BVD55 Search Results

IRL540A

Contextual Info: IRL540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H BVdss = 100 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS = 100V

ZVP4424A

Abstract: BVD55
Contextual Info: I P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE2 ZVP4424A [ 1 -SEPTEMBER94 FEATURES ‘ 240 Vott VD$ *R ‘ DS onl=9Q Lowthreshold APPLICATIONS * Electronic Hook Switch ABSOLUTE MAXIMUM w RAllNGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT v 0s

irf 560

Contextual Info: IRLW/IZ24A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ VDS = 60V

SSF7N80A

Contextual Info: SSF7N80A A d van ced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS = 800V

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

irlm110

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES b v dss = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 1.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ VDS = 100V