ECG32 Search Results

Contextual Info: ECG326 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)60 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)7.5

ECG342

Abstract: ECG333 PACKAGE ECG340 ECG348 ECG328 NPN RF Transistor ECG327 ECG332 T42A ECG323
Contextual Info: Transistors cont'd ECG Type ECG324 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts SVcBO b v Ce o Base to Emitter Volts b v EBO Max. Collector Current Iq Amps NPN-Si, AF Pwr Amp

Contextual Info: ECG321 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V)1.6k I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ECG324 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: ECG320 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)36â V(BR)CBO (V)36 I(C) Max. (A)6 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.5 h(FE) Max. Current gain.

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

ECG3201

Abstract: ECG3202 ecg320 ECG3200
Contextual Info: L E D C artridge Indicator • • • • Integrated circuit com patibility So lid state reliability Im m une to sh o c k and vibration Polarized; terminal base is keyed The ECG32XX series can be used as direct replacements for ex­ isting incandescent lamp cartridges operating from a D C power

Contextual Info: ECG329 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)1 Absolute Max. Power Diss. (W)5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: ECG323 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

ECG348

Abstract: RF-38S ECG331 ECG333 ECG327 ECG328 ECG332MCP ECG323 ECG324 ecg32
Contextual Info: Transistors cont'd ECG Type ECG324 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BVCBo Collector To Emitter Volts bv Ceo Base to Emitter Volts B V Eb o Max. Collector Current Iq A m p s NPN-Si, AF Pwr Amp

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

Contextual Info: ECG327 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)180 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: ECG322 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

Contextual Info: ECG320F Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)6 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.5 h(FE) Max. Current gain.

jrc386d

Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Contextual Info: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42

Contextual Info: ECG328 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)130 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)140 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

# Frequency at which common emitter current gain is 70.0 of low frequency gain 1-47

Abstract: ECG338 ecg333 ecg32
Contextual Info: PHILIPS E C G INC 17E D Transistors cont'd ECO Type ECG321 Description and Application NPN-Si, Horiz Defl • ^53=128 0002634 T M 'T '-'V b - 1 3 (Maximum Ratings at Tc=25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to

Contextual Info: LED Cartridge Indicator • • • • Integrated circuit compatibility Solid state reliability Immune to shock and vibration Polarized; terminal base is keyed The ECG32XX series can be used as direct replacements for ex­ isting incandescent lamp cartridges operating from a DC power

Contextual Info: ECG325 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: ECG32 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

transistor af 126

Abstract: ECG291 ECG317 ECG290A T16 TRANSISTOR ecg316 ECG289A ECG31 transistor t20 ECG312
Contextual Info: P H I L I P S E C G INC SME J> Transistors cont'd ECG Type • bbS3=12fl G D D 7 1 5 4 TSE m £ C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Description and Application PNP-Si, AF Pwr Amp (Compì to ECG289A)

photo transistor til 78

Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for