 G2 S2/A S2/A

BA216

Abstract: BA164 1S44 BA217 1N457JAN 1N458JAN 1N459JAN 1N461A BA130 BA218
Contextual Info: FAIRCHILD DIODES DIODES GENERAL PURPOSE DIODES BY DESCENDING BV (Cont’d) GLASS PACKAGE Item DEVICE NO. BV V Min *R nA Max @ vF Vr V V Max If mA @ c trr PF ns Max Max Package No. 1 BA218 50 50 25 1.0 10 5.0 — ' DO-35 2 1S44 50 50 10 1.15 10 6.0 — DO-35

FLLD261

Contextual Info: FLLD261 3 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V MIN @ IR = 5 uA PACKAGE TO-236AB (Low) P8A ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 -55 to +150 Degrees C

FLLD261

Abstract: FS PKG CODE 49
Contextual Info: FLLD261 3 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD . . . .350 mW @ TA = 25 Deg C BV . . . .200 V MIN @ IR = 5 uA PACKAGE TO-236AB (Low) P8A ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 -55 to +150 Degrees C

KPS2832

Contextual Info: PRODUCT SPECIFICATION DATE: 01/18/2007 cosmo Photocoupler ELECTRONICS CORPORATION NO. 61P25004 : KPS2832 REV. SHEET 1 OF 6 1 High Isolation Voltage High Collector To Emitter Voltage SSOP Photocoupler • Features 1. High isolation voltage BV =3750 Vrms