BZ10 Search Results

BZ148

Abstract: BZ1000 BZ1410 BZ1205 BZ1121 BZ147 BZ1300 BZ115 BZ-1303 bz1304
Contextual Info: &RQWDFW ODEHOV  2YHUYLHZ 2UGHU 1R BZ1000 BZ1002 BZ1005 BZ1006 BZ1007 BZ1017 BZ1100 BZ1101 BZ1102 BZ1103 BZ1104 BZ1105 BZ1106 BZ1107 BZ1108 BZ1109 BZ1110 BZ1111 BZ1112 BZ1113 BZ1114 BZ1115 BZ1116 BZ1120 BZ1121 BZ1122 BZ1123 BZ1124 BZ1125 BZ1126 BZ1127 BZ1128

BZ102 diode

Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.

BZ148

Abstract: BZ1000 BZ1151 BZ147 BZ1200 bz1304 BZ1121 BZ-1100 BZ111 BZ1149
Contextual Info: .RQWDNWVFKLOGHU  hEHUVLFKW %HVWHOOQU BZ1000 BZ1002 BZ1005 BZ1006 BZ1007 BZ1017 BZ1100 BZ1101 BZ1102 BZ1103 BZ1104 BZ1105 BZ1106 BZ1107 BZ1108 BZ1109 BZ1110 BZ1111 BZ1112 BZ1113 BZ1114 BZ1115 BZ1116 BZ1120 BZ1121 BZ1122 BZ1123 BZ1124 BZ1125 BZ1126 BZ1127

BZX75C2V1

Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
Contextual Info: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

Contextual Info: CYDM064B16 CYDM128B16 CYDM256B16 1.8 V 4 K/8 K/16 K x 16 MoBL Dual-Port Static RAM 1.8V 4K/8K/16K x 16 MoBL® Dual-Port Static RAM Features • True dual ported memory cells that allow simultaneous access of the same memory location ■ Expandable data bus to 32-bits with Master or Slave chip select

SEM 2006

Abstract: A12L CYDM064B16 CYDM128B16 CYDM256B16
Contextual Info: CYDM256B16 CYDM128B16 CYDM064B16 1.8V 4K/8K/16K x 16 MoBL Dual-Port Static RAM Features • Full asynchronous operation • True dual-ported memory cells that allow simultaneous access of the same memory location • Automatic power-down • Pin select for Master or Slave

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

free sem 2107

Abstract: sem 2107 BZ108 HDV24VL HDV24VL55BZI Shared resource arbitration
Contextual Info: HDV24VL ADP II o 2.8 Volt x16 Very Low Power Dual-Port Static RAM Memory Device 4K x 16 HDV24VL Key Features: • • • • • • • • Very low power true Dual-Port Static RAM with high speed access Simultaneous memory access through two ports LVTTL compatible; 2.8V power supply

Contextual Info: CYDM256A16, CYDM128A16, CYDM064A16, CYDM128A08, CYDM064A08 1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM Features • Full asynchronous operation • Automatic power-down • True dual-ported memory cells which allow simultaneous access of the same memory location

Contextual Info: CYDM256B16 CYDM128B16 CYDM064B16 1.8V 4K/8K/16K x 16 MoBL Dual-Port Static RAM Features • Full asynchronous operation • True dual-ported memory cells that allow simultaneous access of the same memory location • Automatic power-down • Pin select for Master or Slave

CYWB0124AB-FDXI

Abstract: CE-ATA version 1.1 crystal 26 Mhz MultiMediaCard System Specification Version MMCA CYWB0125AB-BVXI AN48864 AN4886
Contextual Info: CYWB0124AB, CYWB0125AB West Bridge Antioch USB/Mass Storage Peripheral Controller Features Applications • ■ Cellular phones ■ Portable media players ■ Personal digital assistants ■ Digital cameras ■ Portable video recorder SLIM™ architecture, enabling simultaneous and independent

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/片 K/4 K x 16 M找BL A当M RAM • A当M核 ❐ 止RAM ❐ ■ 存归归 = 版0 ns 15 mA ❐ 存归归 = 65 ns 25 mA ❐ 存止B3 = 2 A ❐ ■ ■ 16 K/片 K/4 K x 16 ■

CE-ATA version 1.1

Abstract: CYWB0124AB CYWB0224ABM CYWB0224ABM-BVXI CYWB0224ABS CYWB0224ABS-BVXI usb flash drive circuit diagram nand controller SD2P
Contextual Info: ADVANCE INFORMATION CYWB0224ABS/CYWB0224ABM TM TM West Bridge Features • ■ N-Xpress NAND Controller Technology ❐ Interleave up to 16 NANDs with 8 Chip Enables CE# for x8 or x16 SLC (CYWB0224ABS) or MLC (CYWB0224ABM) NAND flash devices. ❐ 4-bit Error Correction Coding

TSXCUSB485

Abstract: allen bradley IEC 60947-5-1 xbtz9780 xbtz9980 modicon tsx NANO XBTGT TSX NANO CABLE xbt n200 xbtz925 Communication cables pin diagram XVMB1RAGS
Contextual Info: Operator dialog 1 Harmony Optimise the creation of your dialogue solutions! 2 Unequalled and of high quality, it is the largest offer on the market. 3 p Simplicity: the clip together components ensure simple and secure assembly. p Ingenuity: LED technology for all

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

TC511665

Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

dg1u

Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
Contextual Info: Control and signalling units Ø 22 mm fixing Type XB2-B, with chromium plated metal bezel Characteristics Environment Conforming to standards EN 947-5-1 Ambient air temperature Operation : - 25…+ 70 °C Degree of protection IP 65 : Double-headed pushbuttons : IP 40 (IP 65 with sealing boot ZB2-BW008)

mmc application 8051

Abstract: 8051 SD MEMORY
Contextual Info: ADVANCE INFORMATION CYWB012X Family West Bridge Antioch West Bridge® Antioch™ Features • ■ ■ SLIM® architecture, allowing simultaneous and independent data paths between processor and USB, and between USB and mass storage High speed USB at 480 Mbps

HM534251BJ-6

Abstract: HM534251B
Contextual Info: HM534251B Series 262144-word x 4-bit Multiport CMOS Video RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM534251B is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4 -bit SAM serial access m em ory . Its RAM and SAM operate independently and

Contextual Info: TOSZ 100110 www.vishay.com Vishay Draloric RF Power Barrel Capacitors, for Dielectric Heating Equipment FEATURES These capacitors feature a Q-factor of greater than 10 000 which makes them ideal in operating frequency range from 0.1 MHz up to 30 MHz where high voltages and currents are

A12L

Abstract: CYDM064B16 CYDM128B16 CYDM256B16
Contextual Info: CYDM256B16 CYDM128B16 CYDM064B16 1.8V 4K/8K/16K x 16 MoBL Dual-Port Static RAM Features • Full asynchronous operation • True dual-ported memory cells that allow simultaneous access of the same memory location • Automatic power-down • Pin select for Master or Slave

CYWB0124AB

Abstract: NAND FLASH BGA AD14 CYWB0226ABS-BVXI memory interface 8051 CE-ATA version 1.1
Contextual Info: ADVANCE CYWB02XX Family West Bridge Astoria Features • ■ N-Xpress NAND Controller Technology ■ ■ ■ Pseudo CRAM interface Antioch Interface ❐ Pseudo NAND Flash interface ❐ SPI (slave mode) interface ❐ DMA slave support ❐ Interleave up to 16 NANDs with 8 Chip Enables (CE#) for